Photonic bandgap structure

1. A photonic bandgap structure, comprising:

a first layer of Gallium Phosphide (GaP);

a layer of Gallium Arsenide (GaAs);

a first conductive layer located between said first layer of Gallium Phosphide and said layer of Gallium Arsenide, with the distance from a top surface of said first layer of Gallium Phosphide to a bottom surface of said layer of Gallium Arsenide being less than 200 nanometers;

a second conductive layer;

a second layer of Gallium Phosphide, with said second layer of Gallium Phosphide lying between said first conductive layer and said second conductive layer, said first conductive layer being in direct contact with said first layer of Gallium Phosphide;

a third conductive layer and a fourth conductive layer;

a third layer made of Gallium Phosphide with said third layer of Gallium Phosphide lying between said second conductive layer and said third conductive layer and said layer of Gallium Arsenide lying between said third conductive layer and said fourth conductive layer;

a fifth conductive layer;

a first layer of Germanium, with said first layer of Germanium lying between said fourth conductive layer and said fifth conductive layer;

a second layer of Germanium located below and connecting to said fifth conductive layer; said fifth conductive layer being located below and connecting to said first layer of Germanium; said first layer of Germanium being located below and connecting to said fourth conductive layer; said fourth conductive layer being located below and directly connecting to said layer of Gallium Arsenide; said third conductive layer being located below and connecting to said third layer of Gallium Phosphide; said third layer of Gallium Phosphide being located below and connecting to said second conductive layer; said second conductive layer being located below and directly connecting to said second layer of Gallium Phosphide; said second layer of Gallium Phosphide being located below and connecting to said first conductive layer, and said first conductive layer directly connecting to said first layer of Gallium Phosphide; and wherein:

said first, said second, said third, said fourth, and said fifth conductive layers have real dielectric constants which are less than zero; and

a total thickness from a top surface to a bottom surface of said photonic bandgap structure is less than one micron.

2. A photonic bandgap structure according to claim 1 , wherein:

from a bottom surface of said second layer of Germanium to said top surface of said first layer of Gallium Phosphide is a distance less than 520 nanometers; and

said first, said second, said third, said fourth and said fifth conductive layers are approximately 15 nanometers thick.

3. A photonic bandgap structure according to claim 1 , further comprising:

a first buffer layer, a second buffer layer, a third buffer layer and a fourth buffer layer;

said first buffer layer making direct contact with said first conductive layer and making direct contact with said second layer of Gallium Phosphide;

said second buffer layer making direct contact with said second conductive layer and making direct contact with said third layer of Gallium Phosphide;

said third buffer layer making direct contact with said third conductive layer and making direct contact with said layer of Gallium Arsenide; and

said fourth buffer layer making direct contact with said fourth conductive layer and making direct contact with said first layer of Germanium.

4. A photonic bandgap structure, comprising:

a first layer of Gallium Phosphide (GaP);

a first layer of Gallium Arsenide (GaAs);

a first conductive layer located between said first layer of Gallium Phosphide and said first layer of Gallium Arsenide, with the distance from a top surface of said first layer of Gallium Phosphide to a bottom surface of said first layer of Gallium Arsenide being less than 200 nanometers;

a second conductive layer;

a second layer of Gallium Phosphide, with said second layer of Gallium Phosphide lying between said first conductive layer and said second conductive layer, said first conductive layer being in direct contact with said first layer of Gallium Phosphide;

a third conductive layer and a fourth conductive layer;

a third layer of Gallium Phosphide with said third layer of Gallium Phosphide lying between said second conductive layer and said third conductive layer and said first layer of Gallium Arsenide lying between said third conductive layer and said fourth conductive layer;

a second layer of Gallium Arsenide directly connecting to said fourth conductive layer;

a fifth conductive layer directly connected to said second layer of Gallium Arsenide;

a third layer of Gallium Arsenide directly connected to said fifth conductive layer;

a fourth layer of Gallium Arsenide;

a sixth conductive layer directly connected to said fourth layer of Gallium Arsenide;

a seventh conductive layer directly connected to said fourth layer of Gallium Arsenide;

a fifth layer of Gallium Arsenide directly connected to said seventh conductive layer, with the distance from a bottom surface of said fifth layer of Gallium Arsenide to said top surface of said first layer of Gallium Phosphide being less than one micron; and wherein:

said first, said second, said third, said fourth, said fifth, said sixth and said seventh conductive layers have real dielectric constants which are less than zero.

5. A photonic bandgap structure, according to claim 4 , wherein:

said first, said second, said third, said fourth, said fifth, said sixth and said seventh conductive layers are made of Silver.

6. A photonic bandgap structure having stacked layers, comprising:

a top surface and a bottom surface with a distance from said top surface to said bottom surface being less than one micron;

a plurality of layers of Gallium Phosphide (GaP) which include a first layer, a second layer and a third layer of Gallium Phosphide, said first layer of Gallium Phosphide having a top surface which is said top surface of the photonic bandgap structure;

a plurality of upper conductive layers with a first layer of said upper conductive layers being positioned between said first and said second layers of said plurality of layers of Gallium Phosphide, said third layer of Gallium Phosphide being positioned between a second layer and a third layer of said upper conductive layers;

a layer of Gallium Arsenide (GaAs) positioned below said third conductive layer of said plurality of upper conductive layers and being connected to said plurality of layers of Gallium Phosphide;

a first layer of Germanium (Ge) positioned below said layer of Gallium Arsenide;

a plurality of lower conductive layers with a first layer of said plurality of lower conductive layers being located between said layer of Gallium Arsenide and said first layer of Germanium;

a second layer of Germanium located below said first layer of Germanium;

a second layer of said plurality of lower conductive layers positioned between said first layer of Germanium and said second layer of Germanium, with said second layer of Germanium having a bottom surface which is said bottom surface of said photonic bandgap structure.

7. A photonic bandgap structure according to claim 6 , wherein:

said plurality of upper conductive layers and said plurality of lower conductive layers are made of gold.

8. A photonic bandgap structure according to claim 6 further comprising:

a first buffer layer, a second buffer layer, a third buffer layer and a fourth buffer layer; and wherein:

said first buffer layer makes direct contact with said second layer of Gallium Phosphide;

said second buffer layer makes direct contact with said third layer of Gallium Phosphide;

said third buffer layer makes direct contact with said layer of Gallium Arsenide; and

said fourth buffer layer makes direct contact with said first layer of Germanium.