Semiconductor substrate and method for manufacturing semiconductor substrate
A method for manufacturing a semiconductor substrate may comprise irradiating a surface of a first semiconductor layer and a surface of a second semiconductor layer with one or more types of first impurity in a vacuum. The method may comprise bonding the surface of the first semiconductor layer and the surface of the second semiconductor layer to each other in the vacuum. The method may comprise applying heat treatment to the semiconductor substrate produced in the bonding. The first impurity may be an inert impurity that does not generate carriers in the first and second semiconductor layers. The heat treatment may be applied such that a width of an in-depth concentration profile of the first impurity contained in the first and second semiconductor layers is narrower after execution of the heat treatment than before the execution of the heat treatment.
1. A method for manufacturing a semiconductor substrate including a first semiconductor layer and a second semiconductor layer that is in contact with the first semiconductor layer, comprising:
irradiating a surface of the first semiconductor layer with one or more types of first impurity in a vacuum and irradiating a surface of the second semiconductor layer with the one or more types of first impurity in the vacuum;
bonding the surface of the first semiconductor layer and the surface of the second semiconductor layer to each other in the vacuum in which the irradiating the surface of the first and second semiconductor layer was executed and thereby producing a semiconductor substrate having a bonded interface; and
applying heat treatment to the semiconductor substrate produced in the bonding,
wherein the first impurity is an inert impurity that does not generate carriers in the first and second semiconductor layers,
the heat treatment is applied such that a region in the vicinity of the bonded interface between the first semiconductor layer and the second semiconductor layer is recrystallized, and
a width of an in-depth concentration profile of the first impurity contained in the vicinity of the bonded interface is narrower after execution of the heat treatment than before the execution of the heat treatment.
2. The method according to claim 1 , wherein the heat treatment is applied such that a concentration variation of the first impurity in an in-plane direction in the vicinity of the bonded interface is greater after the execution of the heat treatment than before the execution of the heat treatment.
3. The method according to claim 1 , wherein a second impurity that generates carriers in the first and second semiconductor layers is present in a region in the first and second semiconductor layers in which the first impurity is present.
4. The method according to claim 3 , further comprising introducing the second impurity into at least either the surface of the first semiconductor layer or the surface of the second semiconductor layer,
wherein the introducing is executed before the bonding step.
5. The method according to claim 4 , wherein a thermal diffusion method is used for the introducing.
6. The method according to claim 3 , wherein the irradiating step includes further irradiating at least either the surface of the first semiconductor layer or the surface of the second semiconductor layer with the second impurity.
7. The method according to claim 6 , further comprising implanting the second impurity from a back surface side of the first semiconductor layer opposite to the bonded interface of the semiconductor substrate produced in the bonding step,
wherein in the implanting, at least part of the second impurity is implanted into the second semiconductor layer through the bonded interface.
8. The method according to claim 3 , wherein a range of presence of the first impurity in the first and second semiconductor layers is encompassed in a range of presence of the second impurity in the first and second semiconductor layers.
9. The method according to claim 1 , wherein the first and second semiconductor layers are semiconductor layers with uniform distribution of the second impurity that generates carriers in the first and second semiconductor layers.
10. The method according to claim 1 , wherein a combination of the first and second semiconductor layers is a combination of any two of single-crystalline 3C-SiC, single-crystalline 4H-SiC, single-crystalline 6H-SiC, and polycrystalline SiC.
11. The method according to claim 10 , wherein the heat treatment is applied at a maximum temperature of 1500° C. or higher in the heat treatment.
12. The method according to claim 1 , wherein the first impurity includes any of argon (Ar), neon (Ne), and xenon (Xe).
13. The method according to claim 3 , wherein the second impurity includes at least one of nitrogen (N) and phosphorus (P).
14. A semiconductor substrate comprising:
a first semiconductor layer; and
a second semiconductor layer that is in contact with the first semiconductor layer,
wherein the first and second semiconductor layers have a first impurity and a second impurity introduced thereinto, the first impurity being an inert impurity that does not generate carriers in the first and second semiconductor layers, and the second impurity that generates carriers in the first and second semiconductor layers,
a certain ratio or more of a total amount of the first impurity is present in a first impurity region with a certain value or less of depth from an interface between the first and second semiconductor layers,
a certain ratio or more of a total amount of the second impurity is present in a second impurity region with a certain value or less of depth from the interface between the first and second semiconductor layers,
the second impurity region is greater in depth than the first impurity region, and
90% or more of a total amount of the first impurity is present in the first impurity region within 2 nm from the interface between the first and second semiconductor layers.
15. The semiconductor substrate according to claim 14 , wherein a maximum first impurity concentration value is greater than twice the amount of a minimum first impurity concentration value in the interface between the first and second semiconductor layers.
16. The semiconductor substrate according to claim 15 , wherein
the first impurity coagulates in an in-plane direction, and
the difference between the maximum first impurity concentration value and the minimum first impurity concentration value is due to the coagulation of the first impurity.
17. The semiconductor substrate according to claim 14 , wherein the second impurity includes at least one of nitrogen (N) and phosphorus (P).
18. The semiconductor substrate according to claim 14 , wherein a combination of the first and second semiconductor layers is a combination of any two of single-crystalline 3C-SiC, single-crystalline 4H-SiC, single-crystalline 6H-SiC, and polycrystalline SiC.
19. The semiconductor substrate according to claim 14 , wherein the first impurity includes any of argon (Ar), neon (Ne), and xenon (Xe).