IP Library Granted Patent US 9,773,936
Granted Patent B2
US 9,773,936 · App. 14/942,831 · Granted Sep 26, 2017

Semiconductor device

Inventor: Hayato Nakano (Kofu, JP)
Assignee: FUJI ELECTRIC CO., LTD.
H01L31/12H01L25/167H01L29/1608H01L29/7827H01L31/14H01L31/153H01L31/173H01L33/0033H01L33/0041H01L33/32H01L33/34H01L2224/32225H01L2224/48091H01L2224/48227H01L2224/73265H01L2924/12032
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Quick Facts
Patent No.
US 9,773,936
App. No.
14/942,831
Granted
Sep 26, 2017
Kind
B2
Abstract

A semiconductor device is provided, which has a wide-bandgap semiconductor element, such as a SiC element, and which includes a sensor capable of responding sufficiently to characteristic requirements for protecting and controlling the semiconductor element. The semiconductor device includes a wide-bandgap semiconductor element mounted on a substrate; and a light-receiving element that receives light emitted from the wide-bandgap semiconductor element when the wide-bandgap semiconductor element is in a conduction state.

Claims (6)

1. A semiconductor device that is a power semiconductor module having a power semiconductor element and a protection circuit with a sensor for protecting and controlling the power semiconductor element, the semiconductor device comprising:

as said power semiconductor element, a wide-bandgap semiconductor element comprised of a wide-bandgap semiconductor that emits light in a conduction state; and

as said sensor, a light-receiving element that is disposed near a lateral surface of the wide-bandgap semiconductor element so as to receive light emitted from the wide-bandgap semiconductor element.

2. The semiconductor device according to claim 1 , wherein the light receiving element detects the intensity of the light emitted from the wide-bandgap semiconductor element to obtain a current value flowing through the wide-bandgap semiconductor element based on the intensity of the light.

3. The semiconductor device according to claim 2 , wherein the wide-bandgap semiconductor element includes a MOSFET or a Schottky barrier diode.

4. The semiconductor device according to claim 1 , wherein the wide-bandgap semiconductor element is formed of silicon carbide or gallium nitride.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 16, 2015
From: NAKANO, HAYATO
To: FUJI ELECTRIC CO., LTD.
Reel/Frame 037052/0477 →
Priority Claims (1)
JP 2013-117915 · Jun 4, 2013 · national
Continuity (2)
Continuation PCTJP2014061773 · Apr 25, 2014
Related Publication 20160071998A1 · Mar 10, 2016