Packaging optoelectronic components and CMOS circuitry using silicon-on-insulator substrates for photonics applications
Package structures and methods are provided to integrate optoelectronic and CMOS devices using SOI semiconductor substrates for photonics applications. For example, a package structure includes an integrated circuit (IC) chip, and an optoelectronics device and interposer mounted to the IC chip. The IC chip includes a SOI substrate having a buried oxide layer, an active silicon layer disposed adjacent to the buried oxide layer, and a BEOL structure formed over the active silicon layer. An optical waveguide structure is patterned from the active silicon layer of the IC chip. The optoelectronics device is mounted on the buried oxide layer in alignment with a portion of the optical waveguide structure to enable direct or adiabatic coupling between the optoelectronics device and the optical waveguide structure. The interposer is bonded to the BEOL structure, and includes at least one substrate having conductive vias and wiring to provide electrical connections to the BEOL structure.
1. A package structure, comprising:
a photonics package comprising:
a first integrated circuit chip comprising a silicon-on-insulator (SOI) substrate, wherein the SOI substrate comprises a buried oxide layer, an active silicon layer disposed adjacent to the buried oxide layer, and a BEOL (back-end-of-line) structure formed over the active silicon layer;
an integrated optical waveguide structure patterned from the active silicon layer of the first integrated circuit chip;
an optoelectronics device mounted on the buried oxide layer of the first integrated circuit chip in alignment with at least a portion of the integrated optical waveguide structure;
an interposer bonded to the BEOL structure of the first integrated circuit chip, the interposer comprising at least one substrate having a plurality of conductive through vias and wiring to provide electrical connections to the BEOL structure;
a second integrated circuit chip;
a package interposer, wherein the photonics package is mounted to a first side of the package interposer and wherein the second integrated circuit chip is mounted to a second side of the package interposer, opposite the first side of the package interposer, wherein the package interposer comprises electrical wiring and through vias to provide electrical connections between the photonics package and the second integrated circuit chip; and
an application board having an integrated recess formed in one side of the application board, wherein the package interposer is mounted to the application board with at least a portion of the photonics package disposed within the integrated recess of the application board;
wherein the application board comprises a plurality of thermal vias formed therein in alignment with the integrated recess, wherein photonics package is disposed within the integrated recess such that a backside of the optoelectronics device of the photonics package is in thermal contact with the plurality of thermal vias.
2. The package structure of claim 1 , wherein the integrated optical waveguide structure is adiabatically coupled to the optoelectronics device through the buried oxide layer.
3. The package structure of claim 1 , wherein the integrated optical waveguide structure comprises a vertical grating coupler to couple light between the optical waveguide structure and the optoelectronics device.
4. The package structure of claim 1 , wherein the optoelectronics device comprises at least one of a laser diode, a photodiode, a photonics device, and a combination thereof.
5. The package structure of claim 1 , further comprising one or more conductive vias formed through the buried oxide layer and into the BEOL structure to provide electrical connections between the optoelectronics device and active circuitry of the first integrated circuit chip.
6. The package structure of claim 1 , wherein the at least one substrate of the interposer is formed of a material comprising one of glass, high-resistivity silicon, and an insulator material.
7. The package structure of claim 1 , further comprising a capping layer formed on the buried oxide layer to prevent light from leaking out of the integrated optical waveguide structure through the buried oxide layer.
8. The package structure of claim 1 , wherein the first integrated circuit chip comprises at least one of optical receiver circuitry and optical transmitter circuitry formed as part of the active silicon layer.
9. The package structure of claim 1 , wherein the first integrated circuit chip of the photonics package comprises at least one of optical receiver circuitry and optical transmitter circuitry formed as part of the active silicon layer, wherein the optoelectronics device comprises at least one of a laser diode and a photodiode, and wherein the second integrated circuit chip comprises a microprocessor.
10. The package structure of claim 1 , wherein the application board comprises a hole formed through the application board, wherein the package structure further comprises a optical fiber device with an integrated lens aligned to one end of the hole, and wherein the integrated optical waveguide structure of the photonics package comprises a vertical grating coupler that is disposed in alignment with another end of the hole, wherein light is transmitted through the hole in the application board between the integrated lens and the vertical grating coupler.
11. A package structure, comprising:
a photonics package comprising:
a first integrated circuit chip comprising a silicon-on-insulator (SOI) substrate, wherein the SOI substrate comprises a buried oxide layer, an active silicon layer disposed adjacent to the buried oxide layer, and a BEOL (back-end-of-line) structure formed over the active silicon layer;
an integrated optical waveguide structure patterned from the active silicon layer of the first integrated circuit chip;
an optoelectronics device mounted on the buried oxide layer of the first integrated circuit chip in alignment with at least a portion of the integrated optical waveguide structure;
an interposer bonded to the BEOL structure of the first integrated circuit chip, the interposer comprising at least one substrate having a plurality of conductive through vias and wiring to provide electrical connections to the BEOL structure;
a second integrated circuit chip;
a package interposer having a hole formed through the package interposer; and
an application board;
wherein the second integrated circuit chip is flip-chip mounted to a first side of the package interposer;
wherein the photonics package is mounted to a front side of the second integrated circuit chip and disposed within the hole of the package interposer;
wherein a second side of the package interposer is mounted to a first side of the application board;
wherein the application board comprises a heat sink formed on the first side of the application board, and a plurality of thermal vias formed therein in alignment with heat sink;
wherein the photonics package is disposed within the hole of the package interposer such that a backside of the optoelectronics device of the photonics package is in thermal contact with the heat sink formed on the first side of the application board.
12. The package structure of claim 11 , wherein the first integrated circuit chip of the photonics package comprises at least one of optical receiver circuitry and optical transmitter circuitry formed as part of the active silicon layer, wherein the optoelectronics device comprises at least one of a laser diode, a photodiode, a photonics device, and a combination thereof, and wherein the second integrated circuit chip comprises a microprocessor.
13. The package structure of claim 11 , wherein the application board comprises a hole formed through the application board, wherein the package structure further comprises a optical fiber device with an integrated lens aligned to one end of the hole, and wherein the integrated optical waveguide structure of the photonics package comprises a vertical grating coupler that is disposed in alignment with another end of the hole, wherein light is transmitted through the hole in the application board between the integrated lens and the vertical grating coupler.
14. The package structure of claim 11 , wherein the integrated optical waveguide structure is adiabatically coupled to the optoelectronics device through the buried oxide layer.
15. The package structure of claim 11 , wherein the integrated optical waveguide structure comprises a vertical grating coupler to couple light between the optical waveguide structure and the optoelectronics device.
16. The package structure of claim 11 , wherein the optoelectronics device comprises at least one of a laser diode, a photodiode, a photonics device, and a combination thereof.
17. The package structure of claim 11 , further comprising one or more conductive vias formed through the buried oxide layer and into the BEOL structure to provide electrical connections between the optoelectronics device and active circuitry of the first integrated circuit chip.
18. The package structure of claim 11 , wherein the at least one substrate of the interposer is formed of a material comprising one of glass, high-resistivity silicon, and an insulator material.
19. The package structure of claim 11 , further comprising a capping layer formed on the buried oxide layer to prevent light from leaking out of the integrated optical waveguide structure through the buried oxide layer.
20. The package structure of claim 11 , wherein the first integrated circuit chip comprises at least one of optical receiver circuitry and optical transmitter circuitry formed as part of the active silicon layer.