IP Library Granted Patent US 9,804,273
Granted Patent B2
US 9,804,273 · App. 14/870,629 · Granted Oct 31, 2017

Combined n-type and p-type MOS-based radiation sensors for environmental compensations

Inventor: Sean M. Scott (West Lafayette, IN)
Assignee: PURDUE RESEARCH FOUNDATION
G01T1/026G01T7/00G01T7/005H01L27/1443H01L31/119H01L31/1804
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Quick Facts
Patent No.
US 9,804,273
App. No.
14/870,629
Granted
Oct 31, 2017
Kind
B2
Abstract

An apparatus is disclosed comprising a metal oxide semiconductor capacitor (MOSCAP) comprising one or more gate layers disposed over a contiguous radiation-sensitive insulating layer, wherein the contiguous radiation-sensitive insulating layer comprises one or more contacting dielectric layers. A method may be employed to measure a value of a radiation-induced capacitance response of a metal oxide semiconductor capacitor (MOSCAP) from multiple non-contacting gate layers disposed over a radiation-sensitive layer comprising of one or more contacting dielectric layers to thereby enhance a sensitivity and a resolution of a radiation response of the MOSCAP.

Claims (9)

1. A method comprising: measuring a first value of a capacitance response parameter of a first sensor comprising an n-type metal oxide semiconductor capacitor (MOSCAP), and

measuring a second value of the response parameter of a second sensor comprising a p-type MOSCAP, wherein the first sensor and the second sensor have a same response to a first stimuli, comprising an incident radiation dose, and a different response to a second stimuli, comprising a environmental parameter, thereby isolating an effect of the first stimuli and the second stimuli on the response parameter when both the first stimuli and the second stimuli are present

the first sensor comprises an n-type metal oxide semiconductor capacitor (MOSCAP) and the second sensor comprise a p-type MOSCAP.

2. The method of claim 1 , wherein a first capacitance parameter of then-type MOSCAP and a second capacitance parameter of the p-type MOSCAP shift in opposite directions in response to incident radiation dose.

3. The method of claim 2 , wherein the first capacitance parameter of the n-type MOSCAP and the second capacitance parameter of the p-type MOSCAP shift in a same direction in response to the environmental parameter.

4. The method of claim 3 , wherein the environmental parameter is temperature.

5. The method of claim 3 , wherein the environmental parameter is humidity.

6. The method of claim 3 , wherein the environmental parameter is electromagnetic interference (EMI).

7. The method of claim 1 , wherein the first value of the response parameter of the first sensor and the second value of the response parameter of the second sensor are displayed on visual display device to a user and/or saved to a non-transient storage medium.

Assignments (3)
RELEASE OF SECURITY INTEREST Recorded Nov 6, 2017
From: BMO HARRIS BANK N.A
To: LANDAUER, INC
Reel/Frame 044368/0295 →
SECURITY INTEREST Recorded Jul 14, 2017
From: LANDAUER, INC.
To: BMO HARRIS BANK N.A.
Reel/Frame 043010/0956 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 18, 2016
From: SCOTT, SEAN M.
To: PURDUE RESEARCH FOUNDATION
Reel/Frame 037766/0365 →
Continuity (2)
Provisional Application 62065087 · Oct 17, 2014
Related Publication 20160187495A1 · Jun 30, 2016