Extreme ultraviolet (EUV) pod having marks
The present invention relates to an EUV pod having marks, which comprises a mask pod and one or more mark disposed on the mask pod. One or more sensor of a processing machine is used for detecting the one or more mark. By including the one or more mark, the surface roughness of one or more region of the mask pod detectable by the one or more sensor can be altered. The one or more sensor emits light to the mask pod, which reflects the light to the one or more sensor. The one or more sensor receives the reflection light from the mask pod and judges if the voltage generated by the reflection light falls within the reflection ranges of the mark. Thereby, whether the one or more sensor corresponds to the one or more make can be confirmed.
1. An extreme ultraviolet pod having marks, comprising:
a mask pod; and
one or more mark, disposed on said mask pod;
where said mask pod is configured to be loaded to a processing machine, and one or more sensor of said processing machine is configured to detect said one or more mark; said one or more mark is formed on said mask pod by laser engraving and includes surface roughness, and the surface roughness of said one or more mark ranges between 0 micrometer and 2.00 micrometers; said one or more sensor of said processing machine generates light to illuminate said one or more mark; said one or more mark reflects said light; and the voltage value generated by said reflection light from said one or more mark is produced according to the surface roughness of said one or more mark.
2. The extreme ultraviolet pod having mark of claim 1 , wherein said one or more mark is disposed on one or more region of said mask pod corresponding to one or more sensor of said processing machine.
3. The extreme ultraviolet pod having mark of claim 1 , wherein the voltage values generated by the reflection light from said one or more mark range from 4.80 volts and 5.20 volts.
4. The extreme ultraviolet pod having mark of claim 1 , wherein the 3-sigma standard deviation of the voltage values generated by the reflection light from said one or more mark is controlled within 0.1.