Semiconductor device and electronic device
According to one embodiment, a semiconductor device includes a first substrate, a second substrate, a first electronic component, a heat-conducting layer, a covering portion, and a heat-transporting portion. The first substrate has a first face and the second substrate has a second face and a third face. The first electronic component has a fourth face and a fifth face. The heat-conducting layer covers the third face and the fifth face. The covering portion covers at least the heat-conducting layer. The heat-transporting portion thermally connects the heat-conducting layer and the first substrate, and is located outside the second substrate and outside the covering portion.
1. A semiconductor device comprising:
a first substrate having a first face;
a second substrate disposed on the first face, the second substrate having a second face that faces the first face and a third face that is opposite to the second face;
a first electronic component disposed on the third face, the first electronic component having a fourth face that faces the third face and a fifth face that is opposite to the fourth face;
a heat-conducting layer covering the third face and the fifth face;
a covering portion on top of the heat-conducting layer, which is on the second substrate, the covering portion covering at least the heat-conducting layer; and
a heat-transporting portion thermally connecting the heat-conducting layer and the first substrate, the heat-transporting portion being located outside the second substrate and outside the covering portion.
2. The semiconductor device according to claim 1 , wherein a second electronic component is disposed on the first face of the first substrate, and
the second substrate includes a first side facing the second electronic component and a second side different from the first side and the heat-transporting portion is disposed on the second side.
3. The semiconductor device according to claim 1 , wherein the heat-conducting layer and the first substrate are thermally connected to each other by a plurality of the heat-transporting portions.
4. The semiconductor device according to claim 3 , wherein the heat-transporting portions are arranged to be denser in the central portion of the side of the second substrate than in the end parts of the side thereof.
5. The semiconductor device according to claim 1 , wherein an opening is formed in the heat-transporting portion.
6. The semiconductor device according to claim 1 , wherein the covering portion includes a heat-dissipating portion on a surface of the covering portion, the heat-dissipating portion being thermally connected to the heat-conducting layer.
7. The semiconductor device according to claim 1 , further comprising a connecting portion disposed in a state in which the connecting portion is thermally connected to the heat-conducting layer, the connecting portion being capable of being thermally connected to the plurality of heat-transporting portions,
wherein the heat-conducting layer and the heat-transporting portions are thermally connected to each other via at least one connecting portion.
8. The semiconductor device according to claim 1 , wherein the second substrate includes a via penetrating the second face and the third face and the heat-conducting layer and the first substrate are thermally connected to each other through the via.