Nonvolatile semiconductor memory device and method for manufacturing the same

1. A nonvolatile semiconductor memory device, comprising:

a first connector extending in a first direction;

a first conductive layer electrically connected to the first connector, the first conductive layer including

a first planar region spreading to cross the first direction,

a first overlap region overlapping the first connector in the first direction and being continuous with the first planar region,

a first side surface region extending along the first planar region and being continuous with the first planar region and the first overlap region, the first side surface region including a first side surface extension end portion and a first side surface middle portion, the first side surface middle portion being positioned between the first side surface extension end portion and the first overlap region, and

a first crossing side surface region extending along the first planar region and being continuous with the first planar region and the first overlap region, the first crossing side surface region including a first crossing side surface extension end portion and a first crossing side surface middle portion, the first crossing side surface middle portion being positioned between the first crossing side surface extension end portion and the first overlap region,

wherein a distance between the first side surface extension end portion and the first crossing side surface extension end portion is longer than a distance between the first side surface middle portion and the first crossing side surface middle portion;

a second connector extending in the first direction;

a second conductive layer electrically connected to the second connector, the second conductive layer including

a second planar region spreading along the first planar region,

a second overlap region overlapping the second connector in the first direction and being continuous with the second planar region, at least a portion of the second overlap region being disposed between the second connector and the first planar region,

a second side surface region continuous with the second planar region and the second overlap region and aligned with an extension direction of the first side surface region, the second side surface region including a second side surface extension end portion and a second side surface middle portion, the second side surface middle portion being positioned between the second side surface extension end portion and the second overlap region, and

a second crossing side surface region continuous with the second planar region and the second overlap region and aligned with an extension direction of the first crossing side surface region, the second crossing side surface region including a second crossing side surface extension end portion and a second crossing side surface middle portion, the second crossing side surface middle portion being positioned between the second crossing side surface extension end portion and the second overlap region,

wherein a distance between the second side surface extension end portion and the second crossing sloe surface extension end portion is longer than a distance between the second side surface middle portion and the second crossing side surface middle portion;

a first insulating region provided between the first conductive layer and the second conductive layer; and

a memory portion connected to the first planar region and the second planar region.

2. The device according to claim 1 , wherein a length along the first direction of the first overlap region is longer than a length along the first direction of the first planar region.

3. The device according to claim 2 , wherein the length along the first direction of the first overlap region is longer than a length along the first direction of the second overlap region.

4. The device according to claim 1 , further comprising:

a third connector extending in the first direction;

a third conductive layer electrically connected to the third connector, the third conductive layer including

a third planar region spreading along the second planar region, at least a portion of the second planar region being disposed between the first planar region and the third planar region,

a third overlap region overlapping the third connector in the first direction and being continuous with the third planar region, at least a portion of the third overlap region being disposed between the third connector and the second planar region,

a third side surface region continuous with the third planar region and the third overlap region and aligned with an extension direction of the second side surface region, the third side surface region including a third side surface extension end portion and a third side surface middle portion, the third side surface middle portion being positioned between the third side surface extension end portion and the third overlap region, and

a third crossing side surface region continuous with the third planar region and the third overlap region and aligned with an extension direction of the second crossing side surface region, the third crossing side surface region including a third crossing side surface extension end portion and a third crossing side surface middle portion, the third crossing side surface middle portion being positioned between the third crossing side surface extension end portion and the third overlap region,

wherein a distance between the third side surface extension end portion and the third crossing side surface extension end portion is longer than a distance between the third side surface middle portion and the third crossing side surface middle portion; and

a second insulating region provided between the second conductive layer and the third conductive layer,

the memory portion being further connected to the third planar region.

5. The device according to claim 4 , wherein

a length of the first overlap region in a perpendicular direction is longer than a length of the first side surface region in the perpendicular direction, the perpendicular being perpendicular to the extension direction of the first side surface region and aligned with the first planar region,

a length of the second overlap region in the perpendicular direction is longer than a length of the second side surface region in the perpendicular direction, and

a length of the third overlap region in the perpendicular direction is longer than a length of the third side surface region in the perpendicular direction.

6. The device according to claim 4 , wherein

at least a portion of the third side surface region is disposed between the second side surface region and the second crossing side surface region,

at least a portion of the third crossing side surface region is disposed between the third side surface region and the second crossing side surface region,

at least a portion of the second side surface region is disposed between the first side surface region and the first crossing side surface region, and

at least a portion of the second crossing side surface region is disposed between the second side surface region and the first crossing side surface region.

7. The device according to claim 4 , wherein

the first side surface region extends along a second direction, the second direction being aligned with the first planar region,

a length in the second direction of the first overlap region is shorter than a length in the second direction of the second overlap region, and

the length in the second direction of the second overlap region is shorter than a length in the second direction of the third overlap region.

8. The device according to claim 1 , wherein

the first crossing side surface region includes a first portion and a second portion, the second portion being provided between the first portion and the first overlap region,

the first portion includes:

a first partial region aligned with a third direction, the third direction being aligned with the first planar region; and

a first crossing partial region connected to the first partial region and aligned with a direction crossing the third direction,

the second portion includes:

a second partial region aligned with the third direction; and

a second crossing partial region connected to the second partial region and aligned with the direction crossing the third direction, and

a length in the third direction of the first partial region is longer than a length in the third direction of the second partial region.

9. The device according to claim if wherein

the first crossing side surface region includes a plurality of step portions arranged in the extension direction of the first crossing side surface region, and

lengths of the plurality of step portions in the extension direction of the first crossing side surface region are longer away from the first overlap region.

10. The device according to claim 1 , wherein

at least a portion of the first side surface region is tilted with respect to the first direction, and

at least a portion of the first crossing side surface region is tilted with respect to the first direction.

11. The device according to claim 1 , wherein

the memory portion includes:

a semiconductor layer extending in the first direction; and

a memory film provided between the semiconductor layer and the first planar region and between the semiconductor layer and the second planar region.

12. The device according to claim 1 , wherein an angle between the extension direction of the first side surface region and the extension direction of the first crossing side surface region is less than 90 degrees.