Light-emitting semiconductor component and method of producing light-emitting semiconductor components
A radiation-emitting semiconductor device includes at least one semiconductor chip having a semiconductor layer sequence having an active region that produces radiation; a mounting surface on which at least one electrical contact for external contacting of the semiconductor chip is formed, wherein the mounting surface runs parallel to a main extension plane of the semiconductor layer sequence; a radiation exit surface running at an angle to or perpendicularly to the mounting surface; a radiation-guiding layer arranged in a beam path between the semiconductor chip and the radiation exit surface; and a reflector body adjacent to the radiation-guiding layer in regions and in a top view of the semiconductor device covers the semiconductor chip.
1. A method of producing a plurality of radiation-emitting semiconductor devices comprising:
a) providing a plurality of semiconductor chips which each have a semiconductor layer sequence having an active region that produces radiation;
b) forming a radiation-guiding layer adjacent to the semiconductor chips;
c) molding a reflector material around the radiation-guiding layer at least in regions to form a reflector body; and
d) singulating into the radiation-emitting semiconductor devices, wherein each semiconductor device has at least one semiconductor chip, and during singulation, the radiation-guiding layer and the reflector body are severed such that the radiation-guiding layer forms a radiation exit surface of the singulated semiconductor devices,
wherein, before d), the radiation-guiding layer is completely surrounded by the reflector body in the lateral direction, and is exposed in d).
2. The method according to claim 1 , wherein, before c), separating trenches are formed in the radiation-guiding layer between adjacent semiconductor chips.
3. The method according to claim 1 , wherein the semiconductor chips are electrically contacted after b).
4. The method according to claim 1 , wherein the semiconductor chips are electrically contacted through openings in the radiation-guiding layer.
5. The method according to claim 1 , wherein, in b), the radiation-guiding layer is formed on to the side faces of the semiconductor chips.
6. The method according to claim 1 , wherein the side faces of the semiconductor chips are provided with a further reflector material before formation of the radiation-guiding layer.
7. The method according to claim 1 , wherein the radiation-guiding layer comprises a radiation-converting material, and a color locus of the radiation radiated by the semiconductor device is established after d) by removal of material from the radiation-guiding layer.
8. A method of producing a plurality of radiation-emitting semiconductor devices comprising:
a) providing a plurality of semiconductor chips which each have a semiconductor layer sequence having an active region that produces radiation;
b) forming a radiation-guiding layer adjacent to the semiconductor chips;
c) molding a reflector material around the radiation-guiding layer at least in regions to form a reflector body; and
d) singulating into the radiation-emitting semiconductor devices, wherein each semiconductor device has at least two semiconductor chips and, during singulation, the radiation-guiding layer and the reflector body are severed in a lateral direction such that the radiation-guiding layer forms a radiation exit surface of the singulated semiconductor devices,
wherein the side faces of the semiconductor chips are provided with a further reflector material before formation of the radiation-guiding layer.
9. The method according to claim 8 , wherein, before d), the radiation-guiding layer is completely surrounded by the reflector body in the lateral direction, and is exposed in d).