Semiconductor packages having EMI shielding parts and methods of fabricating the same
A semiconductor package may include a semiconductor device mounted on a package substrate, a conductive roof located over the semiconductor device, a plurality of conductive walls disposed on the package substrate and arrayed in a closed loop line surrounding the semiconductor device. Conductive pillars may be disposed in regions between the conductive walls on the package substrate and bonded to the conductive roof. The semiconductor package may include a first dielectric layer filling a space between the package substrate and the conductive roof.
1. A semiconductor package comprising:
a semiconductor device mounted on a package substrate;
a conductive roof located over the semiconductor device;
a plurality of conductive walls disposed on the package substrate and arrayed to surround the semiconductor device;
conductive pillars disposed on the package substrate and bonded to the conductive roof, the plurality of conductive pillars being disposed in regions between the conductive walls to provide interconnecting tunnels corresponding to spaces between the conductive walls and the conductive pillars;
a first dielectric layer filling a space between the package substrate and the conductive roof;
first landing patterns disposed on a first surface of the package substrate and combined with bottom portions of the conductive pillars;
first ground patterns disposed on a second surface of the package substrate opposite to the first landing patterns; and
first internal connectors electrically connecting the first landing patterns to the first ground patterns.
2. The semiconductor package of claim 1 , wherein the conductive roof, the conductive walls and the conductive pillars constitute an electromagnetic interference (EMI) shielding part substantially enclosing the semiconductor device.
3. The semiconductor package of claim 1 , further comprising a second dielectric layer covering a surface of the conductive roof opposite to the first dielectric layer and including a visible dye.
4. The semiconductor package of claim 3 , wherein the second dielectric layer includes an epoxy molding compound (EMC) containing a carbon black material.
5. The semiconductor package of claim 3 , wherein sidewalls of the second dielectric layer are vertically aligned with sidewalls of the first dielectric layer, respectively.
6. The semiconductor package of claim 1 , wherein the conductive roof includes copper or copper alloy.
7. The semiconductor package of claim 1 , wherein each of the conductive walls is a metal bar extending in one direction and is disposed to have a certain height from the package substrate.
8. The semiconductor package of claim 7 , wherein the metal bar includes copper or copper alloy.
9. The semiconductor package of claim 8 , wherein each of the conductive walls includes the metal bar and a diffusion barrier layer coated on an entire surface of the metal bar.
10. The semiconductor package of claim 1 , wherein top portions of the conductive pillars are combined with a bottom surface of the conductive roof by a soldering interface.
11. The semiconductor package of claim 10 , wherein the conductive pillars are solder balls.
12. The semiconductor package of claim 1 , wherein top surfaces of the conductive pillars are substantially coplanar with top surfaces of the conductive walls.
13. The semiconductor package of claim 12 , wherein top portions of the conductive walls are combined with the bottom surface of the conductive roof by a mechanical contact.
14. The semiconductor package of claim 1 , wherein top surfaces of the conductive pillars are located at a level which is higher than a level of top surfaces of the conductive walls.
15. The semiconductor package of claim 14 , wherein the first dielectric layer extends into spaces between a bottom surface of the conductive roof and the top portions of the conductive pillars.
16. The semiconductor package of claim 1 , wherein the first dielectric layer includes extension portions that fill the interconnecting tunnels.
17. The semiconductor package of claim 1 , wherein the conductive walls and the conductive pillars are grounded.
18. A semiconductor package comprising:
a semiconductor device mounted on a package substrate;
a conductive roof located over the semiconductor device;
a plurality of conductive walls disposed on the package substrate and arrayed to surround the semiconductor device;
conductive pillars disposed in regions between the conductive walls on the package substrate and bonded to the conductive roof, a first portion of a sidewall of each conductive pillar being combined with one of the conductive walls by a bridge portion and a second portion of a sidewall of each conductive pillar being spaced apart from one of the conductive walls to provide an interconnecting tunnel corresponding to a space; and
a first dielectric layer filling a space between the package substrate and the conductive roof.
19. A semiconductor package comprising:
a semiconductor device mounted on a package substrate;
a conductive roof located over the semiconductor device;
a plurality of conductive walls disposed on the package substrate and arrayed in a closed loop line surrounding the semiconductor device;
conductive pillars disposed in regions between the conductive walls on the package substrate and bonded to the conductive roof;
a first dielectric layer filling a space between the package substrate and the conductive roof;
first landing patterns disposed on a first surface of the package substrate and combined with bottom portions of the conductive pillars;
first ground patterns disposed on a second surface of the package substrate opposite to the first landing patterns; and
first internal connectors electrically connecting the first landing patterns to the first ground patterns.