Poly(thioaminal) probe based lithography
Methods and materials for patterning a substrate are disclosed herein. A poly(thioaminal) material may be utilized as a thermal resist material for patterning substrates in a thermal scanning probe lithography process. The poly(thioaminal) material may be functionalized with an electron withdrawing group and various monomers may be volatilized upon exposure to a thermal scanning probe.
1. A thermal resist material, comprising:
a poly(thioaminal) thermal resist material having a CH 2 —N(R′)—CH 2 —S—R—S repeating group wherein each instance of R is independently selected from the group consisting of alkyl, aryl, and oligomer, and wherein R′ is an electron withdrawing group selected from the group consisting of CnF n+1 , CnF n−1 , C 6 H 4 X, and heterocyclyl thereof, and wherein X is selected from the group consisting of Cl, CF 3 , and F.
2. The material of claim 1 , wherein each instance of R is selected to tune a glass transition temperature of the poly(thioaminal) thermal resist material.
3. The material of claim 1 , wherein R is a functional group selected from the group consisting of alkyl, aryl, ether, siloxane, styrene, carbonate, lactide, methacrylate, acrylate, polyolefin, polyester, polyamide, polyamino, and combinations thereof.
4. The material of claim 1 , wherein each instance of R includes a hydroxyl substituent.
5. The material of claim 1 , wherein each instance of R is selected so the poly(thioaminal) thermal resist material has a softening point between about 40° C. and about 50° C.
6. The material of claim 1 , wherein each instance of R is
wherein each W is independently hydrogen or an electron withdrawing group, and Z is selected from the group consisting of CH 2 and C(CF 3 ) 2 .
7. A thermal resist material, comprising:
a poly(thioaminal) thermal resist material having an S—C—NH—R—NH—C repeating group, wherein each instance of R is a functional group selected from the group consisting of siloxane, styrene, carbonate, lactide, methacrylate, acrylate, polyamide, polyamino,
and combinations thereof, wherein each W is independently hydrogen or an electron withdrawing group, and Z is selected from the group consisting of CH 2 and C(CF 3 ) 2 .
8. The material of claim 7 , wherein each instance of R includes a hydroxyl substituent.
9. The material of claim 7 , wherein each instance of R is selected so the poly(thioaminal) thermal resist material has a softening point between about 40° C. and about 50° C.