Package on-package with cavity in interposer
A package includes an interposer, which includes a core dielectric material, a through-opening extending from a top surface to a bottom surface of the core dielectric material, a conductive pipe penetrating through the core dielectric material, and a device die in the through-opening. The device die includes electrical connectors. A top package is disposed over the interposer. A first solder region bonds the top package to the conductive pipe, wherein the first solder region extends into a region encircled by the conductive pipe. A package substrate is underlying the interposer. A second solder region bonds the package substrate to the interposer.
1. A method comprising:
bonding an interposer to a package substrate, wherein the interposer comprises:
a core dielectric material; and
a conductive pipe penetrating through the core dielectric material, with the conductive pipe being hollow, wherein a first solder region bonds the interposer to the package substrate, with the first solder region electrically coupled to the conductive pipe;
bonding a die to the package substrate, wherein the die is dispensed in a through-opening of the interposer; and
bonding a top package to the interposer, wherein a second solder region bonds the top package to the conductive pipe, and the second solder region is in physical contact with the conductive pipe.
2. The method of claim 1 , wherein the interposer further comprises:
a metal pad underlying the conductive pipe, with the first solder region bonded to a bottom surface of the metal pad.
3. The method of claim 2 , wherein the metal pad seals a bottom end of, and is in contact with, the conductive pipe.
4. The method of claim 2 , wherein the first solder region and the second solder region are in physical contact with opposite sides of the metal pad.
5. The method of claim 1 , wherein the second solder region is filled into the conductive pipe.
6. The method of claim 1 , wherein during the bonding the interposer to the package substrate, a dielectric film is disposed between the interposer and the package substrate, wherein the dielectric film is a discrete film separated from the interposer and the package substrate, and wherein the first solder region is pressed to penetrate through the dielectric film.
7. The method of claim 1 , wherein when the interposer is bonded to the package substrate, a dielectric film is disposed between the interposer and the package substrate, and wherein the dielectric film has a pre-formed opening, with the first solder region penetrates through the pre-formed opening.
8. The method of claim 1 further comprising, after the die and the interposer are bonded to the package substrate, dispensing an underfill between the die and the package substrate.
9. A method comprising:
placing a dielectric film over a package substrate, wherein the dielectric film comprises a first through-opening at a center region of the dielectric film;
placing an interposer over the dielectric film, wherein the interposer comprises:
a core dielectric material; and
a conductive pipe penetrating through the core dielectric material, wherein a first solder region of the package substrate penetrates through the dielectric film to electrically couple to the conductive pipe;
reflowing the first solder region to join the interposer to the package substrate; and
bonding a top package to the interposer, wherein a second solder region bonds the top package to the conductive pipe.
10. The method of claim 9 , wherein after the reflowing, a second through-opening of the interposer is aligned to the first through-opening.
11. The method of claim 10 further comprising:
placing a device die in the first opening and the second opening; and
bonding the device die to the package substrate.
12. The method of claim 9 , wherein after the bonding the top package to the interposer, the second solder region fills at least a part of a region encircled by the conductive pipe.
13. The method of claim 12 , wherein after the bonding the top package to the interposer, an entirety of the region encircled by the conductive pipe is filled by the second solder region.
14. The method of claim 9 , wherein the interposer further comprises a metal pad, wherein a top surface of the metal pad is joined to the conductive pipe, and a bottom surface of the metal pad is bonded to the first solder region.
15. A method comprising:
placing a dielectric film over a package substrate, wherein the dielectric film comprises a first through-opening at a center region of the dielectric film, and wherein a first solder region of the package substrate penetrates through the dielectric film;
placing an interposer over the dielectric film, wherein the interposer comprises:
a core dielectric material;
a conductive pipe penetrating through the core dielectric material; and
a metal pad underlying and contacting the conductive pipe, wherein the first solder region of the package substrate contacts a bottom surface of the metal pad;
bonding a device die to a top surface of the package substrate, wherein the device die extends into the first through-opening; and
bonding a top package to electrically couple to the package substrate through the first solder region, wherein the bonding comprises reflowing the first solder region to join the interposer to the package substrate.
16. The method of claim 15 , wherein the interposer comprises a second through-opening aligned to the first through-opening of the dielectric film after the first solder region is reflowed.
17. The method of claim 15 further comprising bonding a top package to the interposer, wherein a second solder region fills at least a part of a region encircled by the conductive pipe, and the second solder region joins the top package to the conductive pipe.
18. The method of claim 17 , wherein after the bonding the top package to the interposer, an entirety of the region encircled by the conductive pipe is filled by the second solder region.
19. The method of claim 15 further comprising pressing the first solder region to penetrate through the dielectric film.
20. The method of claim 1 , wherein before the interposer is bonded to the package substrate, the through-opening penetrates through the interposer, and extends from a topmost surface to a bottommost surface of the interposer.