Semiconductor device, power control device and electronic system
A driver integrated circuit includes a bootstrap circuit (BSC) configured to output a boot power supply voltage (VB) based on a first power supply voltage, the boot power supply voltage being higher than the first power supply voltage; a level shift circuit (LSC) configured to output an output pulse signal based on an input pulse signal and the boot power supply voltage; a high side driving circuit (HSU) configured to output a high side driving voltage based on the boot power supply voltage and the output pulse signal, wherein the bootstrap circuit includes a sense metal oxide semiconductor (MOS) transistor and a boot MOS transistor, wherein the sense MOS transistor includes a depression-type transistor.
1. A driver integrated circuit, comprising:
a bootstrap circuit configured to output a boot power supply voltage based on a first power supply voltage, the boot power supply voltage being higher than the first power supply voltage;
a level shift circuit configured to output an output pulse signal based on an input pulse signal and the boot power supply voltage;
a high side driving circuit configured to output a high side driving voltage based on the boot power supply voltage and the output pulse signal,
wherein the bootstrap circuit includes a sense metal oxide semiconductor transistor and a boot metal oxide semiconductor transistor,
wherein the sense metal oxide semiconductor transistor comprises a depression-type transistor.
2. A driver integrated circuit according to claim 1 ,
wherein the sense metal oxide semiconductor transistor produces a sense voltage based on the boot power supply voltage and the first power supply voltage, and
wherein the bootstrap circuit includes a comparator circuit which drives the boot metal oxide semiconductor transistor based on a difference between the first power supply voltage and the sense voltage.