IP Library Granted Patent US 9,874,768
Granted Patent B2
US 9,874,768 · App. 15/463,177 · Granted Jan 23, 2018

Optical modulation device

Inventors: Takeshi Baba (Tsukuba, JP); Tatsuya Usuki (Tsukuba, JP); Suguru Akiyama (Tsukuba, JP)
Assignees: FUJITSU LIMITED; PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATION
G02F1/0121G02F1/025G02F1/2257G02F2001/0152G02F2001/212
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Quick Facts
Patent No.
US 9,874,768
App. No.
15/463,177
Granted
Jan 23, 2018
Kind
B2
Abstract

An optical modulation device includes: an optical waveguide formed above a substrate; a phase modulator disposed on part of the optical waveguide; a capacitor connected to the phase modulator and including a lower electrode and an upper electrode; a resistor connected in parallel to the capacitor; and an appended part integrated with the upper electrode and electrically connected to the resistor, wherein the appended part is smaller in area than the capacitor (upper electrode).

Claims (21)

1. An optical modulation device, comprising:

a silicon substrate;

a silicon optical waveguide formed above the silicon substrate;

a phase modulator disposed on part of the silicon optical waveguide;

a capacitor connected to the phase modulator and including a lower electrode and an upper electrode;

a resistor connected in parallel to the capacitor;

an appended part integrated with the upper electrode and connected to the resistor; and

an insulating layer provided between the phase modulator and the lower electrode disposed above the phase modulator, at a position included in the capacitor in a plane view,

wherein the appended part is smaller in area than the capacitor.

2. The optical modulation device according to claim 1 , further comprising a conductive layer connected to the resistor,

wherein the appended part includes a connection portion connected to the conductive layer.

3. The optical modulation device according to claim 1 , wherein the upper electrode is smaller in area than the lower electrode.

4. An optical modulation device, comprising:

a silicon substrate;

a silicon optical waveguide formed above the silicon substrate;

a phase modulator disposed on part of the silicon optical waveguide;

a capacitor connected to the phase modulator and including a lower electrode and an upper electrode;

a resistor connected in parallel to the capacitor;

an appended part integrated with the upper electrode and connected to the resistor; and

a driver circuit which is disposed directly above the capacitor and drives the phase modulator,

wherein the appended part is smaller in area than the capacitor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 27, 2017
From: BABA, TAKESHI; USUKI, TATSUYA; AKIYAMA, SUGURU
To: FUJITSU LIMITED; PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATION
Reel/Frame 041754/0291 →
Priority Claims (1)
JP 2016-068193 · Mar 30, 2016 · national
Continuity (1)
Related Publication 20170285372A1 · Oct 5, 2017