IP Library Granted Patent US 9,896,468
Granted Patent B2
US 9,896,468 · App. 14/413,102 · Granted Feb 20, 2018

Metal alkoxide compound, thin-film-forming material, method for producing thin film, and alcohol compound

Inventors: Atsushi Sakurai (Tokyo, JP); Masako Hatase (Tokyo, JP); Naoki Yamada (Tokyo, JP); Tsubasa Shiratori (Tokyo, JP); Akio Saito (Tokyo, JP); Tomoharu Yoshino (Tokyo, JP)
Assignee: ADEKA CORPORATION
C07F15/065C07C251/04C07C251/08C07F1/08C07F15/045C23C16/18C23C16/406C23C16/408C07F7/28
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Quick Facts
Patent No.
US 9,896,468
App. No.
14/413,102
Granted
Feb 20, 2018
Kind
B2
Abstract

Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, R 1 represents a methyl group or an ethyl group, R 2 represents a hydrogen atom or a methyl group, R 3 represents a C 1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

Claims (10)

1. A metal alkoxide compound represented by general formula (I):

In the formula, R 1 represents a methyl group or an ethyl group, R 2 represents a hydrogen atom or a methyl group, R 3 represents a C 1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

2. The metal alkoxide compound according to claim 1 , wherein, in the general formula (I), M is copper, nickel, or cobalt.

3. The metal alkoxide compound according to claim 1 , wherein, in the general formula (I), M is copper, and R 2 is a hydrogen atom.

4. A thin-film-forming material including the metal alkoxide compound according to claim 1 .

5. A method for producing a thin film, the method comprising:

introducing, into a deposition chamber in which a substrate is placed, a vapor that has been obtained by vaporizing the thin-film-forming material according to claim 4 and that includes said metal alkoxide compound; and

forming a metal-containing thin film on a surface of the substrate by decomposing and/or chemically reacting said metal alkoxide compound.

6. A thin-film-forming material including the metal alkoxide compound according to claim 2 .

7. A thin-film-forming material including the metal alkoxide compound according to claim 3 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 6, 2015
From: SAKURAI, ATSUSHI; HATASE, MASAKO; YAMADA, NAOKI; SHIRATORI, TSUBASA; SAITO, AKIO; YOSHINO, TOMOHARU
To: ADEKA CORPORATION
Reel/Frame 034644/0753 →
Priority Claims (1)
JP 2012-249511 · Nov 13, 2012 · national
Continuity (1)
Related Publication 20150175642A1 · Jun 25, 2015