Manufacture method of TFT substrate and sturcture thereof
The present invention provides a manufacture method of an oxide semiconductor TFT substrate, and the method comprises steps of: 1, forming a gate ( 3 ) and a first heavily doped transparent conducting thin film layer ( 2 ) on a substrate ( 1 ); 2, deposing a gate isolation layer ( 4 ); 3, forming an island shaped oxide semiconductor layer ( 5 ); 4, forming an island shaped photoresistor layer ( 6 ); 5, forming a source/a drain ( 8 ), and a second, a third heavily doped transparent conducting thin film layer ( 7, 9 ), and the source/the drain ( 8 ) contact the two side parts ( 53 ) of the island shaped oxide semiconductor layer ( 5 ) via the second heavily doped transparent conducting thin film layer ( 7 ) to establish electrical connections; 6, deposing and patterning a protecting layer ( 10 ); 7, deposing and patterning a pixel electrode layer ( 11 ) which contacts the source/the drain ( 8 ) via the third heavily doped transparent conducting thin film layer ( 9 ) to establish electrical connections; 8, implementing anneal process.
1. A manufacture method of an oxide semiconductor TFT substrate, comprising steps of:
step 1 , providing a substrate, and sequentially deposing and patterning a first heavily doped transparent conducting thin film layer and a first metal layer on the substrate to form a gate and the first heavily doped transparent conducting thin film layer located at a lower surface of the gate with the same shape of the gate;
step 2 , deposing a gate isolation layer on the gate and the substrate;
step 3 , deposing and patterning an oxide semiconductor layer on the gate isolation layer to form an island shaped oxide semiconductor layer directly over the gate;
step 4 , deposing and patterning an etching stopper layer on the island shaped oxide semiconductor layer and the gate isolation layer to form an island shaped etching stopper layer on the island shaped oxide semiconductor layer;
a width of the island shaped etching stopper layer is smaller than a width of the island shaped oxide semiconductor layer; the island shaped etching stopper layer covers a central part of the island shaped oxide semiconductor layer and exposes two side parts of the island shaped oxide semiconductor layer;
step 5 , sequentially deposing and patterning a second heavily doped transparent conducting thin film layer, a second metal layer and a third heavily doped transparent conducting thin film layer on the island shaped etching stopper layer and the gate isolation layer to form a source/a drain, the second heavily doped transparent conducting thin film layer located at a lower surface of the source/the drain with the same shape of the source/the drain and the third heavily doped transparent conducting thin film layer located at an upper surface of the source/the drain with the same shape of the source/the drain;
the source/the drain contact the two side parts of the island shaped oxide semiconductor layer via the second heavily doped transparent conducting thin film layer to establish electrical connections such that the second heavily doped transparent conducting thin film layer of the source/the drain is in direct contact with the two side parts of the island shaped oxide semiconductor layer to reduce ohm contact resistance between the source/the drain and the island shaped oxide semiconductor layer;
step 6 , deposing and patterning a protecting layer on the third heavily doped transparent conducting thin film layer and the etching stopper layer to form a via located at one side of the island shaped oxide semiconductor layer;
step 7 , deposing and patterning a pixel electrode layer on the protecting layer;
the pixel electrode layer fills the via and contacts the source/the drain via the third heavily doped transparent conducting thin film layer such that the third heavily doped transparent conducting thin film layer of the source/the drain is in direct contact with the pixel electrode to establish electrical connection therebetween the source/drain and the pixel electrode with reduced ohm contact resistance between the source/the drain and the pixel electrode;
step 8 , implementing anneal process to the substrate obtained in the seventh step.
2. The manufacture method of the oxide semiconductor TFT substrate according to claim 1 , wherein material of the source/the drain is copper and material of the pixel electrode layer is ITO or IZO.
3. The manufacture method of the oxide semiconductor TFT substrate according to claim 1 , wherein material of the first heavily doped transparent conducting thin film layer, the second heavily doped transparent conducting thin film layer and the third heavily doped transparent conducting thin film layer is heavily doped ITO or heavily doped IZO.
4. The manufacture method of the oxide semiconductor TFT substrate according to claim 3 , wherein thicknesses of the first heavily doped transparent conducting thin film layer, the second heavily doped transparent conducting thin film layer and the third heavily doped transparent conducting thin film layer are respectively in a range of 5-200 nm.
5. The manufacture method of the TFT substrate according to claim 4 , wherein the thickness of the first heavily doped transparent conducting thin film layer is 10 nm, and the thickness of the second heavily doped transparent conducting thin film layer is 15 nm, and the thickness of the third heavily doped transparent conducting thin film layer is 10 nm.
6. The manufacture method of the oxide semiconductor TFT substrate according to claim 1 , wherein the island shaped oxide semiconductor layer is an IGZO semiconductor layer.
7. The manufacture method of the oxide semiconductor TFT substrate according to claim 1 , wherein material of the protecting layer is SiO 2 or SiON.
8. The manufacture method of the oxide semiconductor TFT substrate according to claim 1 , wherein operations of the patterning are accomplished by photolithography process and etching process.