Inverters and manufacturing methods thereof

1. A method comprising:

forming a first semiconductive material over a substrate;

implanting a first dopant comprising a first dopant type into the first semiconductive material to form a drain of a first tunnel FET (TFET);

implanting a second dopant comprising a second dopant type into the first semiconductive material to form a source of the first TFET;

forming a second semiconductive material over the first semiconductive material;

forming a third semiconductive material over the second semiconductive material;

implanting the first dopant comprising the first dopant type into the third semiconductive material to form a source of a second TFET; and

implanting the second dopant comprising the second dopant type into the third semiconductive material to form a drain of the second TFET, wherein the first TFET and the second TFET comprise fin field effect transistors (FinFETs).

2. The method of claim 1 , further comprising patterning the first semiconductive material and the third semiconductive material to form channel regions between the sources and the drains of the first TFET and the second TFET, respectively.

3. The method of claim 2 , wherein patterning the first semiconductive material and the third semiconductive material further comprises patterning the second semiconductive material.

4. The method of claim 1 , wherein forming the first semiconductive material comprises forming a plurality of layers of the first semiconductive material, wherein implanting the first dopant and the second dopant into the first semiconductive material comprise implanting the first dopant and the second dopant into the plurality of layers of the first semiconductive material, wherein the plurality of layers of the first semiconductive material comprises alternating layers of a first material and a second material, the second material being different than the first material, and wherein the second material comprises a first sacrificial material disposed between the source and the drain of the first TFET; and wherein forming the third semiconductive material comprises forming a plurality of layers of the third semiconductive material, wherein implanting the first dopant and the second dopant into the third semiconductive material comprise implanting the first dopant and the second dopant into the plurality of layers of the third semiconductive material, wherein the plurality of layers of the third semiconductive material comprises alternating layers of the first material and a third material, the third material being different than the first material, and wherein the third material comprises a second sacrificial material disposed between the source and the drain of the second TFET.

5. The method of claim 4 , further comprising:

removing the first sacrificial material of the second material and removing the second sacrificial material of the third material, wherein the first material left remaining of the first TFET comprises a channel region comprising a plurality of channels disposed between the source and the drain of the first TFET, wherein the first material left remaining of the second TFET comprises a channel region comprising a plurality of channels disposed between the source and the drain of the second TFET;

forming a gate dielectric around the channel regions of the first TFET and the second TFET; and

forming a gate around the gate dielectric.

6. The method of claim 1 , wherein forming the first semiconductive material comprises forming a plurality of layers of the first semiconductive material, wherein implanting the first dopant and the second dopant into the first semiconductive material comprise implanting the first dopant and the second dopant into the plurality of layers of the first semiconductive material, wherein the plurality of layers of the first semiconductive material comprises alternating layers of a first material and a second material, the second material being different than the first material, and wherein the first material comprises a sacrificial material disposed between the source and the drain of the first TFET; and wherein forming the third semiconductive material comprises forming a plurality of layers of the third semiconductive material, wherein implanting the first dopant and the second dopant into the third semiconductive material comprise implanting the first dopant and the second dopant into the plurality of layers of the third semiconductive material, wherein the plurality of layers of the third semiconductive material comprises alternating layers of the first material and a third material, the third material being different than the first material, and wherein the sacrificial material of the first material is disposed between the source and the drain of the second TFET.

7. The method of claim 6 , further comprising:

removing the sacrificial material of the first material, wherein the second material left remaining of the first TFET comprises a channel region comprising a plurality of channels disposed between the source and the drain of the first TFET, wherein the third material left remaining of the second TFET comprises a channel region comprising a plurality of channels disposed between the source and the drain of the second TFET;

forming a gate dielectric around the channel regions of the first TFET and the second TFET; and

forming a gate around the gate dielectric.

8. A method comprising:

forming a first semiconductor region over a substrate;

forming a junction isolation material over the first semiconductor region;

forming a second semiconductor region over the junction isolation material;

patterning the first semiconductor region and the second semiconductor region such that a first source region, a first drain region, and a first channel region are formed in the first semiconductor region, and a second source region, a second drain region, and a second channel region are formed in the second semiconductor region;

implanting a first plurality of dopants into the first semiconductor region to dope the first source region and the first drain region, the first drain region having a different dopant type than the first source region; and

implanting a second plurality of dopants into the second semiconductor region to dope the second source region and the second drain region, the second drain region having a different dopant type than the second source region.

9. The method of claim 8 , wherein forming the junction isolation material comprises forming a third semiconductor region over the first semiconductor region.

10. The method of claim 9 , further comprising doping the third semiconductor region.

11. The method of claim 8 , further comprising removing portions of the junction isolation material overlying the first channel region and underlying the second channel region.

12. The method of claim 8 , wherein the first drain region has a different dopant type than the second drain region.

13. The method of claim 8 , wherein the first source region has a different dopant type than the second source region.

14. The method of claim 8 , wherein the forming the first semiconductor region comprises:

forming a first plurality of layers on the substrate, the first plurality of layers including alternating layers of a first semiconductor material and a second semiconductor material.

15. The method of claim 14 , wherein the forming the second semiconductor region comprises:

forming a second plurality of layers on the junction isolation material, the second plurality of layers including alternating layers of the second semiconductor material and a third semiconductor material.

16. The method of claim 15 , wherein the patterning the first semiconductor region and the second semiconductor region comprises:

removing portions of the layers of the first semiconductor material in the first channel region; and

removing portions of the layers of the third semiconductor material in the second channel region.

17. The method of claim 15 , wherein the first semiconductor material is an n-type material, wherein the second semiconductor material is one of SiGe, Ge, GeSn, SiGeSn, or a III-V material, and wherein the third semiconductor material is a p-type material.

18. A method comprising:

forming a first device comprising:

forming a first semiconductor material over a substrate;

forming a first source region, a first drain region, and a first channel region in the first semiconductor material;

doping the first source region to have a first dopant type; and

doping the first drain region to have a second dopant type different from the first dopant type;

forming a junction isolation region over the first device;

forming a second device comprising:

forming a second semiconductor material over the junction isolation region;

forming a second source region, a second drain region, and a second channel region in the second semiconductor material;

doping the second source region to have the second dopant type; and

doping the second drain region to have the first dopant type;

forming a gate dielectric around the first channel region of the first device and the second channel region of the second device; and

forming a gate electrode around the gate dielectric.

19. The method of claim 18 , further comprising:

coupling the first source region to a voltage supply node;

coupling the second source region to a ground node;

forming a first contact electrically coupled to the first drain region and the second drain region; and

forming a second contact electrically coupled to the gate electrode.

20. The method of claim 18 , wherein the first source region is formed over the second source region, and the first drain region is formed over the second drain region.