Frequency dependent light emitting devices
An electroluminescent device described herein, in one aspect, comprises a first electrode and second electrode and a light emitting layer positioned between the first and second electrodes. A current injection gate is positioned between the first electrode and the light emitting layer or the second electrode and the light emitting layer. In some embodiments, the current injection gate comprises a semiconductor layer of electronic structure restricting injected current flow from the first or second electrode through the semiconductor layer as a function of alternating current voltage frequency applied to the first and second electrodes.
1. An electroluminescent device comprising:
a first electrode and second electrode;
an organic light emitting layer positioned between the first electrode and the second electrode, wherein the organic light emitting layer comprises a triplet emitter phase; and
a current injection gate positioned between the first electrode and the light emitting layer or between the second electrode and the light emitting layer, wherein the current injection gate comprises a semiconductor layer of electronic structure restricting injected current flow from the first or second electrode through the semiconductor layer as a function of alternating current voltage frequency applied to the first and second electrodes.
2. The electroluminescent device of claim 1 , wherein the first electrode, second electrode or both are radiation transmissive.
3. The electroluminescent device of claim 1 , wherein the organic light emitting layer further comprises a singlet emitter phase.
4. The electroluminescent device of claim 3 , wherein the singlet emitter phase comprises one or more conjugated polymers or oligomers, small molecules or mixtures thereof.
5. The electroluminescent device of claim 1 , wherein the triplet emitter phase comprises a phosphorescent transition metal complex.
6. The electroluminescent device of claim 1 , wherein the triplet emitter phase is dispersed in the singlet emitter phase.
7. The electroluminescent device of claim 6 , wherein the organic light emitting layer comprises a dielectric host for the singlet emitter phase and the triplet emitter phase.
8. The electroluminescent device of claim 1 , wherein the organic light emitting layer further comprises a nanoparticle phase.
9. The electroluminescent device of claim 8 , wherein the nanoparticle phase carbon nanoparticles, inorganic nanoparticles or mixtures thereof.
10. The electroluminescent device of claim 1 , wherein injected current flow through the semiconductor layer of the gate decreases with increasing frequency of the applied alternating current voltage.
11. The electroluminescent device of claim 1 , wherein the semiconductor layer is a composite layer comprising inorganic particles dispersed in a conjugated polymeric matrix.
12. The electroluminescent device of claim 1 , wherein the semiconductor layer is formed of an intrinsic semiconductor.
13. The electroluminescent device of claim 12 , wherein the intrinsic semiconductor is an inorganic semiconductor.
14. The electroluminescent device of claim 12 , wherein the intrinsic semiconductor is an organic semiconductor.
15. The electroluminescent device of claim 1 , wherein the semiconductor layer is formed of a material having a bandgap of at least 2 eV.
16. The electroluminescent device of claim 1 further comprising an electron dopant layer on a first side of the light emitting organic layer and hole dopant layer on an opposing second side of the light emitting organic layer.
17. The electroluminescent device of claim 1 having an efficiency of at least 100 lm W −1 .
18. A method of generating light comprising:
providing an electroluminescent device comprising first and second electrodes, an organic light emitting layer comprising a triplet emitter phase and positioned between the first and second electrodes, and a current injection gate positioned between the first electrode and the light emitting layer or the second electrode and the light emitting layer, the current injection gate comprising a semiconductor layer;
applying an alternating current voltage to the first and second electrodes;
restricting injected current flow from the first or the second electrode through the semiconductor layer of the gate as a function of alternating current voltage frequency; and
radiatively recombining holes and electrons in the light emitting layer.
19. The method of claim 18 , wherein injected current flow through the semiconductor layer decreases with increasing frequency of the applied alternating current voltage.
20. The method of claim 18 , wherein the electroluminescent device further comprises an electron dopant layer on a first side of the light emitting layer and hole dopant layer on an opposing second side of the light emitting layer.
21. The method of claim 20 , wherein holes and electrons radiatively recombined in the light emitting layer are generated by the hole and electron dopant layers.
22. An electroluminescent device comprising:
a first electrode and second electrode;
an organic light emitting layer positioned between the first electrode and the second electrode, wherein the organic light emitting layer comprises a triplet emitter phase;
an electron dopant layer on a first side of the organic light emitting layer and hole dopant layer on an opposing second side of the organic light emitting layer; and
a nanoparticle phase bridging an interface formed by the electron dopant layer and organic light emitting layer.
23. The electroluminescent device of claim 22 , wherein the nanoparticle phase bridges an interface formed by the hole dopant layer and the organic light emitting layer.