Method of negative tone development using a copolymer multilayer electrolyte and articles made therefrom
Disclosed herein is a method, comprising disposing a first composition on a substrate, wherein the first composition comprises a first block copolymer comprising a first block and a second block, wherein the first block comprises a repeat unit containing a hydrogen acceptor or a hydrogen donor, and the second block comprises a repeat unit containing a blocked donor when the repeat unit of the first block is a hydrogen acceptor, or a blocked acceptor when the repeat unit of the first block is a hydrogen donor; and a solvent; and deprotecting the blocked acceptor or the blocked donor with a deprotecting agent.
1. A method, comprising:
disposing a first composition on a substrate, wherein the first composition comprises:
a first block copolymer comprising a first block and a second block, wherein the first block comprises a repeat unit containing a hydrogen acceptor or a hydrogen donor, and the second block comprises a repeat unit containing a blocked donor when the repeat unit of the first block is a hydrogen acceptor, or a blocked acceptor when the repeat unit of the first block is a hydrogen donor; and a solvent; and
deprotecting the blocked acceptor or the blocked donor with a deprotecting agent.
2. The method of claim 1 , further comprising removing residual first composition from the substrate before deprotecting the blocked acceptor or the blocked donor, leaving a coating of the first block copolymer over the substrate.
3. The method of claim 1 , further comprising:
disposing a second composition on the substrate, wherein the second composition is the same or different from the first composition and comprises a second block copolymer comprising a first block and a second block, wherein the first block comprises a repeat unit containing a hydrogen acceptor or a hydrogen donor, and the second block comprises a repeat unit containing a blocked donor when the repeat unit of the first block is a hydrogen acceptor, or a blocked acceptor when the repeat unit of the first block is a hydrogen donor; and a solvent.
4. The method of claim 3 , further comprising removing residual first composition from the substrate before deprotecting the blocked acceptor or the blocked donor of the first composition, leaving a coating of the first block copolymer over the substrate, wherein the disposing of the second composition is conducted after deprotecting the blocked acceptor or the blocked donor of the first composition.
5. The method of claim 4 , further comprising removing residual second composition from the substrate, and deprotecting the blocked acceptor or the blocked donor of the second composition, leaving a coating of the second block copolymer over the coating of the first block copolymer.
6. The method of claim 1 , wherein the first block copolymer further comprises a block of a neutral polymer disposed between the first block and the second block.
7. The method of claim 1 , wherein the repeat unit of the first block of the first block copolymer contains a hydrogen acceptor.
8. The method of claim 1 , wherein the repeat unit of the first block of the first block copolymer contains a hydrogen donor.
9. The method of claim 1 , where the substrate is a semiconductor substrate comprising a photoresist pattern on which the first layer is disposed, wherein the first block of the first block copolymer is bonded to the photoresist pattern.
10. The method of claim 9 , wherein the photoresist pattern is formed by a negative tone development process, wherein the negative tone development process comprises applying a resist to the substrate, exposing a portion of resist to radiation, and removing an unexpected portion of resist by a developer.