IP Library Granted Patent US 9,928,897
Granted Patent B2
US 9,928,897 · App. 15/500,070 · Granted Mar 27, 2018

Memory module voltage regulator module (VRM)

Inventors: Reza M. Bacchus (Houston, TX); Melvin K. Benedict (Houston, TX); Stephen F. Contreras (Houston, TX); Eric L. Pope (Houston, TX); Chi K. Sides (Houston, TX); Chun-Pin Huang (Taipei, TW)
Assignee: Hewlett Packard Enterprise Development LP
G11C11/4074G11C5/06G11C5/10
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Quick Facts
Patent No.
US 9,928,897
App. No.
15/500,070
Granted
Mar 27, 2018
Kind
B2
Abstract

An example device in accordance with an aspect of the present disclosure includes a memory module having a voltage regulator module (VRM) to receive input power and deliver output power to components of the memory module at a first power plane. At least one stitching capacitor is to couple the first power plane to a second power plane.

Claims (35)

1. A memory module comprising:

a voltage regulator module (VRM) to receive input power, and provide output power to components of the memory module on a first power plane;

an electrical gap to electrically isolate the first power plane from a second power plane associated with at least one contact of the memory module; and

at least one stitching capacitor to couple the first power plane to the at least one contact associated with the second power plane, to allow return signals from the components to pass from the first power plane to the second power plane without signal integrity degradation;

wherein the at least one contact comprises at least one finger pin contact to interface with a motherboard.

2. The memory module of claim 1 , wherein the memory module is backward compatible with a motherboard that is capable of providing, to memory modules, the input power and the output power based on a multi-phase voltage regulator, wherein the gap is to isolate the memory module output power from that of the motherboard, and the memory module is based on a backward compatible form factor to interface with the motherboard.

3. The memory module of claim 1 , wherein the VRM is to identify a reference value for setting the output voltage, based on substantially matching a motherboard output voltage within acceptable design tolerances.

4. The memory module of claim 1 , wherein the signals allowed to pass by the at least one stitching capacitor include return current of memory address and command signals.

5. The memory module of claim 1 , wherein the VRM is integrated with a serial presence detect (SPD) chip of the memory module.

6. The memory module of claim 1 , wherein the VRM is integrated with a register chip of the memory module.

7. The memory module of claim 1 , wherein the memory module is a double data rate, type four, synchronous dynamic random-access memory (DDR4 SDRAM) dual inline memory module (DIMM), including a power distribution network (PDN) contained on the memory module to distribute power from the VRM to the components of the memory module.

8. The memory module of claim 1 , wherein the at least one stitching capacitor is appropriate to provide an AC signal return path without signal integrity degradation.

9. A system comprising:

a memory module, comprising:

a voltage regulator module (VRM) integrated with at least one of: a serial presence detect (SPD) chip, or a register chip, the VRM to receive input power and deliver output power to components of the memory module at a first power plane;

an electrical gap to electrically isolate the first power plane from a second power plane associated with at least one contact of the memory module; and

at least one stitching capacitor to couple the first power plane to the at least one contact associated with the second power plane, to allow return signals from the components to pass from the first power plane to the second power plane without signal integrity degradation; and

a motherboard including a single-phase voltage regulator to provide the input power to the memory module via a motherboard memory slot coupled to a motherboard power pad for power delivery by the second power plane, wherein the motherboard power pad has an appropriate size to accommodate the power associated with the components of the motherboard.

10. The system of claim 9 , wherein the motherboard is to receive the AC return current of the command address signals from components of the memory module via at least one stitching capacitor of the memory module.

11. The system of claim 9 , wherein the single-phase voltage regulator is to supply 10 Amp power to the VRM of the memory module, and the power pad is sized to accommodate the 10 Amp output of the single-phase voltage regulator.

12. A method, comprising:

receiving, at a voltage regulator module (VRM) of a memory module, input power from a motherboard;

providing, from the VRM, output power to components of the memory module on a first power plane; and

coupling, by at least one stitching capacitor, the first power plane to a second power plane associated with at least one contact of the memory module, to maintain power isolation by a gap between the first and second power planes while allowing signals from the components to pass from the first power plane to the second power plane without signal integrity degradation.

13. The method of claim 12 , further comprising coupling, by the at least one stitching capacitor, return current of memory address and command signals from the components to the second power plane of the memory module.

14. A memory module comprising:

a voltage regulator module (VRM) to receive input power, and provide output power to components of the memory module on a first power plane;

an electrical gap to electrically isolate the first power plane from a second power plane associated with at least one contact of the memory module; and

at least one stitching capacitor to couple the first power plane to the at least one contact associated with the second power plane, to allow return signals from the components to pass from the first power plane to the second power plane without signal integrity degradation;

wherein the VRM is integrated with a serial presence detect (SPD) chip of the memory module.

15. A memory module comprising:

a voltage regulator module (VRM) to receive input power, and provide output power to components of the memory module on a first power plane;

an electrical gap to electrically isolate the first power plane from a second power plane associated with at least one contact of the memory module; and

at least one stitching capacitor to couple the first power plane to the at least one contact associated with the second power plane, to allow return signals from the components to pass from the first power plane to the second power plane without signal integrity degradation;

wherein the VRM is integrated with a register chip of the memory module.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 26, 2017
From: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
To: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Reel/Frame 042590/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE NAME PREVIOUSLY RECORDED AT REEL: 041173 FRAME: 0080. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded May 8, 2017
From: BACCHUS, REZA M.; BENEDICT, MELVIN K.; CONTRERAS, STEPHEN F.; POPE, ERIC L.; SIDES, CHI K.; HUANG, CHUN-PIN
To: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Reel/Frame 042420/0162 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 3, 2017
From: BACCHUS, REZA M.; BENEDICT, MELVIN K.; CONTRERAS, STEPHEN F.; POPE, ERIC L.; SIDES, CHI K.; HUANG, CHUN-PIN
To: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Reel/Frame 041173/0080 →
Continuity (1)
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