Semiconductor device having symmetric and asymmetric active fins
A semiconductor device and a method of manufacturing the same are disclosed, which may improve the operating performance of a multi-gate transistor in a highly scaled integrated circuit device. The semiconductor device includes a first active fin unit protruding on a first region of a semiconductor substrate and extending along a first direction. The first active fin unit includes at least one first active fin having left and right profiles, which are symmetric to each other about a first center line perpendicular to a top surface of the semiconductor substrate on a cut surface perpendicular to the first direction. A second active fin unit protrudes on a second region of the semiconductor substrate and includes two second active fins, each having a left and right profiles, which are asymmetric to each other about a second center line perpendicular to the top surface of the semiconductor substrate on a cut surface.
1. A semiconductor device comprising:
a semiconductor substrate; and
an active fin unit protruding on the semiconductor substrate and extending along a first direction, the active fin unit comprising at least two active fins,
wherein each of the at least two active fins comprises a lower active fin surrounded by a device isolation layer and an upper active fin protruding from the device isolation layer,
wherein, when the active fin unit comprises two active fins, each of the two active fins has a left profile and a right profile that are asymmetric to each other about a center line, and when the active fin unit comprises at least three active fins, each of two outermost active fins has a left profile and a right profile that are asymmetric to each other about the center line, and at least one active fin between the two outermost active fins has a left profile and a right profile that are symmetric to each other about the center line,
wherein the center line is defined as a straight line disposed approximately equidistant between left and right points of the lower active fin, which are at a substantially same height above a top surface of the semiconductor substrate, and
wherein the at least one active fin is determined as symmetrical when points of a right side surface and a left side surface of the at least one active fin protruding from the device isolation layer are at a substantially same height, and the at least one active fin is determined as asymmetrical when points of a right side surface and a left side surface of the at least one active fin protruding from the device isolation layer are at a different height.
2. The device of claim 1 , wherein the at least one active fin has a substantially same mean inclination between the left and right profiles in a connection portion connecting the lower active fin and the upper active fin when the at least one active fin is determined as symmetrical, and the at least one active fin has a different mean inclination between the left and right profiles in the connection portion connecting the lower active fin and the upper active fin when the at least one active fin is determined as asymmetrical, the mean inclination being measured with respect to the top surface of the semiconductor substrate.
3. The device of claim 1 , wherein the at least one active fin has a substantially same mean curvature between the left and right profiles in a connection portion connecting the lower active fin and the upper active fin when the at least one active fin is determined as symmetrical, and the at least one active fin has a different mean curvature between the left and right profiles in the connection portion connecting the lower active fin and the upper active fin when the at least one active fin is determined as asymmetrical.
4. The device of claim 1 , wherein, when the active fin unit comprises one active fin, the one active fin has a left profile and a right profile that are symmetric to each other about the center line.
5. A semiconductor device comprising:
a semiconductor substrate; and
an active fin unit protruding on the semiconductor substrate and extending along a first direction, the active fin unit comprising a plurality of active fins,
wherein each of the plurality of active fins comprises a lower active fin surrounded by a device isolation layer and an upper active fin protruding from the device isolation layer,
wherein, two outermost active fins of the plurality of active fins have a left profile and a right profile that are asymmetric to each other about a center line, and points of a right side surface and a left side surface of each of the two outermost active fins protruding from the device isolation layer are at a different height, and
wherein the center line is defined as a straight line disposed approximately equidistant between left and right points of the lower active fin, which are at a substantially same height above a top surface of the semiconductor substrate.
6. The device of claim 5 , wherein the active fin unit comprises the two outermost active fins, the device further comprising:
a first device isolation layer disposed between the two outermost active fins; and
second device isolation layers having a different structure from the first device isolation layer disposed on the left side of a left outermost active fin of the two outermost active fins and on the right side of a right outermost active fin of the two outermost active fins.
7. The device of claim 6 , wherein the first device isolation layer has a smaller width, as measured in a second direction, than each of the second device isolation layers.
8. The device of claim 5 , wherein when the active fin unit comprises at least three active fins, at least one active fin between the two outermost active fins has a left profile and a right profile that are symmetric to each other about the center line, and the at least one active fin between the two outermost active fins has a substantially same mean curvature between the left and right profiles in a bottom portion of the upper active fin.
9. The device of claim 5 , wherein each of the lower active fins of the two outermost active fins has a substantially same mean inclination between the left profile and the right profile, the mean inclination being measured with respect to the top surface of the semiconductor substrate.
10. The device of claim 5 , wherein each of the two outermost active fins has a different mean inclination between the left and right profiles in a connection portion connecting the lower active fin and the upper active fin, the mean inclination being measured with respect to the top surface of the semiconductor substrate.
11. The device of claim 5 , wherein each of the two outermost active fins has a different mean curvature between the left and right profiles in a connection portion connecting the lower active fin and the upper active fin.
12. The device of claim 11 , wherein each of the two outermost active fins has a different mean curvature between the left and right profiles in a bottom portion of the upper active fin.
13. The device of claim 5 , wherein each of the two outermost active fins has a different mean curvature between the left and right profiles in a bottom portion of the upper active fin.
14. The device of claim 5 , wherein the active fin unit comprises at least three active fins, and points of a right side surface and a left side surface of at least one active fin between the two outermost active fins protruding from the device isolation layer are at a substantially same height.
15. The device of claim 5 , wherein the active fin unit comprises at least three active fins, and at least one active fin between the two outermost active fins has a substantially same mean inclination between the left and right profiles in a connection portion connecting the lower active fin and the upper active fin, the mean inclination being measured with respect to the top surface of the semiconductor substrate.
16. The device of claim 5 , wherein the active fin unit comprises at least three active fins, and at least one active fin between the two outermost active fins has a substantially same mean curvature between the left and right profiles in a connection portion connecting the lower active fin and the upper active fin.
17. A semiconductor device comprising:
a semiconductor substrate; and
an active fin unit protruding on the semiconductor substrate and extending along a first direction, the active fin unit comprising a plurality of active fins,
wherein each of the plurality of active fins comprises a lower active fin surrounded by a device isolation layer and an upper active fin protruding from the device isolation layer,
wherein two outermost active fins of the plurality of active fins have a left profile and a right profile that are asymmetric to each other about a center line, and each of the two outermost active fins has a different mean curvature between the left and right profiles in a connection portion connecting the lower active fin and the upper active fin,
wherein the center line is defined as a straight line disposed approximately equidistant between left and right points of the lower active fin, which are at a substantially same height above a top surface of the semiconductor substrate.
18. The device of claim 17 , wherein each of the two outermost active fins has a different mean inclination between the left and right profiles in a connection portion connecting the lower active fin and the upper active fin, the mean inclination being measured with respect to the top surface of the semiconductor substrate.
19. The device of claim 18 , wherein points of a right side surface and a left side surface of each of the two outermost active fins protruding from the device isolation layer are at a different height.
20. The device of claim 17 , wherein the active fin unit comprises at least three active fins, and at least one active fin between the two outermost active fins has a substantially same mean curvature between the left and right profiles in a connection portion connecting the lower active fin and the upper active fin.