High-purity 1H-heptafluorocyclopentene
The present invention is a 1H-Heptafluorocyclopentene having a purity of 99.9 wt % or more and an organochlorine-based compound content of 350 ppm by weight or less. The present invention provides a high-purity 1H-Heptafluorocyclopentene that may be useful as a plasma reaction gas for semiconductors.
1. 1H-Heptafluorocyclopentene having a purity of 99.9 wt % or more, an organochlorine-based compound content of 338 ppm by weight or less, a nitrogen content of 100 ppm by volume or less, and an oxygen content of 50 ppm by volume or less.
2. The 1H-heptafluorocyclopentene according to claim 1 , the 1H-heptafluorocyclopentene being obtained by performing a step (I) that hydrogenates 1-chloroheptafluorocyclopentene through a gas phase reaction in the presence of a catalyst to obtain crude 1H-heptafluorocyclopentene, and a step (II) that purifies the crude 1H-heptafluorocyclopentene obtained by the step (I) using a rectifying column that has a number of theoretical plates of 50 or more.
3. The 1H-heptafluorocyclopentene according to claim 1 , wherein the organochlorine-based compound is either or both of chlorononafluorocyclopentane and chloroheptafluorocyclopentene.
4. The 1H-heptafluorocyclopentene according to claim 3 , the 1H-heptafluorocyclopentene having a water content of 20 ppm by weight or less.
5. A method for using the 1H-heptafluorocyclopentene according to claim 1 as a dry etching gas.
6. A method for using the 1H-heptafluorocyclopentene according to claim 1 as a plasma CVD reactive gas.
7. A container equipped with a valve that is filled with the 1H-heptafluorocyclopentene according to claim 4 .