Magnetic field detecting sensor and magnetic field detecting apparatus using the same
A magnetic field detecting sensor includes a bridge circuit which is connected to multiple magnetoresistive effect elements and is capable of outputting a differential voltage between specified connection points, a magnetic field generating conductor for providing the magnetoresistive effect elements with a magnetic field in a direction opposite to that of the detection magnetic field by disposing a magnetic body near the center of the bridge circuit, a differential operation circuit which the differential voltage is input in and makes a feedback current flow to the magnetic field generating conductor, wherein the feedback current generates the magnetic field in a direction opposite to that of the detection magnetic field in the magnetic field generating conductor, and a voltage converting circuit for outputting the feedback current as a voltage value. The magnetic field generating conductor and the magnetoresistive effect elements are formed in the same stacked body.
1. A magnetic field detecting sensor, comprising
a bridge circuit which includes multiple magnetoresistive effect elements whose resistance value changes in response to the direction of a detection magnetic field and is capable of outputting a differential voltage between specified connection points,
a magnetic body which collects the detection magnetic field and changes the direction of the detection magnetic field near the center of the bridge circuit,
a magnetic field generating conductor for providing the magnetoresistive effect elements with a magnetic field in a direction opposite to that of the detection magnetic field as changed by the magnetic body,
a differential operation circuit which the differential voltage of the bridge circuit is input in and makes a feedback current flow to the magnetic field generating conductor, wherein the feedback current generates the magnetic field in a direction opposite to that of the detection magnetic field in the magnetic field generating conductor, and
a voltage converting circuit for outputting the feedback current as a voltage value,
wherein the magnetic field generating conductor and the magnetoresistive effect elements are formed in the same stacked body.
2. The magnetic field detecting sensor of claim 1 , wherein,
the magnetic field generating conductor is disposed in a lower layer than the magnetoresistive effect elements in the stacked body.
3. The magnetic field detecting sensor of claim 1 , wherein,
the magnetic field generating conductor is formed by a film forming process.
4. A magnetic field detecting apparatus,
comprising the magnetic field detecting sensor of claim 1 ,
wherein the magnetic field detecting sensor detects an AC magnetic field component of the detection magnetic field.
5. The magnetic field detecting sensor of claim 2 , wherein,
the magnetic field generating conductor is formed by a film forming process.
6. A magnetic field detecting apparatus, comprising the magnetic field detecting sensor of claim 2 ,
wherein the magnetic field detecting sensor detects an AC magnetic field component of the detection magnetic field.
7. A magnetic field detecting apparatus, comprising the magnetic field detecting sensor of claim 3 ,
wherein the magnetic field detecting sensor detects an AC magnetic field component of the detection magnetic field.
8. A magnetic field detecting apparatus, comprising the magnetic field detecting sensor of claim 5 ,
wherein the magnetic field detecting sensor detects an AC magnetic field component of the detection magnetic field.
9. The magnetic field detecting sensor of claim 1 , wherein the bridge circuit includes four of the magnetoresistive effect elements.
10. The magnetic field detecting sensor of claim 1 , wherein the bridge circuit includes two arms, each of the arms including a plurality of the magnetoresistive effect elements.
11. The magnetic field detecting sensor of claim 1 , wherein the magnetic field generating conductor is spaced from the magnetoresistive effect elements on one side of the magnetoresistive effect elements.
12. The magnetic field detecting sensor of claim 1 , wherein the length of the magnetic body is longer than the length of the bridge circuit in at least one direction.