Air stable infrared photodetectors from solution-processed inorganic semiconductors

1. A photodetector, comprising:

a photoactive layer comprising semiconducting inorganic nanoparticles of a first size; a hole transport layer comprising a first metal oxide; and

an electron transport layer comprising nanoparticles of a second metal oxide having a second size that matches the first size,

wherein the semiconducting inorganic nanoparticles are responsive to electromagnetic radiation in at least the infrared region of the spectrum, wherein the photoactive layer is positioned between the hole transport layer and the electron transport layer, and is in direct contact with the electron transport layer, wherein the photodetector is stable in air in the absence of an external encapsulating coating.

2. The photodetector of claim 1 , wherein the photodetector has an external quantum efficiency having a relative standard deviation of less than about 5% over a period of at least about 120 days, wherein the photodetector is exposed to air during the period.

3. The photodetector of claim 1 , wherein the hole transport layer is a hole transport electron blocking layer.

4. The photodetector of claim 1 , wherein the electron transport layer is an electron transport hole blocking layer.

5. The photodetector of claim 1 , wherein the first metal oxide is NiO.

6. The photodetector of claim 1 , wherein the second metal oxide is ZnO.

7. The photodetector of claim 1 , wherein the second metal oxide is TiO 2 .

8. The photodetector of claim 1 , wherein the semiconducting inorganic nanoparticles comprise lead chalcogenides, alloys of lead chalcogenides, mercury chalcogenides, alloys of mercury chalcogenides, III-V semiconductors based on indium and/or gallium, silicon, or any combination thereof.

9. The photodetector of claim 1 , wherein the semiconducting inorganic nanoparticles comprise PbS or PbSe.

10. The photodetector of claim 9 , wherein the hole extraction layer comprises molybdenum oxide (MoO 3 ), tungsten oxide (WO 3 ), and/or vanadium oxide (V 2 O 5 ).

11. The photodetector of claim 1 , wherein the semiconducting inorganic nanoparticles are responsive to electromagnetic radiation in the visible and infrared regions of the electromagnetic spectrum.

12. The photodetector of claim 1 , further comprising a hole extraction layer.

13. The photodetector of claim 1 , further comprising an optical filter on a light incident face of the photodetector.

14. The photodetector of claim 13 , wherein the optical filter removes at least a portion of the electromagnetic radiation in the ultraviolet regions of the electromagnetic spectrum.

15. A method of preparing a photodetector comprising a photoactive layer comprising semiconducting inorganic nanoparticles, a hole transport layer comprising a first metal oxide, an electron transport layer comprising a second metal oxide, wherein the semiconducting inorganic nanoparticles are responsive to electromagnetic radiation in at least the infrared region of the spectrum, wherein the photoactive layer is positioned between the hole transport layer and the electron transport layer, and is in direct contact with the electron transport layer, wherein the photodetector is stable in air in the absence of an external encapsulating coating, the method comprising:

providing a substrate comprising an electrode;

depositing a first solution of a first metal oxide precursor or a first suspension of a plurality of metal oxide particles on the electrode;

removing the solvent from the first solution or first suspension to form a first layer comprising the first metal oxide;

depositing a colloidal suspension of semiconducting inorganic nanoparticles on the first layer;

removing the solvent from the colloidal suspension of semiconducting inorganic quantum dots to form a photoactive layer comprising semiconducting inorganic quantum dots;

depositing a second solution of a second metal oxide precursor or a second suspension of a plurality of metal oxide particles on the photoactive layer; and

removing the solvent from the second solution or second suspension to form a second layer comprising the second metal oxide.

16. The method of claim 15 , wherein the electrode is an anode, the first layer comprising a first metal oxide is a hole transport electron blocking layer, and the second layer comprising a second metal oxide is an electron transport hole blocking layer.

17. The method of claim 16 , wherein the hole transport electron blocking layer comprises NiO.

18. The method of claim 16 , wherein the electron transport hole blocking layer comprises ZnO and/or TiO 2 .

19. The method of claim 15 , wherein the electrode is a cathode, the first layer comprising a first metal oxide is an electron transport hole blocking layer, and the second layer comprising a second metal oxide is a hole transport electron blocking layer.

20. The method of claim 19 , wherein the hole transport electron blocking layer comprises NiO.

21. The method of claim 19 , wherein the electron transport hole blocking layer comprises ZnO and/or TiO 2 .

22. The method of claim 15 , further comprising the step of modifying the first layer comprising the first metal oxide, the second layer comprising the second metal oxide, and/or the photoactive layer chemically or thermally.

23. The method of claim 22 , wherein modifying the first layer comprising the first metal oxide, the second layer comprising the second metal oxide, and/or the photoactive layer chemically comprises ligand exchanging.

24. The method of claim 15 , wherein the method does not further include a step of encapsulating the photodetector.

25. The method of claim 15 , further comprising exposing the photodetector to air for a period of time, wherein the performance of the photodetector is stable during the period of time.

26. The method of claim 25 , wherein the period of time is at least about 120 days.

27. The method of claim 25 , wherein the photodetector has an external quantum efficiency having a relative standard deviation of less than about 5% during the period of time.