Method of manufacturing display device including light blocking portion on planarization layer protrusion
A display device comprising a first substrate and a second substrate opposing one another, a thin film transistor and a color filter disposed on the first substrate, a planarization layer disposed on the thin film transistor and the color filter and a light blocking portion disposed on the planarization layer, the light blocking portion defining a pixel area, wherein the planarization layer comprises a first protrusion and a second protrusion, wherein the first protrusion is disposed in an area in which the light blocking portion is disposed, wherein the second protrusion is spaced apart from the first second protrusion, and wherein the light blocking portion comprises a first light blocking pattern disposed on the first protrusion, and the first light blocking pattern contacts the second substrate.
1. A method of manufacturing a display device, the method comprising:
providing a first substrate;
disposing thin film transistors and color filters on the first substrate;
disposing a planarization layer on the thin film transistors and the color filters, the planarization layer comprising a first protrusion and a second protrusion;
disposing a light blocking portion on the planarization layer to define a pixel area;
disposing a liquid crystal layer on the first substrate; and
disposing a second substrate opposite to and spaced apart from the first substrate,
wherein the light blocking portion comprises a first light blocking pattern disposed on the first protrusion, and the first light blocking pattern contacts the second substrate, and
wherein the second protrusion contacts with the liquid crystal layer.
2. The method of claim 1 , wherein the first protrusion and the second protrusion of the planarization layer have a same height as one another measured from the planarization layer.
3. The method of claim 1 , wherein the disposing of the planarization layer comprises:
disposing a first photosensitive composition on the thin film transistors;
disposing a first exposure mask over the first photosensitive composition, and performing exposure by irradiating light to the first photosensitive composition; and
developing and curing the exposed first photosensitive composition to form the planarization layer.
4. The method of claim 3 , wherein the first exposure mask comprises a light-transmissive pattern, a semi-transmissive pattern, and a light blocking pattern.
5. The method of claim 4 , wherein the planarization layer is formed of a negative photosensitive composition, and
wherein the light-transmissive pattern corresponds to a region for the first protrusion and the second protrusion, and the light blocking pattern corresponds to a region for a contact hole.
6. The method of claim 1 , wherein the disposing of the light blocking portion comprises:
disposing a second photosensitive composition on the planarization layer;
disposing a second exposure mask over the second photosensitive composition, and performing exposure by irradiating light to the second photosensitive composition; and
developing and curing the exposed second photosensitive composition to form the light blocking portion.
7. The method of claim 6 , wherein the second exposure mask comprises a light-transmissive pattern, a semi-transmissive pattern, and a light blocking pattern.
8. The method of claim 7 , wherein the light blocking pattern of the second exposure mask corresponds to a region for the second protrusion.