Structure containing conductor circuit, method for manufacturing same, and heat-curable resin composition
A method for manufacturing a structure containing a conductor circuit according to the present invention can provide openings in various shapes by patterning a first photosensitive resin layer in a first patterning process according to shapes of openings formed in a heat-curable resin layer. Further, in the method for manufacturing a structure containing a conductor circuit, a plurality of openings can be formed at the same time and a residue of the resin around the opening can be reduced, unlike a case in which openings are formed with a laser. Therefore, it is possible to sufficiently efficiently manufacture the structure having excellent reliability even when the number of pins of a semiconductor element increases and it is necessary to provide a great number of fine openings.
1. A method for manufacturing a structure containing a conductor circuit on a surface of a support and a heat-curable resin layer as an insulating layer having at least one opening through which the conductor circuit is exposed so that a wiring portion may be formed in the opening connected to the conductor circuit, the method comprising:
a first photosensitive resin layer formation process for forming a first photosensitive resin layer to cover the conductor circuit;
a first patterning process for patterning the first photosensitive resin layer by performing an exposure process and a developing process on the first photosensitive resin layer;
a heat-curable resin layer formation process for forming a heat-curable resin layer on the support to cover the pattern of the first photosensitive resin layer;
a heat-curing process for heat-curing the heat-curable resin layer as a process immediately after the heat-curable resin layer formation process;
a pattern exposure process by performing plasma processing for removing a portion of the heat-curable resin layer to expose a predetermined place of the pattern of the first photosensitive resin layer from the heat-curable resin layer; and
an opening formation process by performing plasma processing for removing the first photosensitive resin layer exposed from the heat-curable resin layer to form an opening through the heat-curable resin layer exposing the conductor circuit.
2. The method for manufacturing a structure containing a conductor circuit according to claim 1 , wherein a temperature of the heat-curable resin layer ranges from 150° C. to 250° C. and a heating time ranges from 30 minutes to 300 minutes in the heat-curing process.
3. The method for manufacturing a structure containing a conductor circuit according to claim 1 , wherein the heat-curing process includes performing heat curing in an atmosphere of an inert gas.
4. The method for manufacturing a structure containing a conductor circuit according to claim 1 , further comprising:
a seed layer formation process for forming a seed layer which is a base of the wiring portion using an electroless plating method to cover at least a portion of the heat-curable resin layer after the opening is formed;
a second patterning process for forming a second photosensitive resin layer to cover the seed layer and then performing an exposure process and a developing process on the second photosensitive resin layer to pattern the second photosensitive resin layer to form a patterned second photosensitive resin layer;
a wiring portion patterning process for forming the wiring portion using an electrolytic plating method to cover at least a portion of the seed layer other than areas covered by the patterned second photosensitive resin layer and then peeling the patterned second photosensitive resin layer using a peeling process to pattern the wiring portion; and
a seed layer removal process for removing the seed layer in an area in which the wiring portion is not formed.
5. The method for manufacturing a structure containing a conductor circuit according to claim 1 , wherein a thickness T 1 of the first photosensitive resin layer ranges from 2 μm to 50 μm in the first photosensitive resin layer formation process.
6. The method for manufacturing a structure containing a conductor circuit according to claim 1 , wherein a thickness T 2 of the heat-curable resin layer ranges from 2 μm to 50 μm in the heat-curable resin layer formation process.
7. The method for manufacturing a structure containing a conductor circuit according to claim 1 , wherein a ratio (T 2 /T 1 ) of a thickness T 2 of the heat-curable resin layer to a thickness T 1 of the first photosensitive resin layer ranges from 1.0 to 2.0 in the heat-curable resin layer formation process.
8. The method for manufacturing a structure containing a conductor circuit according to claim 1 , wherein the opening formation process forms a plurality of openings through the heat-curable resin layer, and a ratio (D/R min ) of a depth D of the openings to a diameter R min of a smallest diameter opening among the openings formed in the heat-curable resin layer ranges from 0.1 to 1.0 in the opening formation process.
9. The method for manufacturing a structure containing a conductor circuit on a surface of a support and a heat-curable resin layer as an insulating layer having at least one opening through which the conductor circuit is exposed so that a wiring portion may be formed in the opening connected to the conductor circuit, the method comprising:
a first photosensitive resin layer formation process for forming a first photosensitive resin layer to cover the conductor circuit;
a first patterning process for patterning the first photosensitive resin layer by performing an exposure process and a developing process on the first photosensitive resin layer;
a heat-curable resin layer formation process for forming a heat-curable resin layer on the support to cover the pattern of the first photosensitive resin layer;
a pattern exposure process by performing plasma processing for removing a portion of the heat-curable resin layer to expose a predetermined place of the pattern of the first photosensitive resin layer from the heat-curable resin layer;
an opening formation process by performing plasma processing for removing the first photosensitive resin layer exposed from the heat-curable resin layer to form an opening exposing the conductor circuit; and
a heat-curing process for heat-curing the heat-curable resin layer as a process between the pattern exposure process and the opening formation process.
10. The method for manufacturing a structure containing a conductor circuit according to claim 9 , wherein a temperature of the heat-curable resin layer ranges from 150° C. to 250° C. and a heating time ranges from 30 minutes to 300 minutes in the heat-curing process.
11. The method for manufacturing a structure containing a conductor circuit according to claim 9 , wherein the heat-curing process includes performing heat curing in an atmosphere of an inert gas.
12. The method for manufacturing a structure containing a conductor circuit according to claim 9 , further comprising:
a seed layer formation process for forming a seed layer which is a base of the wiring portion using an electroless plating method to cover at least a portion of the heat-curable resin layer after the opening is formed;
a second patterning process for forming a second photosensitive resin layer to cover the seed layer and then performing an exposure process and a developing process on the second photosensitive resin layer to pattern the second photosensitive resin layer to form a patterned second photosensitive resin layer;
a wiring portion patterning process for forming the wiring portion using an electrolytic plating method to cover at least a portion of the seed layer other than areas covered by the patterned second photosensitive resin layer and then peeling the patterned second photosensitive resin layer using a peeling process to pattern the wiring portion; and
a seed layer removal process for removing the seed layer in an area in which the wiring portion is not formed.
13. The method for manufacturing a structure containing a conductor circuit according to claim 9 , wherein a thickness T 1 of the first photosensitive resin layer ranges from 2 μm to 50 μm in the first photosensitive resin layer formation process.
14. The method for manufacturing a structure containing a conductor circuit according to claim 9 , wherein a thickness T 2 of the heat-curable resin layer ranges from 2 μm to 50 μm in the heat-curable resin layer formation process.
15. The method for manufacturing a structure containing a conductor circuit according to claim 9 , wherein a ratio (T 2 /T 1 ) of a thickness T 2 of the heat-curable resin layer to a thickness T 1 of the first photosensitive resin layer ranges from 1.0 to 2.0 in the heat-curable resin layer formation process.
16. The method for manufacturing a structure containing a conductor circuit according to claim 9 , wherein the opening formation process forms a plurality of openings through the heat-curable resin layer, and a ratio (D/R min ) of a depth D of the openings to a diameter R min of a smallest diameter opening among the openings formed in the heat-curable resin layer ranges from 0.1 to 1.0 in the opening formation process.
17. The method for manufacturing a structure containing a conductor circuit on a surface of a support and a heat-curable resin layer as an insulating layer having at least one opening through which the conductor circuit is exposed so that a wiring portion may be formed in the opening connected to the conductor circuit, the method comprising:
a first photosensitive resin layer formation process for forming a first photosensitive resin layer to cover the conductor circuit;
a first patterning process for patterning the first photosensitive resin layer by performing an exposure process and a developing process on the first photosensitive resin layer;
a heat-curable resin layer formation process for forming a heat-curable resin layer on the support to cover the pattern of the first photosensitive resin layer;
a pattern exposure process by performing plasma processing for removing a portion of the heat-curable resin layer to expose a predetermined place of the pattern of the first photosensitive resin layer from the heat-curable resin layer;
an opening formation process by performing plasma processing for removing the first photosensitive resin layer exposed from the heat-curable resin layer to form an opening exposing the conductor circuit in the heat-curable resin layer; and
a heat-curing process for heat-curing the heat-curable resin layer as a process after the opening formation process.
18. The method for manufacturing a structure containing a conductor circuit according to claim 17 , wherein a temperature of the heat-curable resin layer ranges from 150° C. to 250° C. and a heating time ranges from 30 minutes to 300 minutes in the heat-curing process.
19. The method for manufacturing a structure containing a conductor circuit according to claim 17 , wherein the heat-curing process includes performing heat curing in an atmosphere of an inert gas.
20. The method for manufacturing a structure containing a conductor circuit according to claim 17 , further comprising:
a seed layer formation process for forming a seed layer which is a base of the wiring portion using an electroless plating method to cover at least a portion of the heat-curable resin layer after the opening is formed;
a second patterning process for forming a second photosensitive resin layer to cover the seed layer and then performing an exposure process and a developing process on the second photosensitive resin layer to pattern the second photosensitive resin layer to form a patterned second photosensitive resin layer;
a wiring portion patterning process for forming the wiring portion using an electrolytic plating method to cover at least a portion of the seed layer other than areas covered by the patterned second photosensitive resin layer and then peeling the patterned second photosensitive resin layer using a peeling process to pattern the wiring portion; and
a seed layer removal process for removing the seed layer in an area in which the wiring portion is not formed.
21. The method for manufacturing a structure containing a conductor circuit according to claim 17 , wherein a thickness T 1 of the first photosensitive resin layer ranges from 2 μm to 50 μm in the first photosensitive resin layer formation process.
22. The method for manufacturing a structure containing a conductor circuit according to claim 17 , wherein a thickness T 2 of the heat-curable resin layer ranges from 2 μm to 50 μm in the heat-curable resin layer formation process.
23. The method for manufacturing a structure containing a conductor circuit according to claim 17 , wherein a ratio (T 2 /T 1 ) of a thickness T 2 of the heat-curable resin layer to a thickness T 1 of the first photosensitive resin layer ranges from 1.0 to 2.0 in the heat-curable resin layer formation process.
24. The method for manufacturing a structure containing a conductor circuit according to claim 17 , wherein the opening formation process forms a plurality of openings through the heat-curable resin layer, and a ratio (D/R min ) of a depth D of the openings to a diameter R min of a smallest diameter opening among the openings formed in the heat-curable resin layer ranges from 0.1 to 1.0 in the opening formation process.