TCCT match circuit for plasma etch chambers

1. A match circuit for a plasma chamber, the match circuit comprising:

a power input circuit;

an inner coil input circuit coupled between the power input circuit and an input terminal of an inner coil, the inner coil input circuit including an inductor and a capacitor coupled in series to the inductor, the inductor connecting to the power input circuit, and the capacitor connecting to the input terminal of the inner coil, a first node being defined between the power input circuit and the inner coil input circuit;

an inner coil output circuit coupled between an output terminal of the inner coil and ground, the inner coil output circuit defining a direct pass-through connection that does not include an inductor or capacitor and is a direct connection to ground;

an outer coil input circuit coupled between the first node and an input terminal of an outer coil;

an outer coil output circuit coupled between an output terminal of the outer coil and ground, wherein the outer coil output circuit includes a second capacitor;

wherein the power input circuit includes a third capacitor coupled to an RF source, a second inductor coupled to the inner coil input circuit, a fourth capacitor coupled between the third capacitor and the second inductor, a second node being defined between the third capacitor and the fourth capacitor, and a fifth capacitor coupled between the second node and ground.

2. The match circuit of claim 1 , wherein the outer coil input circuit includes a sixth capacitor.

3. The match circuit of claim 1 , wherein the first node splits power from the power input circuit for distribution to the inner coil input circuit and the outer coil input circuit.

4. The match circuit of claim 1 , wherein the capacitor of the inner coil input circuit defines a first variable capacitor.

5. The match circuit of claim 4 , wherein the outer coil input circuit includes a second variable capacitor, the outer coil input circuit further coupled to the power input circuit via the first node.

6. The match circuit of claim 5 , wherein the first and second variable capacitors providing for tuning of a ratio of currents between the inner coil and the outer coil.

7. A plasma chamber, comprising:

a chuck configured to support a substrate for plasma processing;

a dielectric window disposed over the chuck;

a TCP coil disposed over the dielectric window, the TCP coil defined by an inner coil and an outer coil;

a match circuit, including,

a power input circuit;

an inner coil input circuit coupled between the power input circuit and an input terminal of the inner coil, the inner coil input circuit including an inductor and a capacitor coupled in series to the inductor, the inductor connecting to the power input circuit, and the capacitor connecting to the input terminal of the inner coil, a first node being defined between the power input circuit and the inner coil input circuit;

an inner coil output circuit coupled between an output terminal of the inner coil and ground, the inner coil output circuit defining a direct pass-through connection that does not include an inductor or capacitor and is a direct connection to ground;

an outer coil input circuit coupled between the first node and an input terminal of the outer coil;

an outer coil output circuit coupled between an output terminal of the outer coil and ground, wherein the outer coil output circuit includes a second capacitor;

wherein the power input circuit includes a third capacitor coupled to an RF source, a second inductor coupled to the inner coil input circuit, a fourth capacitor coupled between the third capacitor and the second inductor, a second node being defined between the third capacitor and the fourth capacitor, and a fifth capacitor coupled between the second node and ground.

8. The plasma chamber of claim 7 , wherein the outer coil input circuit includes a sixth capacitor.

9. The plasma chamber of claim 7 , wherein the first node splits power from the power input circuit for distribution to the inner coil input circuit and the outer coil input circuit.

10. The plasma chamber of claim 7 , wherein the capacitor of the inner coil input circuit defines a first variable capacitor.

11. The plasma chamber of claim 10 , wherein the outer coil input circuit includes a second variable capacitor, the outer coil input circuit further coupled to the power input circuit via the first node.

12. The plasma chamber of claim 11 , wherein the first and second variable capacitors providing for tuning of a ratio of currents between the inner coil and the outer coil.

13. The plasma chamber of claim 7 , further comprising:

a bias match circuit connected to the chuck.