Elevated photodiode with a stacked scheme
A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode.
1. A method of manufacturing a device, the method comprising:
forming a recess within a semiconductor substrate;
depositing a first electrode within the recess;
depositing a photoelectrical conversion layer within the recess; and
depositing a second electrode over the photoelectrical conversion layer, the second electrode being transparent and extending out of the recess.
2. The method of claim 1 , wherein the forming the recess forms the recess with dielectric sidewalls.
3. The method of claim 2 , wherein the dielectric sidewalls surround the recess.
4. The method of claim 1 , further comprising bonding the semiconductor substrate to a semiconductor wafer.
5. The method of claim 4 , wherein the semiconductor wafer comprises a read out circuit.
6. The method of claim 1 , further comprising forming a through via extending from a first side of the semiconductor substrate to a second side of the semiconductor substrate opposite the first side.
7. A method of manufacturing a device, the method comprising:
manufacturing an elevated photodiode adjacent to a first side of a first semiconductor substrate, wherein the manufacturing the elevated photodiode comprises forming a recess within the first semiconductor substrate;
manufacturing a metallization layer adjacent to a second side of the first semiconductor substrate;
manufacturing first external connections in electrical connection with the metallization layer; and
bonding the first external connections with second external connections, the second external connections being in electrical connection with a second semiconductor substrate.
8. The method of claim 7 , wherein the manufacturing the elevated photodiode further comprises:
depositing a first electrode within the recess;
depositing a photoelectric conversion layer within the recess and over the first electrode; and
depositing a second electrode in electrical connection with the photoelectric conversion layer.
9. The method of claim 8 , wherein the depositing the second electrode deposits the second electrode outside of the recess.
10. The method of claim 8 , wherein the forming the recess comprises at least in part a etching process.
11. The method of claim 7 , further comprising sawing the second semiconductor substrate after the bonding the first external connections with the second external connections.
12. The method of claim 7 , wherein the second semiconductor substrate comprises a read out circuit.
13. The method of claim 12 , wherein the read out circuit further comprises a correlated double sampling circuit.
14. A method of manufacturing a semiconductor device, the method comprising:
providing a first semiconductor die;
providing a second semiconductor die;
bonding the first semiconductor die to the second semiconductor die such that a pixel unit extends between the first semiconductor die and the second semiconductor die, the pixel unit comprising:
an elevated photodiode; and
read out circuitry.
15. The method of claim 14 , wherein the pixel unit comprises a transfer transistor located on the first semiconductor die and wherein the elevated photodiode is located on the first semiconductor die.
16. The method of claim 14 , further comprising a deep trench isolation structure located within the first semiconductor die, wherein the deep trench isolation structure comprises a plurality of rings, at least one of the plurality of rings encircling the pixel unit.
17. The method of claim 14 , wherein the bonding the first semiconductor die to the second semiconductor die further comprises bonding a first wafer to a second wafer.
18. The method of claim 14 , wherein the read out circuitry comprises an image signal processing circuit.
19. The method of claim 14 , wherein the pixel unit further comprises a dielectric material, the dielectric material having a first surface level with a surface of a photoelectrical conversion layer and a second surface level with a first electrode, wherein the photoelectrical conversion layer and the first electrode are portions of the elevated photodiode.
20. The method of claim 19 , wherein the elevated photodiode further comprises a second electrode, the second electrode in physical contact with a surface of the dielectric material.