Deep brain stimulation lead
The present disclosure discusses a system and methods for a deep brain stimulation lead. More particularly, the disclosure discusses a stimulation lead that includes one or more silicon based barrier layers within a MEMS film. The silicon based barrier layers can improve device reliability and durability. The silicon based barrier layers can also improve adhesion between the layers of the MEMS film.
1. A neurological lead, comprising:
a first polymeric layer;
a metal layer disposed on the first polymeric layer, the metal layer comprising:
a plurality of electrodes;
a plurality of periphery traces, each of the plurality of periphery traces at least partially encircling a perimeter of a respective one of the plurality of electrodes; and
at least two connection points coupling each of the plurality of periphery traces to a respective one of the plurality of electrodes; and
a second polymeric layer disposed on the plurality of periphery traces.
2. The neurological lead of claim 1 , comprising:
a plurality of traces, each of the plurality of traces coupling a respective one of the plurality of periphery traces to a respective one of a plurality of contact pads.
3. The neurological lead of claim 1 , comprising:
a planar formed, cylindrical film comprising a distal end and a proximal end.
4. The neurological lead of claim 3 , comprising:
a ribbon cable extending from the distal end of the planar formed, cylindrical film into a lumen defined by the planar formed, cylindrical film.
5. The neurological lead of claim 1 , comprising:
a second metal layer at least partially disposed over a surface of each of the plurality of electrodes.
6. The neurological lead of claim 5 , wherein the second metal layer comprises gold and the metal layer comprises at least one of one of platinum, iridium oxide, and titanium.
7. The neurological lead of claim 1 , comprising:
a first silicon based barrier layer at least partially disposed over the first polymeric layer; and
a second silicon based barrier layer at least partially disposed over the metal layer and the first silicon based barrier layer, the second silicon based barrier layer defining a first plurality of through-holes.
8. The neurological lead of claim 7 , wherein the first and second silicon based barrier layers comprise at least one of Silicon Nitride, Silicon Oxide, Silicon Carbide, Polysilicon, Amorphous-Silicon, Titanium Dioxide, and Titanium III Oxide.
9. The neurological lead of claim 1 , wherein the at least two connection points are coupled to opposite edges of the respective one of the plurality of electrodes.
10. The neurological lead of claim 1 , comprising:
a plurality of connection points coupled to an edge of the respective one of the plurality of electrodes.
11. A method, comprising:
disposing a metal layer on a first polymeric layer;
forming, in the metal layer, a plurality of electrodes, a plurality of periphery traces, wherein each of the plurality of periphery traces at least partially encircling a perimeter of a respective one of the plurality of electrodes, and at least two connection points coupling each of the plurality of periphery traces to a respective one of the plurality of electrodes; and
disposing a second polymeric layer on the plurality of periphery traces.
12. The method of claim 11 , comprising:
forming, in the metal layer, a plurality of traces, each of the plurality of traces coupling a respective one of the plurality of periphery traces to a respective one of a plurality of contact pads.
13. The method of claim 11 , comprising:
rolling a film comprising the first polymeric layer, the metal layer, and the second polymeric layer.
14. The method of claim 13 , comprising:
etching a ribbon cable in the film; and
extending the ribbon cable into a lumen defined by the rolled film.
15. The method of claim 11 , comprising:
disposing a second metal layer at least partially over a surface of each of the plurality of electrodes.
16. The method of claim 15 , wherein the second metal layer comprises gold and the metal layer comprises at least one of one of platinum, iridium oxide, and titanium.
17. The method of claim 11 , comprising:
disposing a first silicon based barrier layer at least partially over the first polymeric layer; and
disposing a second silicon based barrier layer at least partially over the metal layer and the first silicon based barrier layer, the second silicon based barrier layer defining a first plurality of through-holes.
18. The method of claim 17 , wherein the first and second silicon based barrier layers comprise at least one of Silicon Nitride, Silicon Oxide, Silicon Carbide, Polysilicon, Amorphous-Silicon, Titanium Dioxide, and Titanium III Oxide.
19. The method of claim 11 , wherein the at least two connection points are coupled to opposite edges of the respective one of the plurality of electrodes.