Semiconductor device and method for manufacturing the same
A semiconductor device includes a semiconductor substrate with a wiring layer formed thereon, an insulating film formed on the semiconductor substrate so as to cover the wiring layer and having a pad opening exposing a portion of the wiring layer as a pad, a front surface protection film formed on the insulating film and being constituted of an insulating material differing from the insulating film and having a second pad opening securing exposure of at least a portion of the pad, a seed layer formed on the pad, and a plating layer formed on the seed layer.
1. A semiconductor device comprising:
a semiconductor substrate with a wiring layer formed thereon;
an insulating film formed on the semiconductor substrate so as to cover the wiring layer and having a first pad opening exposing a portion of the wiring layer as a pad;
a front surface protection film formed on the insulating film and being constituted of an insulating material differing from the insulating film and having a second pad opening securing exposure of at least a portion of the pad;
a seed layer formed on the pad; and
a plating layer formed on the seed layer, wherein
the insulating film has a step portion based on a height difference due to a thickness of the wiring layer,
the front surface protection film is formed to decrease in thickness in a direction approaching the wiring layer in a region above the step portion, and has a flat surface in the region above the step portion.
2. The semiconductor device according to claim 1 , wherein an outer edge of the first pad opening and an outer edge of the second pad opening are matched at top and bottom corners respectively as seen in a vertical cross-sectional view.
3. The semiconductor device according to claim 1 , wherein an outer edge of the second pad opening is disposed further inward than an outer edge of the first pad opening so that a side surface of the first pad opening is covered by the front surface protection film.
4. The semiconductor device according to claim 3 , wherein the plating layer is disposed on a second pad peripheral edge portion, which is constituted of a portion of an upper surface of the front surface protection film.
5. The semiconductor device according to claim 3 , wherein the plating layer is disposed in an inner region of the second pad opening and across an interval from the outer edge of the second pad opening.
6. The semiconductor device according to claim 1 , wherein the plating layer is formed to a size fitting within an upper surface region of the wiring layer.
7. The semiconductor device according to claim 1 , wherein the wiring layer includes an Al wiring layer.
8. The semiconductor device according to claim 1 , wherein the insulating film includes a silicon nitride film and the front surface protection film includes a polyimide film.
9. The semiconductor device according to claim 1 , wherein the plating layer includes a laminated structure constituted of Ni and Pd on the Ni.
10. The semiconductor device according to claim 1 , further comprising a wire connected to the pad and constituted of a metal material containing Cu as a main component.
11. A semiconductor device, comprising:
a semiconductor substrate with a wiring layer formed thereon;
an insulating film formed on the semiconductor substrate so as to cover the wiring layer and having a first pad opening exposing a portion of the wiring layer as a pad;
a front surface protection film formed on the insulating film and being constituted of an insulating material differing from the insulating film and having a second pad opening securing exposure of at least a portion of the pad;
a seed layer formed on the pad; and
a plating layer formed on the seed layer, wherein
an outer edge of the second pad opening is disposed further outward than an outer edge of the first pad opening in a horizontal direction with respect to the first pad opening,
a pad peripheral edge portion, constituted of a portion of an upper surface of the insulating film, is exposed between the outer edge of the first pad opening and the outer edge of the second pad opening, and
the plating layer is disposed on a portion of the pad peripheral edge portion.
12. The semiconductor device according to claim 11 , wherein the plating layer is disposed in an inner region of the second pad opening and across an interval from the outer edge of the second pad opening.
13. The semiconductor device according to claim 11 , wherein the plating layer is disposed continuously on the pad peripheral edge portion and a second pad peripheral edge portion, which is constituted of a portion of an upper surface of the front surface protection film.