IP Library Granted Patent US 10,070,515
Granted Patent B2
US 10,070,515 · App. 15/175,510 · Granted Sep 4, 2018

Transparent electrode using amorphous alloy and method of manufacturing the same

Inventors: Eun-soo Park (Suwon-si, KR); Keum-hwan Park (Seoul, KR); Ju-Ho Lee (Hwaseong-si, KR); Jin-man Park (Seoul, KR); Young-soo Lee (Hwaseong-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H05K1/0274G09F9/301H01L31/022466H05K1/097H05K3/06H05K2201/0108H05K2201/026
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Quick Facts
Patent No.
US 10,070,515
App. No.
15/175,510
Granted
Sep 4, 2018
Kind
B2
Abstract

A transparent electrode using an amorphous alloy is provided. The transparent electrode includes a flexible substrate and an amorphous alloy layer configured to have conductivity and to be formed on the flexible substrate so as to have a plurality of voids.

Claims (15)

1. A transparent electrode comprising:

a flexible substrate; and

an electrically conductive amorphous alloy layer formed on the flexible substrate and having a plurality of voids,

wherein the amorphous alloy comprises a plurality of metal atoms that are disorderedly arranged, and

wherein the amorphous alloy has crystal grains each having a size smaller than or equal to one nanometer and an amorphous content exceeding fifty atomic percent.

2. The transparent electrode of claim 1 , wherein the amorphous alloy layer is formed of a plurality of amorphous alloy nano-wires.

3. The transparent electrode of claim 2 , wherein a diameter of each of the amorphous alloy nano-wires is greater than or equal to 10 nm and smaller than or equal to 500 nm.

4. The transparent electrode of claim 1 , wherein the amorphous alloy layer comprises a preset area formed in a plurality of protruding shapes.

5. The transparent electrode of claim 1 , wherein a thickness of the amorphous alloy layer is thicker than or equal to 5 nm and thinner than or equal to 10 pm.

6. The transparent electrode of claim 1 , wherein the flexible substrate is formed of at least one selected from thin glass, fiber-reinforced plastic (FRP), polyimide (PI), and polynorbornene (PNB).

7. The transparent electrode of claim 1 , wherein the amorphous alloy layer comprises a protection layer configured to be disposed in the plurality of voids.

8. The transparent electrode of claim 1 , wherein an amorphous alloy comprises at least one selected from iron (Fe), copper (Cu), zirconium (Zr), titanium (Ti), hafnium (Hf), zinc (Zn), aluminum (Al), sliver (Ag), and gold (Au).

9. The transparent electrode of claim 1 , wherein the amorphous alloy layer comprises an amorphous alloy complex that is formed through a reaction between an amorphous alloy and a nitrogen gas.

10. The transparent electrode of claim 1 , wherein the amorphous alloy layer comprises an amorphous alloy complex, the amorphous alloy complex comprising a crystalline phase present at a content of higher than or equal to 10 atomic percent (at. %) and lower than or equal to 90 atomic percent (at. %),

wherein a size of each of crystal grains of the crystalline phase is greater than or equal to 5 nm and smaller than or equal to 1000 nm.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 7, 2016
From: PARK, EUN-SOO; PARK, KEUM-HWAN; LEE, JU-HO; PARK, JIN-MAN; LEE, YOUNG-SOO
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 038904/0052 →
Priority Claims (1)
KR 10-2015-0112679 · Aug 10, 2015 · national
Continuity (1)
Related Publication 20170048972A1 · Feb 16, 2017