Simplified zener diode DC spice model

1. A device comprising:

a forward bias diode;

a reverse bias diode;

a first resistor;

a second resistor; and

a voltage source, wherein:

the forward bias diode and the first resistor are connected in series and form a first branch disposed between a positive terminal and a negative terminal, the first branch comprising a plurality of parameters including a tunneling emission coefficient, a tunneling saturation current, and a tunneling current temperature coefficient for modeling a reverse bias current before a breakdown point, and

the voltage source, the reverse bias diode and the second resistor are connected in series and form a second branch, the second branch being disposed between the positive terminal and the negative terminal and connected in parallel with the first branch.

2. The device of claim 1 , wherein the voltage source is a voltage-dependent voltage source.

3. The device of claim 2 , wherein the voltage dependent voltage source is modeled through a current source and a resistor connected in parallel.

4. The device of claim 3 , wherein a breakdown voltage of the voltage dependent voltage source is defined as VDVS, a current of the current source is defined as Ibv, a resistance value of the resistor is defined as Rbv, and VDVS, Ibv, and Rbv satisfy the relation:

VDVS =Ibv*Rbv.

5. The device of claim 3 , wherein the resistor is a temperature dependent resistor configured to model a temperature-dependent breakdown voltage.

6. The device of claim 1 , wherein the first branch is further configured to model a forward bias current before the breakdown point.

7. The device of claim 1 , wherein the second branch is configured to model a reverse bias current after the breakdown point.

8. The device of claim 1 , further comprising a switch configured to connect and disconnect the voltage source in the second branch.

9. A method for modeling a Zener diode, the method comprising:

providing a device comprising a forward bias diode, a reverse bias diode, a first resistor, a second resistor, and a voltage source, wherein the forward bias diode and the first resistor are connected in series and form a first branch disposed between a positive terminal and a negative terminal, the first branch comprising a plurality of parameters including a tunneling emission coefficient, a tunneling saturation current, and a tunneling current temperature coefficient for modeling a reverse bias current before a breakdown point, and the voltage source, the reverse bias diode and the second resistor are connected in series and form a second branch, the second branch is disposed between the positive terminal and the negative terminal and connected in parallel with the first branch; and

operating the device using the first branch to model a forward bias current and a reverse bias current before the breakdown point, and using the second branch to model a reverse bias current after the breakdown point.

10. The method of claim 9 , wherein the voltage source is a voltage-dependent voltage source.

11. The method of claim 10 , wherein the voltage dependent voltage source is modeled through a current source and a resistor connected in parallel.

12. The method of claim 11 , wherein a breakdown voltage of the voltage dependent voltage source is defined as VDVS, a current of the current source is defined as Ibv, a resistance value of the resistor is defined as Rbv, and VDVS, Ibv, and Rbv satisfy the relation:

VDVS =Ibv*Rbv.

13. The method of claim 11 , wherein the resistor is a temperature dependent resistor configured to model a temperature-dependent breakdown voltage.

14. The method of claim 9 , wherein the second branch is configured to model a reverse bias current after the breakdown point.