Interdigit device on leadframe for evenly distributed current flow
The disclosure is directed to techniques to evenly distribute current in interdigited leadframes by decoupling current between interdigited pads. The leadframe may use a perpendicular structure between the leadframe conductive pads and the lead traces. The perpendicular structure provides a short path for the current to travel from electrode pad openings on a device to the lead traces carrying current to other portions of a circuit. The conductive pad may be parallel to the electrode pad opening to lower spreading resistance. In an example of a transistor, the transistor may have two or more electrode pads for every current carrying node. Therefore, several electrode pads may have the same node, such as the source or drain of the device. For example, two or more source pads may be connected though the leadframe to evenly distribute the current and decouple the current from a single transistor.
1. A conductive leadframe device comprising:
a first plane of the leadframe device;
a plurality of parallel spaced and interleaved pads on the first plane of the leadframe device, wherein a respective pad of the plurality of pads defines a major axis of the respective pad,
a second plane of the leadframe device; and
a plurality of parallel conductors on the second plane of the leadframe device, wherein a respective conductor of the plurality of parallel conductors defines a major axis of the respective conductor,
wherein the major axis of each respective pad of the plurality of pads is on the first plane, and the major axis of each respective conductor of the plurality of conductors is on the second plane, and
wherein the major axis of the respective pad is substantially orthogonal to the major axis of the respective conductor at a location where the respective pad electrically connects to the respective conductor.
2. The conductive leadframe device of claim 1 , wherein the plurality of parallel spaced and interleaved pads is arranged in an interdigited pattern.
3. The conductive leadframe device of claim 1 , wherein the plurality of parallel spaced and interleaved pads correspond to a plurality of parallel spaced and interleaved electrode openings on the surface of a die.
4. The conductive leadframe device of claim 3 wherein the plurality of parallel spaced and interleaved electrode openings comprise a plurality of parallel spaced and interleaved source and drain electrode openings on the surface of the die and the plurality of parallel spaced and interleaved pads correspond to the plurality of parallel spaced and interleaved source and drain electrode openings on the surface of the die.
5. The conductive leadframe device of claim 3 , wherein a size and a shape of a respective pad of the plurality of parallel spaced and interleaved pads is substantially the same as a size and shape of the respective electrode opening that corresponds to the respective pad.
6. The conductive leadframe device of claim 1 , wherein
a major axis of a first respective pad is parallel and adjacent to a major axis of a second respective pad, and
the pitch distance between the major axis of a first respective pad and the major axis of a second respective pad is approximately 150 μm-400 μm.
7. The conductive leadframe device of claim 6 , wherein the pitch distance between the major axis of a first respective pad and the major axis of a second respective pad is less than the pitch distance between a first respective outer package pad and a second respective outer package pad.
8. The conductive leadframe device of claim 1 , wherein:
the respective pad defines a length and a width of the respective pad,
the length of the respective pad is longer than the width of the respective pad, and
the major axis of the respective pad is along the length of the pad.
9. The conductive leadframe device of claim 1 , wherein the leadframe device further comprises a conductive segment on the first plane of the leadframe device wherein the conductive segment electrically connects a first respective pad to at least a second respective pad.
10. The conductive leadframe device of claim 1 , wherein a perpendicular structure between the pads and the conductor at the location where the respective pad electrically connects to the respective conductor, forms a wing shape.
11. A device comprising:
a die, wherein the die includes a plurality of parallel spaced and interleaved electrode openings on a surface of the die; and
a conductive leadframe, the leadframe comprising:
a first plane of the leadframe;
a plurality of parallel spaced and interleaved pads on the first plane of the leadframe, wherein a respective pad of the plurality of pads defines a major axis of the respective pad,
a second plane of the leadframe; and
a plurality of parallel conductors on the second plane of the leadframe, wherein a respective conductor of the plurality of parallel conductors defines a major axis of the respective conductor,
wherein the major axis of each respective pad of the plurality of pads is on the first plane, and the major axis of each respective conductor of the plurality of conductors is on the second plane, and
wherein the major axis of the respective pad is substantially orthogonal to the major axis of the respective conductor at a location where the respective pad electrically connects to the respective conductor.
12. The device of claim 11 , wherein a respective pad of the plurality of parallel spaced and interleaved pads electrically connects to a respective electrode opening of the plurality of parallel spaced and interleaved electrode openings on the surface of the die.
13. The device of claim 12 , wherein the respective pad electrically connects to the respective electrode opening by means of a conductive adhesive.
14. The device of claim 11 , wherein the die includes a plurality of transistors configured as a half bridge circuit.
15. The device of claim 11 , wherein the die is a first die, the device further comprising a second die, wherein:
the first die is a first transistor and the second die is a second transistor, and
the first transistor and the second transistor are configured to form a half bridge circuit.
16. The device of claim 11 , wherein the die comprises a gallium nitride (GaN) semiconductor die.
17. The device of claim 11 , wherein the die comprises one or more of a field effect transistor (FET), a high-electron-mobility transistor (HEMT), or an insulated gate bipolar transistor (IGBT).
18. The device of claim 11 , further comprising a control integrated circuit (IC), wherein a terminal of the control IC electrically connects to a first pad of the plurality of parallel spaced and interleaved pads.
19. The device of claim 18 , wherein the terminal of the control IC is a first gate control terminal of the control IC and the first pad is a first gate terminal of the die.
20. A gallium nitride (GaN) semiconductor power device, the device comprising:
a GaN semiconductor die, wherein the semiconductor die includes a plurality of parallel spaced and interleaved source and drain electrode openings on a surface of the semiconductor die; and
a conductive leadframe comprising:
a first plane of the leadframe;
a plurality of parallel spaced and interleaved source pads and drain pads on the first plane of the leadframe, wherein a respective pad of the plurality of pads defines a major axis of the respective pad,
a second plane of the leadframe;
a plurality of parallel conductors on the second plane of the leadframe, wherein a respective conductor of the plurality of parallel conductors defines a major axis of the respective conductor,
wherein the major axis of each respective pad of the plurality of pads is on the first plane, and the major axis of each respective conductor of the plurality of conductors is on the second plane, and
wherein the major axis of the respective pad is substantially orthogonal to the major axis of the respective conductor at a location where the respective pad electrically connects to the respective conductor; and wherein:
a respective source pad of the plurality of parallel spaced and interleaved source pads electrically connects to a respective source electrode opening of the plurality of parallel spaced and interleaved source electrode openings on the surface of the die, and
a respective drain pad of the plurality of parallel spaced and interleaved drain pads electrically connects to a respective drain electrode opening of the plurality of parallel spaced and interleaved drain electrode openings on the surface of the die.