Atomic layer etching of silicon nitride
A method for selectively etching SiN with respect to SiO or SiGe or Si of a structure is provided comprising providing a plurality of cycles of atomic layer etching. Each cycle comprises a fluorinated polymer deposition phase comprising flowing a fluorinated polymer deposition gas comprising a hydrofluorocarbon gas into the plasma processing chamber, forming the fluorinated polymer deposition gas into a plasma, which deposits a hydrofluorocarbon polymer layer on the structure, and stopping the flow of the fluorinated polymer deposition gas into the plasma processing chamber and an activation phase comprising flowing an activation gas comprising at least one of NH 3 or H 2 into the plasma processing chamber, forming the activation gas into a plasma, wherein plasma components from NH 3 or H 2 cause SiN to be selectively etched with respect to SiO or SiGe or Si, and stopping the flow of the activation gas into the plasma processing chamber.
1. A method for selectively etching SiN with respect to SiO or SiGe or Si of a structure in a plasma processing chamber, comprising providing a plurality of cycles of atomic layer etching, wherein each cycle comprises:
a fluorinated polymer deposition phase, comprising:
flowing a fluorinated polymer deposition gas comprising a hydrofluorocarbon gas into the plasma processing chamber;
forming the fluorinated polymer deposition gas into a plasma, which deposits a hydrofluorocarbon polymer layer on the structure; and
stopping the flow of the fluorinated polymer deposition gas into the plasma processing chamber; and
an activation phase, comprising:
flowing an activation gas comprising at least one of NH 3 or H 2 into the plasma processing chamber;
forming the activation gas into a plasma, wherein plasma components from NH 3 or H 2 cause SiN to be selectively etched with respect to SiO or SiGe or Si; and
stopping the flow of the activation gas into the plasma processing chamber.
2. The method, as recited in claim 1 , wherein the activation gas comprises H 2 .
3. The method, as recited in claim 2 , wherein the activation gas is fluorine and inert bombardment gas free.
4. The method, as recited in claim 3 , further comprising a flashing phase after the activation phase, comprising:
flowing a flashing gas comprising H 2 and at least one of O 2 or CO 2 into the plasma processing chamber;
forming the flashing gas into a plasma, wherein the plasma strips polymer; and
stopping the flow of the flashing gas.
5. The method, as recited in claim 3 , wherein the fluorinated polymer deposition phase provides a bias voltage with a magnitude of between 30 to 300 volts and the activation phase provides a bias voltage with a magnitude of between 30 to 300 volts.
6. The method, as recited in claim 5 , wherein the hydrofluorocarbon gas comprises at least one of CH 3 F, CH 2 F 2 , or CHF 3 .
7. The method, as recited in claim 6 , wherein the fluorinated polymer deposition gas further comprises at least one of CH 4 or H 2 or Ar.
8. The method, as recited in claim 7 , the activation gas consists essentially of H 2 .
9. The method, as recited in claim 8 , wherein the activation phase is self limiting dependent on a thickness of fluorinated polymer deposited, since fluorine from the fluorinated polymer is used for etching during the activation phase.
10. The method, as recited in claim 1 , wherein the activation gas is fluorine and inert bombardment gas free.
11. The method, as recited in claim 1 , further comprising a flashing phase after the activation phase, comprising:
flowing a flashing gas comprising H 2 and at least one of O 2 or CO 2 into the plasma processing chamber;
forming the flashing gas into a plasma, wherein the plasma strips polymer; and
stopping the flow of the flashing gas.
12. The method, as recited in claim 1 , wherein the fluorinated polymer deposition phase provides a bias voltage with a magnitude of between 30 to 300 volts and the activation phase provides a bias voltage with a magnitude of between 30 to 300 volts.
13. The method, as recited in claim 1 , wherein the hydrofluorocarbon gas comprises at least one of CH 3 F, CH 2 F 2 , or CHF 3 .
14. The method, as recited in claim 1 , wherein the fluorinated polymer deposition gas further comprises at least one of CH 4 or H 2 or Ar.
15. The method, as recited in claim 1 , the activation gas consists essentially of H 2 .
16. The method, as recited in claim 1 , wherein the activation phase is self limiting dependent on a thickness of fluorinated polymer deposited, since fluorine from the fluorinated polymer is used for etching during the activation phase.