Data storage device with rewritable in-place memory
A data storage device can have at least a buffer memory, a selection module, and a non-volatile memory. The buffer memory and non-volatile memory may consist of different types of memory while the non-volatile memory has one or more rewritable in-place memory cells. The buffer memory and non-volatile memory may each store data associated with a pending data request as directed by the selection module until a settle time of the rewritable in-place memory cell has expired.
1. An apparatus comprising a data storage device having a buffer memory, a selection module, and a non-volatile memory, the buffer memory and non-volatile memory comprising different types of memory, the non-volatile memory comprising a rewritable in-place memory cell, the buffer memory and non-volatile memory each storing data associated with a pending data request as directed by the selection module until a settle time of the rewritable in-place memory cell has expired, the selection module configured to restrict access to at least one memory cell of the non-volatile memory that is physically proximal to a memory cell where the write data is written.
2. The apparatus of claim 1 , wherein the data storage device has a plurality of bit addressable memory cells.
3. The apparatus of claim 2 , wherein each memory cell of the plurality of bit addressable memory cells are positioned between a bit line and a word line.
4. The apparatus of claim 3 , wherein each bit line is oriented orthogonally to each word line.
5. The apparatus of claim 2 , wherein a first group of the plurality of bit addressable memory cells are vertically stacked atop a second group of the plurality of bit addressable memory cells.
6. The apparatus of claim 2 , wherein each memory cell of the plurality of bit addressable memory cells comprises a selection layer contacting a resistive unit.
7. The apparatus of claim 2 , wherein no memory cell of the plurality of bit addressable memory cells is attached to a transistor.
8. The apparatus of claim 1 , wherein the buffer memory is volatile.
9. A method comprising
activating a data storage device having a buffer memory, a selection module, and a non-volatile memory, the buffer memory and non-volatile memory comprising different types of memory, the non-volatile memory comprising a rewritable in-place memory cell;
receiving a write request from a remote host, the write request having write data associated with the write request;
writing the write data concurrently to the buffer memory and non-volatile memory as directed by the selection module;
servicing a first read request for the write data by retrieving data from the buffer memory;
delaying reading the write data from the non-volatile memory while a timer of the selection module is active, the timer corresponding to a settle time of the non-volatile memory;
restricting access with the selection module to at least one memory cell of the non-volatile memory that is physically proximal to a memory cell where the write data is written; and
servicing a second read request for the write data by retrieving data from the non-volatile memory after the timer expires.
10. The method of claim 9 , wherein the non-volatile memory is unstable during the settle time.
11. The method of claim 9 , wherein the settle time is predicted by a prediction circuit of the selection module.
12. The method of claim 11 , wherein the predicted settle time is different than a default settle time.
13. The method of claim 11 , wherein the predicted settle time accommodates an elevated temperature of the data storage device.
14. A method comprising
activating a data storage device having a buffer memory, a selection module, and a non-volatile memory, the buffer memory and non-volatile memory comprising different types of memory, the non-volatile memory comprising a rewritable in-place memory cell;
receiving a write request from a remote host, the write request having write data associated with the write request;
writing the write data concurrently to the buffer memory and non-volatile memory as directed by the selection module;
servicing a first read request for the write data by retrieving data from the buffer memory;
delaying reading the write data from the non-volatile memory while a timer of the selection module is active;
restricting access with the selection module to at least one memory cell of the non-volatile memory that is physically proximal to a memory cell where the write data is written;
servicing a second read request for the write data by retrieving data from the non-volatile memory after the timer expires; and
deleting the write data from the buffer memory responsive to the expiration of the timer.
15. The method of claim 14 , wherein the selection module writes an update to the write data in the buffer memory without writing to the non-volatile memory while the timer is active.
16. The method of claim 14 , wherein the selection module assess whether data is currently being written by flagging the write data in the buffer memory.
17. The method of claim 14 , wherein the selection module maps the write data in a first level map and a second level map.
18. The method of claim 17 , wherein the first level map is resident in the buffer memory and the second level map is resident in the non-volatile memory.
19. The method of claim 17 , wherein the selection module generates a shadow map stored in the buffer memory.