In—Ce—O-based sputtering target and method for producing the same
[Object] To provide: an In—Ce—O-based sputtering target capable of suppressing nodules and abnormal discharge over a long period, even though the Ce content based on an atomic ratio of Ce/(In+Ce) is 0.16 to 0.40, at which a high-refractive-index film can be obtained; and a method for producing the In—Ce—O-based sputtering target. [Solving Means] The sputtering target is an In—Ce—O-based sputtering target which is made of an In—Ce—O-based oxide sintered body containing indium oxide as a main component and cerium, and which is used in producing a transparent conductive film having a refractive index of 2.1 or more. The target is characterized in that the Ce content based on the atomic ratio of Ce/(In+Ce) is 0.16 to 0.40, and that cerium oxide particles having a particle diameter of 5 μm or less are dispersed in the In—Ce—O-based oxide sintered body.
1. An In—Ce—O-based sputtering target comprising an In—Ce—O-based oxide sintered body containing indium oxide as a main component and cerium,
wherein a Ce content of the In—Ce—O-based oxide sintered body based on an atomic ratio of Ce/(In+Ce) is 0.16 to 0.40, and
cerium oxide particles having a particle diameter of 5 μm or less are dispersed in the In—Ce—O-based oxide sintered body.
2. The In—Ce—O-based sputtering target according to claim 1 , wherein the In—Ce—O-based oxide sintered body has a relative density of 95% or more, and a specific resistance of from 7 mΩ·cm or more to 50 mΩ·cm or less.
3. A method for producing the In—Ce—O-based sputtering target according to claim 1 , wherein the production method comprises:
a cerium-oxide-powder grinding step of grinding a cerium oxide raw material powder by a wet grinding method until a 90% cumulative particle diameter (D90) determined from a particle size distribution reaches from 0.5 μm or more to 1.0 μm or less;
a mixture-powder-slurry grinding step of grinding a mixture powder slurry by the wet grinding method until a 90% cumulative particle diameter (D90) determined from a particle size distribution reaches from 0.7 μm or more to 1.0 μm or less, the mixture powder slurry obtained by mixing the ground cerium oxide powder with an indium oxide raw material powder;
a granulated-powder producing step of obtaining a granulated powder by adding an organic binder to the ground mixture powder slurry, followed by spray drying;
a compact producing step of obtaining a compact by press-molding the obtained granulated powder; and
a sintered-body producing step of obtaining an In—Ce—O-based oxide sintered body by sintering the obtained compact.
4. The method for producing the In—Ce—O-based sputtering target according to the claim 3 , wherein the 90% cumulative particle diameter (D90) of the cerium oxide powder determined from the particle size distribution in the cerium-oxide-powder grinding step satisfies 0.5 (μm)≤D90≤−1.5×A+1.15 (μm), where A represents the atomic ratio of Ce/(In+Ce), and wherein 0.16≤A≤0.40.
5. The In—Ce—O-based sputtering target according to claim 1 , wherein the cerium oxide particles dispersed in the In—Ce—O-based oxide sintered body have a particle diameter of 4 μm or less.
6. The In—Ce—O-based sputtering target according to claim 2 , wherein the cerium oxide particles dispersed in the In—Ce—O-based oxide sintered body have a particle diameter of 4 μm or less.