Radio-frequency localization techniques and associated systems, devices, and methods
A device comprising: a substrate; a semiconductor die mounted on the substrate; a transmit antenna fabricated on the substrate and configured to transmit radio-frequency (RF) signals at least at a first center frequency; a receive antenna fabricated on the substrate and configured to receive RF signals at least at a second center frequency different than the first center frequency; and circuitry integrated with the semiconductor die and configured to provide RF signals to the transmit antenna and to receive RF signals from the receive antenna.
1. A device comprising:
a substrate;
a semiconductor die mounted on the substrate;
a transmit antenna fabricated on the substrate and configured to transmit radio-frequency (RF) signals at least at a first center frequency;
a receive antenna fabricated on the substrate and configured to receive RF signals at least at a second center frequency that is a harmonic of the first center frequency; and
circuitry integrated with the semiconductor die mounted on the substrate and configured to provide RF signals to the transmit antenna and to receive RF signals from the receive antenna,
wherein the transmit antenna is configured to transmit a first RF signal having the first center frequency to a target device,
wherein the receive antenna is configured to receive a second RF signal having the second center frequency from the target device, and
wherein the circuitry is configured to generate, based on the first RF signal and the second RF signal, a third RF signal indicative of a time-of-flight between the device and the target device.
2. The device of claim 1 , wherein the semiconductor die is flip-chip bonded to the substrate.
3. The device of claim 2 , wherein the device is a packaged device comprising:
first level connections formed by flip-chip bonding the semiconductor die to the substrate;
second level connections configured to connect the packaged device to a printed circuit board; and
a protective encapsulation for at least the semiconductor die.
4. The device of claim 3 , wherein the second level connections comprise a ball grid array formed on the bottom surface of the substrate.
5. The device of claim 1 , wherein the substrate comprises a printed circuit board having at least one conductive layer, and wherein the transmit antenna and the receive antenna are fabricated on the substrate by patterning the at least one conductive layer.
6. The device of claim 5 , wherein at least one of the transmit antenna and the receive antenna are isotropic.
7. The device of claim 5 , wherein at least one of the transmit antenna and the receive antenna are directional.
8. The device of claim 1 ,
wherein the circuitry comprises a frequency mixer configured to generate the third RF signal using the first RF signal and the second RF signal.
9. The device of claim 1 , wherein the circuitry comprises a frequency multiplier for transforming received RF signals having the second center frequency to RF signals having the first center frequency.
10. The device of claim 1 , wherein the transmit antenna is configured to transmit microwave RF signals and the receive antenna is configured to receive microwave RF signals.
11. A device comprising:
a substrate;
a semiconductor die mounted on the substrate;
a transmit antenna fabricated on the substrate and configured to transmit radio-frequency (RF) signals circularly polarized in a first rotational direction;
a receive antenna fabricated on the substrate and configured to receive RF signals circularly polarized in a second rotational direction different from the first rotational direction; and
circuitry integrated with the semiconductor die mounted on the substrate and configured to provide RF signals to the transmit antenna and to receive RF signals from the receive antenna
wherein the transmit antenna is configured to transmit a first RF signal having the first center frequency to a target device,
wherein the receive antenna is configured to receive a second RF signal having the second center frequency from the target device, and
wherein the circuitry is configured to generate, based on the first RF signal and the second RF signal, a third RF signal indicative of a time-of-flight between the device and the target device.
12. The device of claim 11 , wherein the semiconductor die is flip-chip bonded to the substrate.
13. The device of claim 12 , wherein the device is a packaged device comprising:
first level connections formed by flip-chip bonding the semiconductor die to the substrate;
second level connections configured to connect the packaged device to a printed circuit board; and
a protective encapsulation for at least the semiconductor die.
14. The device of claim 13 , wherein the second level connections comprise a ball grid array formed on the bottom surface of the substrate.
15. The device of claim 11 , wherein the substrate comprises a printed circuit board having at least one conductive layer, and wherein the transmit antenna and the receive antenna are fabricated on the substrate by patterning the at least one conductive layer.
16. The device of claim 15 , wherein at least one of the transmit antenna and the receive antenna are isotropic.
17. The device of claim 15 , wherein at least one of the transmit antenna and the receive antenna are directional.
18. The device of claim 11 ,
wherein the circuitry comprises a frequency mixer configured to generate the third RF signal using the first RF signal and the second RF signal.
19. The device of claim 11 , wherein the transmit antenna is configured to transmit microwave RF signals and the receive antenna is configured to receive microwave RF signals.
20. A system, comprising:
an interrogator device, comprising:
a first substrate;
a first semiconductor die mounted on the first substrate;
a first transmit antenna fabricated on the first substrate and configured to transmit radio-frequency (RF) signals having a first center frequency to a target device;
a first receive antenna fabricated on the first substrate and configured to receive, from the target device, RF signals having a second center frequency that is a harmonic of the first center frequency; and
first circuitry integrated with the first semiconductor die mounted on the first substrate and configured to provide RF signals to the first transmit antenna and to receive RF signals from the first receive antenna; and
the target device, comprising:
a second substrate;
a second semiconductor die mounted on the second substrate;
a second receive antenna fabricated on the second substrate and configured to receive, from the interrogator device, RF signals having the first center frequency;
a second transmit antenna fabricated on the second substrate and configured to transmit, to the interrogator device, RF signals having the second center frequency; and
second circuitry integrated with the second semiconductor die mounted on the second substrate and configured to:
generate, from RF signals provided from the second receive antenna and having the first center frequency, RF signals having the second center frequency, and
provide the generated RF signals having the second center frequency to the second transmit antenna.