Liquid crystal display device including transistor which includes oxide semiconductor
View Patent ↗A liquid crystal display device is provided, which includes a transistor including an oxide semiconductor layer, a resin layer, a first electrode layer, a second electrode layer having an opening, and a liquid crystal layer. One of the first electrode layer and the second electrode layer is a pixel electrode layer which is electrically connected to the transistor, and the other of the first electrode layer and the second electrode layer is a common electrode layer. The liquid crystal display device is configured to display an image by a lateral electric field mode.
1. A liquid crystal display device comprising:
a transistor over a substrate, the transistor comprising:
a gate electrode comprising a copper layer;
a first oxide semiconductor layer over the gate electrode, the first oxide semiconductor layer comprising indium, gallium, and zinc;
a second oxide semiconductor layer over the first oxide semiconductor layer; and
a source electrode layer and a drain electrode layer electrically connected to the first oxide semiconductor layer;
a first insulating film over the transistor, the first insulating film comprising a first opening;
a resin layer over the transistor, the resin layer comprising a second opening;
a first electrode layer over the resin layer, the first electrode layer being directly in contact with one of the source electrode layer and the drain electrode layer through the first opening and the second opening, and the first electrode layer not comprising a slit;
a second insulating film over the first electrode layer;
a second electrode layer over the second insulating film, the second electrode layer comprising a slit; and
a liquid crystal layer,
wherein the first oxide semiconductor layer comprises a depressed portion between the source electrode layer and the drain electrode layer,
wherein one of the first electrode layer and the second electrode layer is a pixel electrode layer which is electrically connected to the transistor, and the other of the first electrode layer and the second electrode layer is a common electrode layer, and
wherein the liquid crystal display device is configured to display an image by a lateral electric field mode.
2. The liquid crystal display device according to claim 1 , wherein the gate electrode further comprises a titanium layer overlapping with the copper layer.
3. The liquid crystal display device according to claim 1 , wherein the first electrode layer is positioned between the substrate and the second electrode layer.
4. The liquid crystal display device according to claim 1 , wherein the first electrode layer and the second electrode layer comprise a same material.
5. The liquid crystal display device according to claim 1 , wherein the lateral electric field mode is an FFS mode.
6. The liquid crystal display device according to claim 1 ,
wherein the resin layer is a light-transmitting chromatic-color resin layer, and
wherein the light-transmitting chromatic-color resin layer is overlapped with the pixel electrode layer and the first oxide semiconductor layer.
7. The liquid crystal display device according to claim 1 , wherein the transistor further comprises a gate insulating film between the gate electrode and the first oxide semiconductor layer.