Method of forming a barrier layer for through via applications
Embodiments of the disclosure generally relate to a method of improving quality of a barrier layer suitable for forming high aspect ratio through substrate vias. In one example, a method for depositing a barrier layer includes depositing a barrier layer in a hole formed in a substrate, exposing the deposited barrier layer to a processing gas at a pressure greater than about 2 bars, and, maintaining a temperature of the substrate between about 150 degrees and about 700 degrees Celsius while in the presence of the processing gas.
1. A method for depositing a barrier layer, the method comprising:
depositing a barrier layer in a hole formed in a substrate, wherein the hole has an aspect ratio of at least 10:1;
exposing the deposited barrier layer to a processing gas at a pressure greater than about 2 bars; and
annealing the deposited barrier layer by maintaining a temperature of the substrate between about 150 degrees and about 700 degrees Celsius while in the presence of the processing gas, wherein the annealing replaces oxygen atoms having a first isotope in the deposited barrier layer with oxygen atoms having a second isotope that is higher than the first isotope to densify the deposited barrier layer.
2. The method of claim 1 , wherein exposing the deposited barrier layer to the processing gas further comprises:
exposing the deposited barrier layer to the processing gas at a pressure greater than about 5 bars.
3. The method of claim 1 , wherein exposing the deposited barrier layer to the processing gas further comprises:
exposing the deposited barrier layer to the processing gas at a pressure between about 5 to about 60 bars.
4. The method of claim 1 , wherein maintaining the temperature of the substrate further comprises:
maintaining the temperature of the substrate between 150 and about 600 degrees Celsius.
5. The method of claim 1 , wherein depositing the barrier layer further comprises:
depositing at least one of metallic oxide, metallic nitride, and metallic oxynitride.
6. The method of claim 1 , wherein depositing the barrier layer further comprises:
depositing at least one of SiO 2 , HfO 2 , TiO 2 , Ta 2 O 5 , Al 2 O 3 , BaTiO 3 , BaSrTiO 3 , PbZrTiO 3 , and BaPbZrTiO 3 .
7. The method of claim 1 , wherein depositing the barrier layer further comprises:
depositing at least one of SiN, SiC, SiO x N y , SiC:H, S—C—H film, Si—N—H, Si—O—H, Si—C—N—H, Si—O—C—H, and Si—O—N—H.
8. The method of claim 1 , wherein exposing the deposited barrier layer to the processing gas further comprises:
exposing the deposited barrier layer to steam.
9. The method of claim 1 , wherein exposing the deposited barrier layer to the processing gas further comprises:
exposing the deposited barrier layer to at least one of ozone, oxygen, water vapor, heavy water, a peroxide, and hydroxide-containing compound.
10. A method of forming a through substrate via, the method comprising:
depositing a barrier layer in a hole formed in a feature side of a substrate, the feature side opposite a backside of the substrate, wherein the hole comprises an aspect ratio of at least 10:1;
annealing the deposited barrier layer by:
exposing the deposited barrier layer to a processing gas at a pressure greater than about 2 bars; and
maintaining a temperature of the substrate between about 150 degrees and about 700 degrees Celsius while in the presence of the processing gas, wherein the annealing replaces oxygen atoms having a first isotope in the deposited barrier layer with oxygen atoms having a second isotope that is higher than the first isotope to densify the deposited barrier layer;
filling the hole with a conductive material on top of the barrier layer; and
thinning the substrate from the backside to expose the conductive material.
11. The method of claim 10 , wherein exposing the deposited barrier layer to the processing gas further comprises:
exposing the deposited barrier layer to the processing gas at a pressure greater than about 5 bars.
12. The method of claim 10 , wherein exposing the deposited barrier layer to the processing gas further comprises:
exposing the deposited barrier layer to the processing gas at a pressure between about 5 to about 60 bars.
13. The method of claim 10 , wherein maintaining the temperature of the substrate further comprises:
maintaining the temperature of the substrate between 150 and about 600 degrees Celsius.
14. The method of claim 10 , wherein depositing the barrier layer further comprises:
depositing at least one of metallic oxide, metallic nitride, and metallic oxynitride.
15. The method of claim 10 , wherein depositing the barrier layer further comprises:
depositing at least one of SiO 2 , HfO 2 , TiO 2 , Ta 2 O 5 , Al 2 O 3 , BaTiO 3 , BaSrTiO 3 , PbZrTiO 3 , and BaPbZrTiO 3 .
16. The method of claim 10 , wherein depositing the barrier layer further comprises:
depositing at least one of SiN, SiC, SiO x N y , SiC:H, S—C—H film, Si—N—H, Si—O—H, Si—C—N—H, Si—O—C—H, and Si—O—N—H.
17. The method of claim 10 , wherein exposing the deposited barrier layer to the processing gas further comprises:
exposing the deposited barrier layer to steam.
18. The method of claim 10 , wherein exposing the deposited barrier layer to the processing gas further comprises:
exposing the deposited barrier layer to at least one of ozone, oxygen, water vapor, heavy water, a peroxide, and hydroxide-containing compound.