IP Library Granted Patent US 10,109,552
Granted Patent B2
US 10,109,552 · App. 15/504,240 · Granted Oct 23, 2018

High frequency module

Inventors: Kenji Harauchi (Chiyoda-ku, JP); Fuminori Sameshima (Chiyoda-ku, JP); Jun Nishihara (Chiyoda-ku, JP); Yoshinori Tsuyama (Chiyoda-ku, JP)
Assignee: Mitsubishi Electric Corporation
H01L23/367H01L21/486H01Q9/285H05K1/0206H01L2924/1423
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Quick Facts
Patent No.
US 10,109,552
App. No.
15/504,240
Granted
Oct 23, 2018
Kind
B2
Abstract

A high frequency module improved in heat dissipation performance includes: a dielectric multilayer substrate including a ground layer and a high frequency electronic component mounted thereon while being in contact with the ground layer, the high frequency electronic component including a heat generating portion; and a cutoff block formed of an upstanding wall portion and a cover portion covering the upstanding wall portion, the cutoff block housing the high frequency electronic component and including a hollow portion having a cutoff characteristic at a frequency of a high frequency signal used by the high frequency electronic component, and the upstanding wall portion of the cutoff block being in contact with the ground layer of the dielectric multilayer substrate.

Claims (28)

1. A high frequency module comprising:

a dielectric multilayer substrate including a ground layer and a high frequency integrated circuit mounted thereon while being in contact with the ground layer, the high frequency integrated circuit being a heat generating element; and

a cutoff block formed of an upstanding wall portion that contacts the ground layer of the dielectric multilayer substrate and a cover portion that covers the upstanding wall portion, the cutoff block housing the high frequency integrated circuit, including a hollow portion having a cutoff characteristic at a frequency of a high frequency signal used by the high frequency integrated circuit, and configured to dissipate heat generated in the high frequency integrated circuit and transferred through the ground layer;

the dielectric multilayer substrate including:

a first surface on which the high frequency integrated circuit, a coaxial connector, and the cutoff block are mounted, and

a second surface on which an antenna element formed of a planar antenna is provided, the antenna element configured to dissipate heat generated in the high frequency integrated circuit and transferred through the dielectric multilayer substrate,

wherein a zero point of electric field strength of the antenna element is connected to the ground layer.

2. The high frequency module according to claim 1 , wherein a part of the ground layer is a metal core, on which the high frequency integrated circuit is mounted while being in contact with the metal core.

3. The high frequency module according to claim 1 , wherein

a plurality of the ground layers are formed to extend over a dielectric layer of the dielectric multilayer substrate, and

the plurality of the ground layers formed to extend over the dielectric layer are connected to conductive ground vias, respectively, formed in the dielectric layer.

4. The high frequency module according to claim 3 , wherein a plurality of the ground vias are provided around the high frequency integrated circuit.

5. The high frequency module according to claim 1 , wherein a radiation fin is vertically arranged on the cover portion of the cutoff block.

6. The high frequency module according to claim 1 , wherein a heat dissipation pipe is installed inside the cutoff block.

7. A high frequency module comprising:

a dielectric multilayer substrate including a ground layer and a high frequency integrated circuit mounted thereon while being in contact with the ground layer, the high frequency integrated circuit being a heat generating element; and

a cutoff block formed of an upstanding wall portion that contacts the ground layer of the dielectric multilayer substrate and a cover portion that covers the upstanding wall portion, the cutoff block housing the high frequency integrated circuit and including a hollow portion having a cutoff characteristic at a frequency of a high frequency signal used by the high frequency integrated circuit;

the dielectric multilayer substrate including:

a first surface on which the high frequency integrated circuit and the cutoff block are mounted, and

a second surface on which an antenna element connected to the high frequency integrated circuit is provided; and

the antenna element being a planar antenna, and a zero point of electric field strength of the antenna element being connected to the ground layer.

8. The high frequency module according to claim 7 , wherein a part of the ground layer is a metal core, on which the high frequency integrated circuit is mounted while being in contact with the metal core.

9. The high frequency module according to claim 7 , wherein

a plurality of the ground layers are formed to extend over a dielectric layer of the dielectric multilayer substrate, and

the plurality of the ground layers formed to extend over the dielectric layer are connected to conductive ground vias, respectively, formed in the dielectric layer.

10. The high frequency module according to claim 9 , wherein a plurality of the ground vias are provided around the high frequency integrated circuit.

11. The high frequency module according to claim 7 , wherein a radiation fin is vertically arranged on the cover portion of the cutoff block.

12. The high frequency module according to claim 7 , wherein a heat dissipation pipe is installed inside the cutoff block.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 15, 2017
From: HARAUCHI, KENJI; SAMESHIMA, FUMINORI; NISHIHARA, JUN; TSUYAMA, YOSHINORI
To: MITSUBISHI ELECTRIC CORPORATION
Reel/Frame 041265/0541 →
Priority Claims (1)
JP 2014-171058 · Aug 26, 2014 · national
Continuity (1)
Related Publication 20170250120A1 · Aug 31, 2017