IP Library Granted Patent US 10,109,596
Granted Patent B2
US 10,109,596 · App. 15/451,315 · Granted Oct 23, 2018

Semiconductor device and method of manufacturing the same

Inventor: Satoru Takaku (Yokohama Kanagawa, JP)
Assignee: TOSHIBA MEMORY CORPORATION
H01L23/552H01L21/56H01L21/78H01L23/13H01L23/295H01L23/3121H01L24/32H01L24/48H01L24/73H01L24/83H01L43/02H01L43/08H01L2224/32245H01L2224/48091H01L2224/48106H01L2224/48245H01L2224/73265H01L2224/83192H01L2225/0651H01L2924/1443
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,109,596
App. No.
15/451,315
Granted
Oct 23, 2018
Kind
B2
Abstract

A method of manufacturing a semiconductor device includes: providing, on a substrate, a first magnetic substrate including a base, a first side wall portion and a second side wall portion at opposed ends of the base, the sidewall portions extending from the base, providing a semiconductor chip over the base at a location between the first side wall portion and the second side wall portion, providing a plate-like magnetic substrate having a second surface, the second surface provided with a resin thereon, and positioning the plate-like magnetic substrate having a second surface with the resin thereon such that the second surface faces the base of the first magnetic substrate. Then the plate like magnetic substrate is moved in the direction of the first magnetic substrate to contact the second surface of the plate like magnetic substrate with the first side wall portion and the second side wall portion.

Claims (18)

1. A semiconductor device, comprising:

a substrate;

a first magnetic substrate comprising a base, a first side wall portion, and a second side wall portion, the first and second side wall portions extending in a first direction from the base, the base having a first end and a second end along a second direction perpendicular to the first direction, the first and the second side wall portions being at the first and second ends of base, respectively;

a semiconductor chip located above the base of the first magnetic substrate in the first direction and between the first and second side wall portions in the second direction and no portions of the first magnetic substrate being disposed on either side of the semiconductor chip in a third direction orthogonal to the first and second directions;

a second magnetic substrate above the first magnetic substrate in the first direction and in direct contact with an upper end of the first side wall portion and an upper end of the second side wall portion;

a wire connecting the semiconductor chip and the substrate; and

a sealing material between the second magnetic substrate and the semiconductor chip, between the first and second side wall portions in the second direction, and between the second magnetic substrate and the substrate at a position beyond the first end of the first magnetic substrate in the second direction, the sealing material sealing the semiconductor chip and the wire.

2. The semiconductor device according to claim 1 , wherein the sealing material includes a resin.

3. The semiconductor device according to claim 1 , further comprising a first adhesive extending between the semiconductor chip and the first magnetic substrate.

4. The semiconductor device according to claim 3 , wherein the height of the first side wall portion and the second side wall portion extending from the base of the first magnetic substrate is greater than the thickness of the semiconductor chip and the first adhesive.

5. The semiconductor device according to claim 1 , wherein

the sealing material contacts the first and the second side wall portions, the base of the first magnetic substrate, and a surface of the second magnetic substrate facing the base of the first magnetic substrate.

6. The semiconductor device according to claim 1 , wherein the first and the second magnetic substrate form a magnetic element extending around the semiconductor chip.

7. The semiconductor device according to claim 1 , wherein the first magnetic substrate is U-shaped.

8. The semiconductor device according to claim 1 , wherein

the first magnetic substrate is a bent metal plate,

the first and second side wall portions are continuous over a length of the base in the third direction.

9. The semiconductor device according to claim 1 , wherein the semiconductor chip as first end face facing the first end of the first magnetic substrate in the second direction, a second end face facing the second end of the first magnetic substrate in the second direction, and a third end face between the first end face and the second end face in the second direction, the third end face facing no magnetic material in the third direction.

Assignments (5)
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 14, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043194/0647 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 4, 2017
From: TAKAKU, SATORU
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 041845/0960 →
Priority Claims (1)
JP 2016-065743 · Mar 29, 2016 · national
Continuity (1)
Related Publication 20170287849A1 · Oct 5, 2017
Cited By (1)
US 12,581,865