Semiconductor arrangement, method of manufacturing the same electronic device including the same
There are provided a semiconductor arrangement, a method of manufacturing the same, and an electronic device including the semiconductor arrangement. According to an embodiment, the semiconductor arrangement may include a first semiconductor device and a second semiconductor device stacked in sequence on a substrate. Each of the first semiconductor device and the second semiconductor device may include a first source/drain layer, a channel layer and a second source/drain layer stacked in sequence, and a gate stack surrounding a periphery of the channel layer. The channel layer may comprise a semiconductor material different from that of the first source/drain layer and from that of the second source/drain layer.
1. A semiconductor arrangement, comprising a first semiconductor device and a second semiconductor device stacked in sequence on a substrate, wherein each of the first semiconductor device and the second semiconductor device comprises:
a first source/drain layer, a channel layer and a second source/drain layer stacked in sequence, wherein the channel layer comprises a semiconductor material different from that of the first source/drain layer and from that of the second source/drain layer; and
a gate stack surrounding a periphery of the channel layer.
2. The semiconductor arrangement of claim 1 , wherein the channel layer has its periphery recessed with respect to that of the first source/drain layer and to that of the second source/drain layer.
3. The semiconductor arrangement of claim 2 , wherein the second source/drain layer of the first semiconductor device is contiguous to the first source/drain layer of the second semiconductor device.
4. The semiconductor arrangement of claim 3 , wherein the second source/drain layer of the first semiconductor device is integral with the first source/drain layer of the second semiconductor device.
5. The semiconductor arrangement of claim 1 , wherein the channel layer comprises a single-crystalline semiconductor material.
6. The semiconductor arrangement of claim 3 , further comprising:
an electrical contact layer electrically connected to the second source/drain layer of the first semiconductor device and the first source/drain layer of the second semiconductor device.
7. The semiconductor arrangement of claim 6 , wherein the electrical contact layer surrounds a periphery of the second source/drain layer of the first semiconductor device and the first source/drain layer of the second semiconductor device.
8. The semiconductor arrangement of claim 6 , wherein
the gate stack of the first semiconductor device has a laterally extending portion which laterally extends outwards from a corresponding recess,
the electrical contact layer has a laterally extending portion which laterally protrudes with respect to the remaining portion thereof,
the gate stack of the second semiconductor device has a laterally extending portion which laterally extends outwards from a corresponding recess,
wherein at least some of the laterally extending portion of the gate stack of the first semiconductor device, the laterally extending portion of the electrical contact layer, and the laterally extending portion of the gate stack of the second semiconductor device extend laterally in different directions.
9. The semiconductor arrangement of claim 8 , wherein if some of the laterally extending portion of the gate stack of the first semiconductor device, the laterally extending portion of the electrical contact layer, and the laterally extending portion of the gate stack of the second semiconductor device overlap with each other in a vertical direction, then among those laterally extending portions that overlap with each other, a lower one protrudes with respect to an upper one.
10. The semiconductor arrangement of claim 4 , wherein
the first source/drain layer of the first semiconductor device is a semiconductor layer epitaxially grown on the substrate, and the channel layer of the first semiconductor device is a semiconductor layer epitaxially grown on the first source/drain layer of the first semiconductor device,
both the second source/drain layer of the first semiconductor device and the first source/drain layer of the second semiconductor device are a semiconductor layer epitaxially grown on the channel layer of the first semiconductor device,
the channel layer of the second semiconductor device is a semiconductor layer epitaxially grown on the first source/drain layer of the second semiconductor device, and the second source/drain layer of the second semiconductor device is a semiconductor layer epitaxially grown on the channel layer of the second semiconductor device.
11. The semiconductor arrangement of claim 1 , wherein the gate stack of the first semiconductor device comprises a different stack configuration from the gate stack of the second semiconductor device.
12. An electronic device comprising an Integrated Circuit (IC) comprising the semiconductor arrangement according to claim 1 .
13. The electronic device according to claim 12 , further comprising a display operatively coupled to the IC and a wireless transceiver operatively coupled to the IC.
14. The electronic device according to claim 12 , wherein the electronic device comprises a smart phone, a computer, a tablet computer, a wearable smart device, or a mobile power supply.