IP Library Granted Patent US 10,128,821
Granted Patent B2
US 10,128,821 · App. 15/351,542 · Granted Nov 13, 2018

Low output impedance, high speed and high voltage generator for use in driving a capacitive load

Inventor: Pavan Nallamothu (Little Elm, TX)
Assignee: STMicroelectronics, Inc.
H03K3/012G05F1/575H03K17/687
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Quick Facts
Patent No.
US 10,128,821
App. No.
15/351,542
Granted
Nov 13, 2018
Kind
B2
Abstract

A voltage generator circuit uses a feedback loop to regulate an output voltage at an output node. A pair of opposite conductivity source-follower transistors are coupled to the output node. A first one of the source-follower transistors operates to provide a fast current transient for charging a capacitive load that is switchably connected to the output node. A second one of the source-follower transistor operate under feedback control to regulate the voltage level at the output node.

Claims (39)

1. A voltage generator circuit, comprising:

a differential amplifier having a first input receiving a reference voltage and a second input receiving a feedback voltage;

a first transistor of a first conductivity type having a gate terminal coupled to an output of the differential amplifier and having a drain terminal;

a second transistor of a second conductivity type configured as a source-follower with a gate terminal coupled to the drain terminal of the first transistor and a source terminal coupled to a voltage output node;

a third transistor of the first conductivity type configured as a source-follower with a gate terminal coupled to a bias current node and a source terminal coupled to said voltage output node; and

a bias circuit configured to generate a bias current for application to said bias current node.

2. The voltage generator circuit of claim 1 , further comprising:

a fourth transistor of the second conductivity type configured as a diode-connected device with a gate terminal and drain terminal coupled to the drain terminal of the first transistor; and

a fifth transistor of the first conductivity type configured as a diode-connected device with a gate terminal and drain terminal coupled to bias current node.

3. The voltage generator circuit of claim 2 , wherein a source terminal of the fourth transistor is coupled to a source terminal of the fifth transistor at an intermediate node.

4. The voltage generator circuit of claim 1 , further comprising an additional transistor having a gate terminal and a drain terminal coupled to the first transistor and a source terminal coupled to a ground reference.

5. The voltage generator circuit of claim 1 , wherein a drain terminal of the second transistor is coupled to a ground reference and a drain terminal of the third transistor is coupled to a supply voltage.

6. The voltage generator circuit of claim 1 , further comprising a voltage sense circuit coupled to the voltage output and configured to generate said feedback voltage as a function of a sensed voltage at the voltage output node.

7. A device, comprising:

the voltage generator circuit of claim 1 ;

a capacitive load; and

a switching circuit configured to selectively connect the voltage output to the capacitive load.

8. The device of claim 7 , wherein selective connection by the switching circuit is driven in response to a periodic control signal.

9. The device of claim 7 , further comprising:

a fourth transistor of the second conductivity type configured as a diode-connected device with a gate terminal and drain terminal coupled to the drain terminal of the first transistor; and

a fifth transistor of the first conductivity type configured as a diode-connected device with a gate terminal and drain terminal coupled to bias current node.

10. The device of claim 9 , wherein a source terminal of the fourth transistor is coupled to a source terminal of the fifth transistor at an intermediate node.

11. The device of claim 7 , further comprising an additional transistor having a gate terminal and a drain terminal coupled to the first transistor and a source terminal coupled to a ground reference.

12. The device of claim 7 , wherein a drain terminal of the second transistor is coupled to a ground reference and a drain terminal of the third transistor is coupled to a supply voltage.

13. The device of claim 7 , further comprising a voltage sense circuit coupled to the voltage output and configured to generate said feedback voltage as a function of a sensed voltage at the voltage output node.

14. A voltage generator circuit, comprising:

a capacitive output node;

a first source-follower transistor of a first conductivity type configured to source current to the capacitive output node;

a second source-follower transistor of a second conductivity type configured to sink current from the capacitive output node;

a differential amplifier having a first input receiving a reference voltage and a second input receiving a feedback voltage derived from a voltage at the capacitive output node; and

wherein said second source-follower transistor is controlled in response to an output of the differential amplifier.

15. The circuit of claim 14 , wherein the first conductivity type is n-type and the second conductivity type is p-type.

16. The circuit of claim 14 , further comprising:

a first diode-connected transistor coupled in a current mirroring configuration with the first source-follower transistor; and

a second diode-connected transistor coupled in a current mirroring configuration with the second source-follower transistor.

17. The circuit of claim 16 , wherein said first and second diode-connected transistors have source-drain paths coupled in series.

18. The circuit of claim 17 , further comprising current source circuit configured to source current to the first diode-connected transistor.

19. The circuit of claim 17 , further comprising a transistor having a source-drain path coupled in series with the source-drain path of the second diode-connected transistor, and wherein a control terminal of said transistor is coupled to the output of the differential amplifier.

20. The circuit of claim 14 , wherein the first source-follower transistor is controlled in response to a bias current.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 18, 2024
From: STMICROELECTRONICS, INC.
To: STMICROELECTRONICS INTERNATIONAL N.V.
Reel/Frame 068433/0816 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 15, 2016
From: NALLAMOTHU, PAVAN
To: STMICROELECTRONICS, INC.
Reel/Frame 040319/0670 →
Continuity (1)
Related Publication 20180138898A1 · May 17, 2018