Light-emitting element and manufacturing method thereof
A light-emitting element includes at least a GaN substrate 11 ; a first light reflecting layer 41 formed on the GaN substrate 11 and functioning as a selective growth mask layer 44 ; a first compound semiconductor layer 21 , an active layer 23 , and a second compound semiconductor layer 22 that are formed on the first light reflecting layer; and a second electrode 32 and a second light reflecting layer 42 that are formed on the second compound semiconductor layer 22 . An off angle of the plane orientation of the surface of the GaN substrate 11 is 0.4 degrees or less, the area of the first light reflecting layer 41 is 0.8S 0 or less, where S 0 represents the area of the GaN substrate 11 , and as a bottom layer 41 A of the first light reflecting layer, a thermal expansion relaxation film 44 is formed on the GaN substrate 11.
1. A method of manufacturing a light-emitting element, the method comprising:
forming a selective growth mask layer on a GaN substrate, wherein the selective growth mask layer comprises a first light reflecting layer;
selectively growing a first compound semiconductor layer from a surface of the GaN substrate not covered with the selective growth mask layer, and covering the GaN substrate and the selective growth mask layer with the first compound semiconductor layer;
forming an active layer on the first compound semiconductor layer;
forming a second compound semiconductor layer on the active layer;
forming an electrode on the second compound semiconductor layer; and
forming a second light reflecting layer on the electrode, wherein
an off angle of plane orientation of the surface of the GaN substrate is 0.4 degrees or less,
an area of the selective growth mask layer is 0.8S 0 or less, where S 0 represents an area of the GaN substrate, and
a thermal expansion relaxation film is on the GaN substrate as a bottom layer of the selective growth mask layer.
2. The method according to claim 1 , wherein
the thermal expansion relaxation film comprises at least one type of material selected from the group consisting of silicon nitride, aluminum oxide, niobium oxide, tantalum oxide, titanium oxide, magnesium oxide, zirconium oxide, and aluminum nitride.
3. The method according to claim 1 , wherein
t 1 =λ 0 /(2 n 1 ) is satisfied,
where t 1 represents a thickness of the thermal expansion relaxation film, λ 0 represents an emission wavelength of the light-emitting element, and n 1 represents a refractive index of the thermal expansion relaxation film.
4. The method according to claim 1 , further comprising
removing the GaN substrate while using the first light reflecting layer as a stopper layer, after forming the active layer, the second compound semiconductor layer, the electrode, and the second light reflecting layer sequentially on the first compound semiconductor layer.
5. The method according to claim 1 , wherein surface roughness Ra of the second compound semiconductor layer is 1.0 nm or less.
6. The method according to claim 1 , wherein a planar shape of the selective growth mask layer is one of a regular hexagonal shape, a circular shape, a lattice shape, or a stripe shape.
7. A method of manufacturing a light-emitting element, the method comprising:
forming a selective growth mask layer on a GaN substrate, wherein the selective growth mask layer comprises a first light reflecting layer;
selectively growing a first compound semiconductor layer from a surface of the GaN substrate not covered with the selective growth mask layer, and covering the GaN substrate and the selective growth mask layer with the first compound semiconductor layer; and
sequentially forming an active layer, a second compound semiconductor layer, an electrode, and a second light reflecting layer on the first compound semiconductor layer, wherein
an off angle of plane orientation of the surface of the GaN substrate is 0.4 degrees or less,
an area of the selective growth mask layer is 0.8S 0 or less, where S 0 represents an area of the GaN substrate, and
a linear thermal expansion coefficient (CTE) of a bottom layer of the selective growth mask layer in contact with the GaN substrate satisfies:
1×10 −6 /K≤ CTE≤ 1×10 −5 /K.
8. The method according to claim 7 , wherein the bottom layer of the selective growth mask layer comprises at least one type of material selected from the group consisting of silicon nitride, aluminum oxide, niobium oxide, tantalum oxide, titanium oxide, magnesium oxide, zirconium oxide, and aluminum nitride.
9. The method according to claim 7 , wherein
t 1 =λ 0 /(2 n 1 )
is satisfied, where t 1 represents a thickness of the bottom layer of the selective growth mask layer, λ 0 represents an emission wavelength of the light-emitting element, and n 1 represents a refractive index of the bottom layer of the selective growth mask layer.
10. A light-emitting element, comprising:
a GaN substrate;
a selective growth mask layer on the GaN substrate, wherein the selective growth mask layer comprises a first light reflecting layer;
a first compound semiconductor layer on the selective growth mask layer and the GaN substrate;
an active layer on the first compound semiconductor layer;
a second compound semiconductor layer on the active layer;
an electrode on the second compound semiconductor layer; and
a second light reflecting layer on the electrode, wherein
an off angle of plane orientation of a surface of the GaN substrate is 0.4 degrees or less,
an area of the selective growth mask layer is 0.8S 0 or less, where S 0 represents an area of the GaN substrate, and
a thermal expansion relaxation film is on the GaN substrate as a bottom layer of the selective growth mask layer.
11. A light-emitting element, comprising:
a GaN substrate;
a selective growth mask layer on the GaN substrate, wherein the selective growth mask layer comprises a first light reflecting layer;
a layered structure on the selective growth mask layer, the layered structure including a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; and
an electrode and a second light reflecting layer on the second compound semiconductor layer, wherein
an off angle of plane orientation of a surface of the GaN substrate is 0.4 degrees or less,
an area of the selective growth mask layer is 0.8S 0 or less, where S 0 represents an area of the GaN substrate, and
a linear thermal expansion coefficient (CTE) of a bottom layer of selective growth mask layer in contact with the GaN substrate satisfies:
1×10 −6 /K≤ CTE≤ 1×10 −5 /K.
12. A method of manufacturing a light-emitting element, the method comprising:
forming a selective growth mask layer on a GaN substrate, wherein the selective growth mask layer comprises a first light reflecting layer;
selectively growing a first compound semiconductor layer from a surface of the GaN substrate not covered with the selective growth mask layer, and covering the GaN substrate and the selective growth mask layer with the first compound semiconductor layer;
sequentially forming an active layer, a second compound semiconductor layer, an electrode, and a second light reflecting layer on the first compound semiconductor layer; and
removing the GaN substrate while using the first light reflecting layer as a stopper layer, after forming the active layer, the second compound semiconductor layer, the electrode, and the second light reflecting layer sequentially on the first compound semiconductor layer, wherein
an off angle of plane orientation of the surface of the GaN substrate is 0.4 degrees or less,
an area of the selective growth mask layer is 0.8S 0 or less, where S 0 represents an area of the GaN substrate, and
a thermal expansion relaxation film is on the GaN substrate as a bottom layer of the selective growth mask layer.