Granted Patent B1

US 10,147,607 · App. 15/685,871 · Granted Dec 4, 2018

Abstract

Claims (19)

1. A method for semiconductor pitch patterning, comprising:

directionally forming a mask material on:

a first set of spacers formed on a substrate; and

a surface of the substrate;

selectively forming a second set of spacers on side surfaces of the first set of spacers and a portion of the surface of the substrate;

removing portions of the mask material from top portions of the first set of spacers;

wherein a top portion of each of the second set remains unetched subsequent to removing portions of the mask material from the top portions of the first set of spacers; and

applying an additional directional deposition of an additional mask material on the second set of spacers and the surface of the substrate.

2. The method of claim 1 , further comprising removing portions of the mask material from the surface of the substrate.

3. The method of claim 2 , further comprising removing the first set of spacers.

4. The method of claim 1 , wherein the first set of spacers are formed on the substrate by:

forming a photo resist material on the substrate;

forming the first set of spacers on side surfaces of the photo resist material.

5. The method of claim 4 , further comprising removing the photo resist material.

6. The method of claim 1 , further comprising directionally depositing the mask material via a gas cluster ion beam method.

7. The method of claim 1 , comprising selectively depositing a third set of spacers on side surfaces of the second set of spacers.

8. The method of claim 7 , comprising removing the additional mask material from a top of the second set of spacers and the surface of the substrate.

9. The method of claim 8 , comprising removing the second set of spacers.

10. The method of claim 9 , wherein a quantity of the third set of spacers is four times a quantity of the first set of spacers.

Assignments (7)