Lead frame surface modifications for high voltage isolation
An integrated circuit (IC) includes a lead frame that has a set of leads coupled to a corresponding set of pins. A semiconductor die with contacts is coupled to the set of leads. Encapsulating material encloses the semiconductor die, such that the set of pins extend beyond the encapsulating material. An additive coating covers one or more of the plurality of pins.
1. A package comprising:
a semiconductor die including contacts;
at least first and second leads attached to respective ones of the contacts;
encapsulating material enclosing the semiconductor die, such that: at least a portion of the first lead extends beyond the encapsulating material; and at least a portion of the second lead extends beyond the encapsulating material; and
an additive insulating coating covering every portion of the first lead that extends beyond the encapsulating material.
2. The package of claim 1 , wherein the additive insulating coating covers every portion of the second lead that extends beyond the encapsulating material.
3. The package of claim 1 , wherein the additive insulating coating is selected from a group consisting of: epoxy, polyimide, Bismaleimide, and PBO.
4. The package of claim 1 , wherein the leads are trimmed to form stubs, and wherein the stubs are covered by the additive insulating coating.
5. The package of claim 1 , wherein the semiconductor die is mounted on a substrate.
6. A method of forming a package, the method comprising:
forming at least first and second leads attached to respective ones of contacts of a semiconductor die;
encapsulating the semiconductor die with encapsulation material, such that: at least a portion of the first lead extends beyond the encapsulating material; and at least a portion of the second lead extends beyond the encapsulating material; and
adding an insulating coating to cover every portion of the first lead that extends beyond the encapsulating material.
7. The method of claim 6 , wherein the insulating coating covers every portion of the second lead that extends beyond the encapsulating material.
8. The method of claim 6 , wherein the insulating coating is selected from a group consisting of: epoxy, polyimide, Bismaleimide, and PBO.
9. The method of claim 6 , wherein adding the insulating coating is performed after encapsulating the semiconductor die.
10. The method of claim 6 , wherein adding the insulating coating is performed before encapsulating the semiconductor die.
11. The method of claim 6 , wherein adding the insulating coating is performed before attaching the leads to corresponding ones of the contacts.
12. The method of claim 6 , wherein adding the insulating coating is performed by an inkjet process.
13. The method of claim 6 , wherein adding the insulating coating is performed by an electrostatic process.
14. The method of claim 6 , wherein adding the insulating coating is performed by a silk screen process.
15. The method of claim 6 , further including:
trimming the leads to form stubs, wherein the insulating coating covers the stubs.
16. The package of claim 1 , wherein the additive insulating coating covers less than every portion of the second lead that extends beyond the encapsulating material.
17. The method of claim 6 , wherein the insulating coating covers less than every portion of the second lead that extends beyond the encapsulating material.