Method and apparatus for depositing cobalt in a feature
Methods and apparatus for depositing a cobalt layer in a feature, such as, a word line formed in a substrate, are provided herein. In some embodiments, method of processing a substrate includes: exposing a substrate at a first temperature to a cobalt containing precursor to deposit a cobalt layer within a word line feature formed in the substrate, wherein the word line feature is part of a 3D NAND device; and annealing the substrate to remove contaminants from the cobalt layer and to reflow the cobalt layer into the word line feature, wherein the substrate is at a second temperature greater than the first temperature during the annealing.
1. A substrate processing chamber, comprising:
a chamber body having a processing volume;
a substrate support disposed within the chamber body and having a support surface to support a substrate;
a showerhead disposed opposite the substrate support configured to expose the substrate to a cobalt containing precursor;
a heat source disposed within the substrate support configured to heat the substrate to a predetermined temperature;
a first ampoule containing a cobalt precursor and coupled to the substrate processing chamber; and
a second ampoule containing the cobalt precursor and coupled to the substrate processing chamber;
further comprising:
an inlet manifold coupled to the first ampoules and the second ampoule;
an outlet manifold coupled to a lid of the substrate processing chamber; and
a gas feedthrough coupled to the inlet manifold at a first end and the outlet manifold at a second end opposite the first end;
wherein the gas feedthrough further comprises a first channel and a second channel fluidly coupled to a first outlet and a second outlet, respectively, of the inlet manifold.
2. The substrate processing chamber of claim 1 , wherein the first and second channels are respectively fluidly coupled to a first inlet and a second inlet of the outlet manifold.
3. The substrate processing chamber of claim 2 , wherein the second channel has a diameter larger than that of the first channel to accommodate an increased amount of precursor gas flowing from the first and second ampoules.
4. The substrate processing chamber of claim 3 , wherein the diameter of the second channel is between about 0.25 inches and about 0.4 inches.
5. The substrate processing chamber of claim 3 , wherein the diameter of the second channel is about 0.29 inches.