Semiconductor device
A semiconductor device has a semiconductor substrate including a first conductivity-type drift layer, a second conductivity-type base layer disposed in a surface layer portion of the drift layer, and a second conductivity-type collector layer and a first conductivity-type cathode layer disposed opposite to the base layer with respect to the drift layer. In the semiconductor substrate, an IGBT region and a diode region are alternately and repetitively arranged. The IGBT region and the diode region are divided by a boundary between the collector layer and the cathode layer. The collector layer is defined as a first collector layer. The semiconductor device includes a second collector layer having a second conductivity-type impurity concentration higher than that of the first collector layer, at a surface of the semiconductor substrate adjacent to the first collector layer and the cathode layer.
1. A semiconductor device comprising
a semiconductor substrate including:
a first conductivity-type drift layer;
a second conductivity-type base layer disposed in a surface layer portion of the drift layer; and
a second conductivity-type collector layer and a first conductivity-type cathode layer disposed opposite to the base layer with respect to the drift layer, wherein
in the semiconductor substrate, a region operating as an IGBT element is referred to as an IGBT region, and a region operating as a diode element is referred to as a diode region, and the IGBT region and the diode region are alternately and repetitively arranged,
the IGBT region and the diode region are divided from each other by a boundary between the collector layer and the cathode layer,
the collector layer and the cathode layer extend in a direction along a surface of the semiconductor substrate, and the collector layer and the cathode layer are alternately and repetitively arranged in a direction orthogonal to the direction in which the collector layer and the cathode layer extend,
the collector layer is referred to as a first collector layer,
the semiconductor substrate further includes a second collector layer having a second conductivity-type impurity concentration higher than that of the first collector layer, at the surface of the semiconductor substrate along which the first collector layer and the cathode layer are disposed, and
the second collector layer is disposed between the first collector layer and the cathode layer, the second collector layer is located only at a position corresponding to a boundary between the IGBT region and the diode region, and the second collector layer is in contact with the cathode layer.
2. The semiconductor device according to claim 1 , wherein
the second conductivity-type impurity concentration of the second collector layer is twice or more of a second conductivity-type impurity concentration of the first collector layer.
3. The semiconductor device according to claim 1 , wherein
the semiconductor substrate further includes a damage layer to allow excess carriers generated in the drift layer to recombine and disappear, and
the damage layer is disposed in the drift layer of the diode region and extends over the boundary between the IGBT region and the diode region into a region of the drift layer of the IGBT region adjacent to the boundary between the IGBT region and the diode region.
4. A semiconductor device comprising
a semiconductor substrate including:
a first conductivity-type drift layer;
a second conductivity-type base layer disposed in a surface layer portion of the drift layer;
a field stop layer disposed opposite to the base layer with respect to the drift layer, the field stop layer having a first conductivity-type impurity concentration higher than that of the drift layer; and
a second conductivity-type collector layer and a first conductivity-type cathode layer disposed opposite to the drift layer with respect to the field stop layer,
wherein,
in the semiconductor substrate, a region operating as an IGBT element is referred to as an IGBT region, and a region operating as a diode element is referred to as a diode region, and the IGBT region and the diode region are alternately and repetitively arranged,
the IGBT region and the diode region are divided from each other by a boundary between the collector layer and the cathode layer,
the semiconductor substrate further includes a low concentration field stop layer in the field stop layer, the low concentration field stop layer is located at only a position in the field stop layer corresponding to a boundary between the collector layer and the cathode layer, the low concentration field stop layer being in contact with the collector layer, the cathode layer and the drift layer, and the low concentration field stop layer having a first conductivity-type impurity concentration lower than that of portions of the field stop layer in the IGBT region and in the diode region other than the low concentration field stop layer.
5. The semiconductor device according to claim 4 , wherein
the semiconductor substrate further includes a damage layer to allow excess carriers generated in the drift layer to recombine and disappear, and
the damage layer is disposed in the drift layer of the diode region and extends over the boundary between the IGBT region and the diode region into a region of the drift layer of the IGBT region adjacent to the boundary between the IGBT region and the diode region.
6. A semiconductor device comprising
a semiconductor substrate including:
a first conductivity-type drift layer;
a second conductivity-type base layer disposed in a surface layer portion of the drift layer; and
a second conductivity-type collector layer and a first conductivity-type cathode layer disposed opposite to the base layer with respect to the drift layer, wherein
in the semiconductor substrate, a region operating as an IGBT element is referred to as an IGBT region, and a region operating as a diode element is referred to as a diode region, and the IGBT region and the diode region are alternately and repetitively arranged,
the IGBT region and the diode region are divided from each other by a boundary between the collector layer and the cathode layer,
the semiconductor substrate is formed with a groove on a surface of the semiconductor substrate adjacent to the collector layer and the cathode, the groove is located at only a position between the collector layer and the cathode layer corresponding to a boundary between the IGBT region and the diode region, the groove being deeper than the collector layer and the cathode layer, and
the semiconductor substrate includes an insulation layer disposed in the groove.
7. The semiconductor device according to claim 6 , wherein
the semiconductor substrate further includes a damage layer to allow excess carriers generated in the drift layer to recombine and disappear, and
the damage layer is disposed in the drift layer of the diode region and extends over the boundary between the IGBT region and the diode region into a region of the drift layer of the IGBT region adjacent to the boundary between the IGBT region and the diode region.