Charged particle induced deposition of boron containing material
View Patent ↗A method for produce a boron containing film by admitting a gaseous boron precursor into a vacuum chamber containing a substrate and directing an electron beam or ion beam into the vacuum chamber onto to the surface of the substrate. The electron beam or ion beam dissociates the gaseous boron precursor at the surface of the substrate creating non-volatile fragments that bind to the substrate surface forming a boron containing film.
1. A method of producing a boron film, comprising the steps of:
admitting a gaseous boron precursor into a vacuum chamber containing a substrate with a substrate surface wherein said gaseous boron precursor absorbs to said substrate surface, and
directing an ion beam or an electron beam to said substrate surface wherein said step of directing an ion beam or an electron beam to said substrate surface comprises using a scanning electron microscope for directing an ion beam or an electron beam to said substrate surface and comprising the steps of:
admitting a gaseous boron precursor into a vacuum chamber containing a substrate with a substrate surface wherein said gaseous boron precursor absorbs to said substrate surface, and
directing an ion beam or an electron beam to said substrate surface.
2. A method of producing a boron film, comprising the steps of:
admitting a gaseous boron precursor into a vacuum chamber containing a substrate with a substrate surface wherein said gaseous boron precursor absorbs to said substrate surface, and
directing an ion beam or an electron beam to said substrate surface wherein said step of directing an ion beam or an electron beam to said substrate surface comprises using an ion beam microscope for directing an ion beam to said substrate surface and wherein said ion beam or electron beam dissociates said gaseous boron precursor creating non-volatile fragments that bind to said substrate surface forming a boron containing film.
3. A method of producing a boron film, comprising the steps of:
admitting a gaseous boron precursor into a vacuum chamber containing a substrate with a substrate surface wherein said gaseous boron precursor absorbs to said substrate surface, and
directing an ion beam or an electron beam to said substrate surface wherein said ion beam or electron beam dissociates said gaseous boron precursor creating non-volatile fragments that bind to said substrate surface forming a boron containing film and wherein said step of directing an ion beam or an electron beam to said substrate surface comprises using an electron flood gun for directing an electron beam to said substrate surface.
4. A method of producing a boron film, comprising the steps of:
delivering a gaseous boron precursor to a substrate in a vacuum chamber thereby provide an interface of said gaseous boron precursor and said substrate in said vacuum chamber,
directing focused charged particles to said interface of said gaseous boron precursor and said substrate, wherein said step of directing focused charged particles to said interface of said gaseous boron precursor and said substrate comprises directing focused electrons to said interface of said gaseous boron precursor and said substrate, and
moving said focused charged particles relative to said substrate to produce the boron film.
5. A method of producing a boron film, comprising the steps of:
delivering a gaseous boron precursor to a substrate in a vacuum chamber thereby provide an interface of said gaseous boron precursor and said substrate in said vacuum chamber,
directing focused charged particles to said interface of said gaseous boron precursor and said substrate, wherein said step of directing focused charged particles to said interface of said gaseous boron precursor and said substrate comprises using a scanning electron microscope for directing focused electrons to the said interface of said gaseous boron precursor and said substrate, and
moving said focused charged particles relative to said substrate to produce the boron film.
6. A method of producing a boron film, comprising the steps of:
delivering a gaseous boron precursor to a substrate in a vacuum chamber thereby provide an interface of said gaseous boron precursor and said substrate in said vacuum chamber,
directing focused charged particles to said interface of said gaseous boron precursor and said substrate, wherein said step of directing focused charged particles to said interface of said gaseous boron precursor and said substrate comprises using an electron flood gun for directing focused electrons to the said interface of said gaseous boron precursor and said substrate, and
moving said focused charged particles relative to said substrate to produce the boron film.
7. A method of producing a boron film, comprising the steps of:
providing a gaseous boron precursor;
providing a vacuum chamber;
directing a beam of electrons or a beam of ions into said vacuum chamber;
providing a substrate, wherein said substrate has a substrate surface;
positioning said substrate in said vacuum chamber;
admitting said gaseous boron precursor into said vacuum chamber; and
directing said beam of electrons or beam of ions in said vacuum chamber onto said gaseous boron precursor and onto said substrate surface wherein said gaseous boron precursor absorbs to said substrate surface and wherein said electron beam dissociates said gaseous boron precursor creating non-volatile fragments that bind to said substrate surface forming a boron film and wherein said steps of directing a beam of electrons or a beam of ions into said vacuum chamber and directing said beam of electrons or beam of ions in said vacuum chamber onto said gaseous boron precursor and onto said substrate surface comprises using a scanning electron microscope for directing a beam of electrons into said vacuum chamber and directing said beam of electrons in said vacuum chamber onto said gaseous boron precursor and onto said substrate surface.
8. A method of producing a boron film, comprising the steps of:
providing a gaseous boron precursor;
providing a vacuum chamber;
directing a beam of electrons or a beam of ions into said vacuum chamber;
providing a substrate, wherein said substrate has a substrate surface;
positioning said substrate in said vacuum chamber;
admitting said gaseous boron precursor into said vacuum chamber; and
directing said beam of electrons or beam of ions in said vacuum chamber onto said gaseous boron precursor and onto said substrate surface wherein said gaseous boron precursor absorbs to said substrate surface and wherein said electron beam dissociates said gaseous boron precursor creating non-volatile fragments that bind to said substrate surface forming a boron film and wherein said steps of directing a beam of electrons or a beam of ions into said vacuum chamber and directing said beam of electrons or beam of ions in said vacuum chamber onto said gaseous boron precursor and onto said substrate surface comprises using an electron flood gun for directing a beam of electrons into said vacuum chamber and directing said beam of electrons in said vacuum chamber onto said gaseous boron precursor and onto said substrate surface.