IP Library Granted Patent US 10,180,692
Granted Patent B2
US 10,180,692 · App. 14/833,712 · Granted Jan 15, 2019

Semiconductor device

Inventor: Toshiyuki Kouchi (Kawasaki, JP)
Assignee: TOSHIBA MEMORY CORPORATION
G05F1/46H01L25/0657H01L24/05H01L24/06H01L24/13H01L24/16H01L24/17H01L2224/05009H01L2224/06181H01L2224/13025H01L2224/16145H01L2224/16146H01L2224/17181H01L2225/06513H01L2225/06541H01L2225/06565
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Quick Facts
Patent No.
US 10,180,692
App. No.
14/833,712
Granted
Jan 15, 2019
Kind
B2
Abstract

A semiconductor device of one embodiment includes semiconductor chips. While the semiconductor device is receiving a power supply and a chip enable signal which is negated, all external terminals of the semiconductor chips are at the same logic level.

Claims (75)

1. A semiconductor device comprising:

semiconductor chips, each of which comprises:

a plurality of first external terminals at a first side of a corresponding semiconductor chip of the semiconductor chips;

a plurality of second external terminals at a second side of the corresponding semiconductor chip, the second side being opposite to the first side;

a plurality of through vias inside the corresponding semiconductor chip, the through vias connected to the second external terminals at one ends, respectively, and extending toward the first external terminals;

a logic circuit inside the corresponding semiconductor chip, the logic circuit connecting other ends of the through vias and the first external terminals, respectively, such that each of signal lines between the through vias and the first external terminals includes at least one inverter circuit; and

a latch circuit inside the corresponding semiconductor chip, the latch circuit configured to latch data of the signal lines between the through vias and the first external terminals, wherein

upon power-on of the semiconductor device, signals are propagated from the first external terminals of an uppermost semiconductor chip to the second external terminals of a lowermost semiconductor chip through the logic circuits of all the semiconductor chips, without any external input to the signal lines, and

after the signals have been propagated so that the latch circuits of all the semiconductor chips latch data of the respective signal line, and the logic circuits of all the semiconductor chips are inactivated, while the semiconductor device is receiving a power supply and the semiconductor chips are receiving from outside the semiconductor chips a chip enable signal which is negated, all external terminals of the semiconductor chips are at the same logic level.

2. The device of claim 1 , wherein:

the latch circuit of a first semiconductor chip of the semiconductor chips stores the same logic level as a logic level at one of the first external terminals of the first semiconductor chip.

3. The device of claim 2 , wherein:

the first semiconductor chip further comprises:

a second terminal of all the external terminals,

the logic circuit of the first semiconductor chip generates a logic level of inversion of the logic level at the one of the first external terminals of the first semiconductor chip at one of the second external terminals of the first semiconductor chip; and

the first semiconductor chip further comprises a controller which disables the logic circuit of the first semiconductor chip after the latch circuit of the first semiconductor chip starts the storing of the same logic level as the logic level at the one of the first external terminals.

4. The device of claim 3 , wherein:

the same logic level at all of the first and second external terminals of the semiconductor chips is a low level.

5. The device of claim 1 , wherein:

the logic circuit of a first semiconductor chip of the semiconductor chips generates the same logic level as a logic level at one of the first external terminals of the first semiconductor chip at one of the second external terminals of the first semiconductor chip.

6. The device of claim 1 , wherein:

the first external terminals of each of a subset of the semiconductor chips excluding the uppermost semiconductor chip and the lowermost semiconductor chip are coupled to the second external terminals of another of the subset of the semiconductor chips on a one-to-one basis.

7. The device of claim 6 , wherein:

the latch circuit of each of the semiconductor chips stores the same logic level as a logic level at one of the first external terminals of that semiconductor chip.

8. The device of claim 7 , wherein:

the logic circuit of each of the semiconductor chips generates a logic level of inversion of the logic level at the one of the first external terminals of that semiconductor chip at one of the second external terminals of that semiconductor chip; and

each of the semiconductor chips further comprises a controller which disables the logic circuit of the corresponding semiconductor chip after the latch circuit of the corresponding semiconductor chip starts the storing of the same logic level as the logic level at the one of the first external terminals of the corresponding semiconductor chip.

9. The device of claim 3 , wherein:

the same logic level at all of the first and second external terminals of the semiconductor chips is a low level.

10. A semiconductor device comprising:

semiconductor chips, each of which comprises:

a plurality of first external terminals at a first side of a corresponding semiconductor chip of corresponding semiconductor chips;

a plurality of second external terminals at a second side of the corresponding semiconductor chip, the second side being opposite to the first side;

a plurality of through vias inside the corresponding semiconductor chip, the through vias connected to the second external terminals at one ends, respectively, and extending toward the first external terminals; and

a logic circuit inside the corresponding semiconductor chip, the logic circuit connecting other ends of the through vias and the first external terminals, respectively, such that each of signal lines between the through vias and the first external terminals includes at least one inverter circuit, the logic circuit generating a logic level of inversion of a logic level at one of the first external terminals at one of the second external terminals; and

a latch circuit inside the corresponding semiconductor chip, the latch circuit configured to latch data of the signal lines between the through vias and the first external terminals, wherein

upon power-on of the semiconductor device, signals are propagated from the first external terminals of an uppermost semiconductor chip to the second external terminals of a lowermost semiconductor chip through the logic circuits of all the semiconductor chips, without any external input to the signal lines, and

after the signals have been propagated so that the latch circuits of all the semiconductor chips latch data of the respective signal line, and the logic circuits of all the semiconductor chips are inactivated, while the semiconductor device is receiving a power supply and the semiconductor chips are receiving from outside the semiconductor chips a chip enable signal which is negated, all of the first and second external terminals of the semiconductor chips are at the same logic level.

11. The device of claim 10 , wherein:

the latch circuit of a first semiconductor chip of the semiconductor chips stores the same logic level as a logic level at one of the first external terminals of the first semiconductor chip.

12. The device of claim 11 , wherein:

the first semiconductor chip further comprises a controller which disables the logic circuit of the first semiconductor chip after the latch of the first semiconductor chip starts the storing of the same logic level as the logic level at the one of the first external terminals.

13. The device of claim 12 , wherein

the same logic level at all of the first and second external terminals of the semiconductor chips is a low level.

14. The device of claim 10 , wherein

the logic circuit of a first semiconductor chip of the semiconductor chips generates the same logic level as a logic level at one of the first external terminals of the first semiconductor chip at one of the second external terminals of the first semiconductor chip.

15. The device of claim 10 , wherein

the first external terminals of each of a subset of the semiconductor chips excluding the uppermost semiconductor chip and the lowermost semiconductor chip are coupled to the second external terminals of another of the subset of the semiconductor chips on a one-to-one basis.

16. The device of claim 15 , wherein:

the latch circuit of each of the semiconductor chips stores the same logic level as a logic level at one of the first external terminals of that semiconductor chip.

17. The device of claim 16 , wherein

the logic circuit of each of the semiconductor chips generates a logic level of inversion of the logic level at the one of the first external terminals of that semiconductor chip at one of the second external terminals of that semiconductor chip; and

each of the semiconductor chips further comprises a controller which disables the logic circuit of the corresponding semiconductor chip after the latch of the corresponding semiconductor chip starts the storing of the same logic level as the logic level at the one of the first external terminals of the corresponding semiconductor chip.

18. The device of claim 17 , wherein:

the same logic level at all of the first and second external terminals of the semiconductor chips is a low level.

19. A semiconductor device comprising:

semiconductor chips, each of which comprises:

a plurality of first external terminals at a first side of a corresponding semiconductor chip of the semiconductor chips;

a plurality of second external terminals at a second side of the corresponding semiconductor chip, the second side being opposite to the first side;

a plurality of through vias inside the corresponding semiconductor chip, the through vias connected to the second external terminals at one ends, respectively, and extending toward the first external terminals;

a logic circuit inside the corresponding semiconductor chip, the logic circuit connecting other ends of the through vias and the first external terminals, respectively, such that each of signal lines between the through vias and the first external terminals includes at least one inverter circuit, the logic circuit generating a logic level of inversion of the logic level at one of the first external terminals at one of the second external terminals;

a latch circuit inside the corresponding semiconductor chip, the latch circuit configured to latch data of the signal lines between the through vias and the first external terminals, the latch starting a process to store the same logic level as the logic level at the one of the first external terminals upon the semiconductor device starting to receive a power supply; and

a controller which disables the logic circuit of the corresponding semiconductor device after the latch circuit of the corresponding semiconductor chip starts the storing of the same logic level as the logic level at the one of the first external terminals of the corresponding semiconductor chip, wherein

upon power-on of the semiconductor device, signals are propagated from the first external terminals of an uppermost semiconductor chip to the second external terminals of a lowermost semiconductor chip through the logic circuits of all the semiconductor chips, without any external input to the signal lines, and

after the signals have been propagated so that the latch circuits of all the semiconductor chips latch data of the respective signal line, and the logic circuits of all the semiconductor chips are inactivated, while the semiconductor device is receiving a power supply and the semiconductor chips are receiving from outside the semiconductor chips a chip enable signal which is negated, all of the first and second external terminals of the semiconductor chips are at the same logic level.

20. A semiconductor device comprising:

semiconductor chips, each of which comprises:

a plurality of first external terminals at a first side of a corresponding semiconductor chip of the semiconductor chips;

a plurality of second external terminals at a second side of the corresponding semiconductor chip, the second side being opposite to the first side;

a plurality of through vias inside the corresponding semiconductor chip, the through vias connected to the second external terminals at one ends, respectively, and extending toward the first external terminals;

a logic circuit inside the corresponding semiconductor chip, the logic circuit connecting other ends of the through vias and the first external terminals, respectively, such that each of signal lines between the through vias and the first external terminals includes at least one inverter circuit; and

a latch circuit inside the corresponding semiconductor chip, the latch circuit configured to latch data of the signal lines between the through vias and the first external terminals, wherein

the semiconductor chips are stacked and coupled through the first and second external terminals,

upon power-on of the semiconductor device, signals are propagated from the first external terminals of an uppermost semiconductor chip to the second external terminals of a lowermost semiconductor chip through the logic circuits of all the semiconductor chips, without any external input to the signal lines, and

after the signals have been propagated so that the latch circuits of all the semiconductor chips latch data of the respective signal line, and the logic circuits of all the semiconductor chips are inactivated, while the semiconductor device is receiving a power supply and the semiconductor chips are receiving from outside the semiconductor chips a chip enable signal which is negated, all of the first and second external terminals of the semiconductor chips are at the same logic level.

Assignments (5)
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043328/0388 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 24, 2015
From: KOUCHI, TOSHIYUKI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 036403/0127 →
Continuity (2)
Provisional Application 62128034 · Mar 4, 2015
Related Publication 20160259352A1 · Sep 8, 2016
Cited By (5)
US 12,218,059 US 12,248,869 US 12,293,993 US 12,362,182 US 12,401,010